JPH06120192A - Both side scrubbing washing device - Google Patents
Both side scrubbing washing deviceInfo
- Publication number
- JPH06120192A JPH06120192A JP28926192A JP28926192A JPH06120192A JP H06120192 A JPH06120192 A JP H06120192A JP 28926192 A JP28926192 A JP 28926192A JP 28926192 A JP28926192 A JP 28926192A JP H06120192 A JPH06120192 A JP H06120192A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- cleaning
- water
- jet
- brush
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005406 washing Methods 0.000 title abstract 4
- 238000005201 scrubbing Methods 0.000 title description 6
- 239000004065 semiconductor Substances 0.000 claims abstract description 29
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 28
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000004140 cleaning Methods 0.000 claims description 40
- 230000007261 regionalization Effects 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 2
- 238000007664 blowing Methods 0.000 abstract 1
- 239000011146 organic particle Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Cleaning In General (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体ウエハの両面を
ブラシ洗浄とジェット洗浄との組み合わせにより同時洗
浄する両面スクラブ洗浄装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a double-sided scrubbing cleaning apparatus for simultaneously cleaning both sides of a semiconductor wafer by a combination of brush cleaning and jet cleaning.
【０００２】[0002]
【従来の技術】ブラシ洗浄とジェット洗浄とを組み合わ
せた両面スクラブ洗浄は、いずれか一方の洗浄に比して
パーティクル除去効果が高く、例えば特開昭６２−２５
９４４７号公報および特公昭６４−６８９３４号公報等
に開示された装置に採用されている。2. Description of the Related Art Double-sided scrub cleaning, which is a combination of brush cleaning and jet cleaning, has a higher effect of removing particles than either one of the cleaning methods.
It is used in the devices disclosed in Japanese Patent No. 9447 and Japanese Patent Publication No. 64-68934.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、半導体
ウエハの表面にパターン模様が形成されると、その表面
に対してはブラシ洗浄を適用できない。そのため、従来
のこの種両面洗浄装置は、パターン形成前の半導体ウエ
ハにしか適用できなかった。However, when a pattern is formed on the surface of the semiconductor wafer, brush cleaning cannot be applied to the surface. Therefore, the conventional double-sided cleaning device of this type can be applied only to a semiconductor wafer before pattern formation.
【０００４】また、従来のジェット洗浄では洗浄液とし
て純水を使用するため、有機物系のパーティクルは充分
に除去できなかった。Further, in the conventional jet cleaning, since pure water is used as the cleaning liquid, organic particles cannot be sufficiently removed.
【０００５】本発明の目的は、パターン形成前の半導体
ウエハだけでなくパターン形成後の半導体ウエハに適用
でき、しかも、有機物系のパーティクルをも充分に除去
できる両面スクラブ洗浄装置を提供することにある。An object of the present invention is to provide a double-sided scrubbing apparatus which can be applied not only to a semiconductor wafer before pattern formation but also to a semiconductor wafer after pattern formation and which can sufficiently remove organic particles. .
【０００６】[0006]
【課題を解決するための手段】本発明の両面スクラブ洗
浄装置は、洗浄すべき半導体ウエハの表面および裏面を
オゾン水またはＨ2 Ｏ2 水によりジエット洗浄する一対
の高圧ジェットノズルを設けると共に、その表面および
裏面を拭払する一対の回転ブラシを設け、一対の回転ブ
ラシのうちの少なくとも表面用の回転ブラシをウエハ表
面から離反可能としたことを特徴とする。A double-sided scrub cleaning apparatus of the present invention is provided with a pair of high pressure jet nozzles for jet cleaning the front and back surfaces of a semiconductor wafer to be cleaned with ozone water or H 2 O 2 water. A pair of rotary brushes for wiping the front surface and the back surface are provided, and at least the front surface rotary brush of the pair of rotary brushes can be separated from the wafer surface.
【０００７】ジェット洗浄においては、その洗浄水にＣ
Ｏ2 ガスを吹き込むのが良い。In the jet cleaning, the cleaning water contains C
It is better to blow O 2 gas.
