KR100766213B1 - 전자 부품 - Google Patents
전자 부품 Download PDFInfo
- Publication number
- KR100766213B1 KR100766213B1 KR1020060111007A KR20060111007A KR100766213B1 KR 100766213 B1 KR100766213 B1 KR 100766213B1 KR 1020060111007 A KR1020060111007 A KR 1020060111007A KR 20060111007 A KR20060111007 A KR 20060111007A KR 100766213 B1 KR100766213 B1 KR 100766213B1
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- 239000003990 capacitor Substances 0.000 claims abstract description 88
- 229910052751 metal Inorganic materials 0.000 claims abstract description 70
- 239000002184 metal Substances 0.000 claims abstract description 70
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 238000000034 method Methods 0.000 claims description 26
- 229910052804 chromium Inorganic materials 0.000 claims description 10
- 229910052719 titanium Inorganic materials 0.000 claims description 10
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 229910052715 tantalum Inorganic materials 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 239000000306 component Substances 0.000 abstract 1
- 239000003989 dielectric material Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 81
- 239000010936 titanium Substances 0.000 description 22
- 230000000052 comparative effect Effects 0.000 description 12
- 238000012360 testing method Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 7
- 150000004706 metal oxides Chemical class 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000002344 surface layer Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910001936 tantalum oxide Inorganic materials 0.000 description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- 240000006829 Ficus sundaica Species 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/008—Selection of materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/228—Terminals
- H01G4/232—Terminals electrically connecting two or more layers of a stacked or rolled capacitor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/10—Inductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Semiconductor Integrated Circuits (AREA)
- Ceramic Capacitors (AREA)
Abstract
Description
Claims (9)
- 기판과,상기 기판 위에 형성된 제1 전극막, 해당 제1 전극막에 대향하는 제2 전극막, 및 해당 제1 및 제2 전극막 사이의 유전체막으로 이루어지는 적층 구조를 갖는 캐패시터부를 구비하고,상기 제1 전극막은, 상기 유전체막측에 산화 피막을 가지며 해당 유전체막과 접합하고 있는 밀착 금속층을 포함하는 다층 구조를 갖는 전자 부품.
- 제1항에 있어서,상기 밀착 금속층은, Ti, Cr, Ta로 이루어지는 군으로부터 선택되는 금속을 포함하는 전자 부품.
- 기판과,상기 기판 위에 형성된 제1 전극막, 해당 제1 전극막에 대향하는 제2 전극막, 및 해당 제1 및 제2 전극막 사이의 유전체막으로 이루어지는 적층 구조를 갖는 캐패시터부를 구비하고,상기 제1 전극막은, Ti, Cr, Ta로 이루어지는 군으로부터 선택되는 금속을 포함해서 상기 유전체막과 접합하고 있는 밀착 금속층을 포함하는 다층 구조를 갖는 전자 부품.
- 제2항 또는 제3항에 있어서,상기 제1 전극막은, 상기 밀착 금속층에 포함되는 상기 금속을 포함해서 상기 기판과 접합하는 밀착층을 포함하는 전자 부품.
- 제1항 내지 제3항 중 어느 한 항에 있어서,상기 제1 전극막은, Cu, Au, Ag, Al로 이루어지는 군으로부터 선택되는 금속을 포함하는 주도전층을 포함하는 전자 부품.
- 제1항 내지 제3항 중 어느 한 항에 있어서,상기 기판 위에 형성된 배선막을 더 구비하고, 해당 배선막은, 상기 제1 전극막의 다층 구조로부터 상기 밀착 금속층을 제외한 층 구조를 갖는 전자 부품.
- 제6항에 있어서,상기 제1 전극막에서의 상기 밀착 금속층 이외의 부위는 상기 배선막과 연속하고 있는 전자 부품.
- 제6항에 있어서,상기 기판 위에 형성된 수동 부품을 더 구비하고, 상기 배선막은, 해당 수동 부품과 상기 캐패시터부 사이의 전기적 경로의 적어도 일부를 구성하는 전자 부품.
- 제6항에 있어서,상기 기판 위에 형성된 전극 패드를 더 구비하고, 상기 배선막은, 해당 전극 패드와 상기 캐패시터부 사이의 전기적 경로의 적어도 일부를 구성하는 전자 부품.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2005-00367673 | 2005-12-21 | ||
JP2005367673A JP4916715B2 (ja) | 2005-12-21 | 2005-12-21 | 電子部品 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20070067598A KR20070067598A (ko) | 2007-06-28 |
KR100766213B1 true KR100766213B1 (