【０００８】[0008]
【作用】半導体ウエハがパターン形成前の場合、鏡面仕
上げされた表面および裏面をブラシ洗浄とジェット洗浄
との組み合わせで洗浄する。半導体ウエハがパターン形
成後の場合、パターンの形成されたウエハ表面に対して
は、ジェット洗浄のみで洗浄を行い、鏡面仕上げのまま
の裏面に対しては、ブラシ洗浄とジェット洗浄との組み
合わせで洗浄を行う。そして、ジェット洗浄における洗
浄水としてオゾン水またはＨ2 Ｏ2 水が使用されている
ので、有機物系のパーティクルをも充分に除去できる。When the semiconductor wafer is not yet formed with a pattern, the mirror-finished front and back surfaces are cleaned by a combination of brush cleaning and jet cleaning. When the semiconductor wafer has been patterned, the surface of the patterned wafer is cleaned only by jet cleaning, and the back surface, which is mirror finished, is cleaned by a combination of brush cleaning and jet cleaning. I do. Since ozone water or H 2 O 2 water is used as the cleaning water in the jet cleaning, it is possible to sufficiently remove the organic particles.
【０００９】洗浄水にＣＯ2 ガスを吹き込んだ場合は、
ブラシ洗浄によって半導体ウエハに生じる静電気を少な
くできる。When CO 2 gas is blown into the wash water,
The brush cleaning can reduce static electricity generated on the semiconductor wafer.
【００１０】[0010]
【実施例】以下に本発明の実施例を図面に基づいて説明
する。図１は本発明の一実施例を示す両面スクラブ洗浄
装置の概略構成図である。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic configuration diagram of a double-sided scrubbing cleaning apparatus showing an embodiment of the present invention.
【００１１】本両面スクラブ洗浄装置は、水平に支持さ
れた半導体ウエハ１の表面および裏面を同時に洗浄す
る。ウエハ支持位置の上下には、高圧ジェットノズル２
ａ，２ｂがそれぞれ設けられている。また、回転ブラシ
３ａ，３ｂがそれぞれ設けられている。半導体ウエハ１
は支持位置で回転する。The double-sided scrubbing cleaning apparatus simultaneously cleans the front surface and the back surface of the horizontally supported semiconductor wafer 1. A high pressure jet nozzle 2 is provided above and below the wafer supporting position.
a and 2b are provided respectively. Further, rotating brushes 3a and 3b are provided respectively. Semiconductor wafer 1
Rotates in the support position.
【００１２】高圧ジェットノズル２ａ，２ｂは、純水に
オゾンが溶解したオゾン水または純水にＨ2 Ｏ2 が溶解
したＨ2 Ｏ2 水を、回転する半導体ウエハ１の表面およ
び裏面に水平方向に移動しながら吹き付ける。オゾン水
またはＨ2 Ｏ2 水にはＣＯ2ガスを吹き込む。一方、回
転ブラシ３ａ，３ｂは半導体ウエハ１の表面および裏面
を拭払し、表面を拭払する回転ブラシ３ａは、半導体ウ
エハ１から離れた位置に退避できる。[0012] high-pressure jet nozzle 2a, 2b is pure water to H 2 O 2 water H 2 O 2 is dissolved in the ozone water or pure water ozone is dissolved, horizontal to the surface and the back surface of the semiconductor wafer 1 rotating Spray while moving to. CO 2 gas is blown into ozone water or H 2 O 2 water. On the other hand, the rotary brushes 3 a and 3 b wipe the front surface and the back surface of the semiconductor wafer 1, and the rotary brush 3 a which wipes the front surface can be retracted to a position away from the semiconductor wafer 1.
【００１３】半導体ウエハがパターン形成前の場合は、
その表面および裏面に回転ブラシ３ａ，３ｂを接触さ
せ、この状態で半導体ウエハ１の表面および裏面に、５
０〜１５０ｋｇ／ｃｍ2 の高圧のオゾン水またはＨ2 Ｏ
2 水を吹き付けながら回転ブラシ３ａ，３ｂを回転させ
る。これにより、半導体ウエハ１の表面裏面ともジェッ
ト洗浄とブラシ洗浄との組み合わせで同時洗浄される。When the semiconductor wafer is not yet formed with a pattern,
The rotating brushes 3a and 3b are brought into contact with the front surface and the back surface of the semiconductor wafer 1 and the front surface and the back surface of the semiconductor wafer 1
High pressure ozone water of 0 to 150 kg / cm 2 or H 2 O
2 Rotate the rotating brushes 3a and 3b while spraying water. As a result, the front surface and the back surface of the semiconductor wafer 1 are simultaneously cleaned by a combination of jet cleaning and brush cleaning.
【００１４】半導体ウエハ１がパターン形成後の場合
は、パターンの形成された表面から回転ブラシ３ａを離
し、鏡面仕上げのままの裏面に回転ブラシ３ｂを接触さ
せる。そして、この状態で半導体ウエハ１の表面および
裏面に、５０〜１５０ｋｇ／ｃｍ2 の高圧のオゾン水ま
たはＨ2 Ｏ2 水を吹き付けながら回転ブラシ３ｂを回転
させる。これにより半導体ウエハ１の表面はジェット洗
浄で洗浄され、裏面はジェット洗浄とブラシ洗浄との組
み合わせで洗浄される。When the semiconductor wafer 1 has been subjected to pattern formation, the rotary brush 3a is separated from the surface on which the pattern is formed, and the rotary brush 3b is brought into contact with the rear surface which is mirror finished. Then, in this state, the rotary brush 3b is rotated while spraying high-pressure ozone water or H 2 O 2 water of 50 to 150 kg / cm 2 on the front surface and the back surface of the semiconductor wafer 1. As a result, the front surface of the semiconductor wafer 1 is cleaned by jet cleaning, and the back surface is cleaned by a combination of jet cleaning and brush cleaning.
【００１５】いずれの洗浄の場合も、ジェット洗浄では
高圧のオゾン水またはＨ2 Ｏ2 水が使用されるので、有
機物系のパーティクルも充分に除去される。In either case of cleaning, high-pressure ozone water or H 2 O 2 water is used in jet cleaning, so that organic particles can be sufficiently removed.
【００１６】[0016]
【発明の効果】以上の説明から明らかなように、本発明
の両面スクラブ洗浄装置は、半導体ウエハの表面を拭払
する回転ブラシをその表面から離反可能としているの
で、パターン形成前の半導体ウエハだけでなく、表面に
パターンが形成された後の半導体ウエハに対しても両面
洗浄を行うことができる。また、ジェット洗浄における
洗浄液として高圧のオゾン水またはＨ2 Ｏ2 水を使用す
るので、これまで除去が難しかった有機物系のパーティ
クルも充分に除去できる。As is apparent from the above description, the double-sided scrubbing cleaning apparatus of the present invention allows the rotating brush for wiping the surface of the semiconductor wafer to be separated from the surface, so that only the semiconductor wafer before pattern formation Alternatively, double-sided cleaning can be performed on the semiconductor wafer after the pattern is formed on the surface. Further, since high-pressure ozone water or H 2 O 2 water is used as the cleaning liquid in the jet cleaning, it is possible to sufficiently remove the organic-based particles that have been difficult to remove up to now.
【図１】本発明の一実施例を示す両面スクラブ洗浄装置
の概略構成図である。FIG. 1 is a schematic configuration diagram of a double-sided scrub cleaning device showing an embodiment of the present invention.
１ 半導体ウエハ ２ａ，２ｂ 高圧ジェットノズル ３ａ，３ｂ 回転ブラシ 1 Semiconductor Wafer 2a, 2b High Pressure Jet Nozzle 3a, 3b Rotating Brush
Claims (1)
面をオゾン水またはＨ2 Ｏ2 水によりジエット洗浄する
一対の高圧ジェットノズルを設けると共に、その表面お
よび裏面を拭払する一対の回転ブラシを設け、一対の回
転ブラシのうちの少なくとも表面用の回転ブラシをウエ
ハ表面から離反可能としたことを特徴とする両面スクラ
ブ洗浄装置。1. A pair of high-pressure jet nozzles for jet cleaning the front and back surfaces of a semiconductor wafer to be cleaned with ozone water or H 2 O 2 water, and a pair of rotating brushes for wiping the front and back surfaces. A double-sided scrub cleaning device, wherein at least a surface rotary brush of the pair of rotary brushes can be separated from the wafer surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28926192A JPH06120192A (en) | 1992-10-01 | 1992-10-01 | Both side scrubbing washing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28926192A JPH06120192A (en) | 1992-10-01 | 1992-10-01 | Both side scrubbing washing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06120192A true JPH06120192A (en) | 1994-04-28 |
Family
ID=17740871
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28926192A Pending JPH06120192A (en) | 1992-10-01 | 1992-10-01 | Both side scrubbing washing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06120192A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0708480A1 (en) * | 1994-10-21 | 1996-04-24 | Shin-Etsu Handotai Company Limited | Method of cleaning semiconductor wafers |
| US5904164A (en) * | 1997-05-23 | 1999-05-18 | Sez Semiconductor-Equipment Zubehor Fur Die Halbleiterfertigung Ag | Arrangement for treatment of wafer-shaped articles, particularly silicon wafers |
| WO2000070656A1 (en) * | 1999-05-14 | 2000-11-23 | Fsi International, Inc. | Apparatus and method for dispensing processing fluid toward a substrate surface |
| US6286525B1 (en) * | 1997-05-08 | 2001-09-11 | Dainippon Screen Mfg. Co. | Substrate cleaning apparatus and method |
| US6405399B1 (en) * | 1999-06-25 | 2002-06-18 | Lam Research Corporation | Method and system of cleaning a wafer after chemical mechanical polishing or plasma processing |
| US6711775B2 (en) * | 1999-06-10 | 2004-03-30 | Lam Research Corporation | System for cleaning a semiconductor wafer |
| KR100417648B1 (en) * | 1996-12-28 | 2004-04-06 | 주식회사 하이닉스반도체 | Wafer cleaning method |
| KR100652040B1 (en) * | 2000-12-29 | 2006-11-30 | 엘지.필립스 엘시디 주식회사 | Etching Device of Glass Substrate |
| CN1299333C (en) * | 1996-08-20 | 2007-02-07 | 奥加诺株式会社 | Method and device for cleaning electronic element or its mfg. equipment element |
| JP2009094534A (en) * | 2008-12-26 | 2009-04-30 | Dainippon Screen Mfg Co Ltd | Etching treatment method of substrate peripheral edge part, and etching treatment apparatus of substrate peripheral edge part |
-
1992
- 1992-10-01 JP JP28926192A patent/JPH06120192A/en active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0708480A1 (en) * | 1994-10-21 | 1996-04-24 | Shin-Etsu Handotai Company Limited | Method of cleaning semiconductor wafers |
| US5626681A (en) * | 1994-10-21 | 1997-05-06 | Shin-Etsu Handotai Co., Ltd. | Method of cleaning semiconductor wafers |
| CN1299333C (en) * | 1996-08-20 | 2007-02-07 | 奥加诺株式会社 | Method and device for cleaning electronic element or its mfg. equipment element |
| KR100417648B1 (en) * | 1996-12-28 | 2004-04-06 | 주식회사 하이닉스반도체 | Wafer cleaning method |
| US6286525B1 (en) * | 1997-05-08 | 2001-09-11 | Dainippon Screen Mfg. Co. | Substrate cleaning apparatus and method |
| US5904164A (en) * | 1997-05-23 | 1999-05-18 | Sez Semiconductor-Equipment Zubehor Fur Die Halbleiterfertigung Ag | Arrangement for treatment of wafer-shaped articles, particularly silicon wafers |
| WO2000070656A1 (en) * | 1999-05-14 | 2000-11-23 | Fsi International, Inc. | Apparatus and method for dispensing processing fluid toward a substrate surface |
| US6274506B1 (en) | 1999-05-14 | 2001-08-14 | Fsi International, Inc. | Apparatus and method for dispensing processing fluid toward a substrate surface |
| US6711775B2 (en) * | 1999-06-10 | 2004-03-30 | Lam Research Corporation | System for cleaning a semiconductor wafer |
| US6405399B1 (en) * | 1999-06-25 | 2002-06-18 | Lam Research Corporation | Method and system of cleaning a wafer after chemical mechanical polishing or plasma processing |
| KR100652040B1 (en) * | 2000-12-29 | 2006-11-30 | 엘지.필립스 엘시디 주식회사 | Etching Device of Glass Substrate |
| JP2009094534A (en) * | 2008-12-26 | 2009-04-30 | Dainippon Screen Mfg Co Ltd | Etching treatment method of substrate peripheral edge part, and etching treatment apparatus of substrate peripheral edge part |
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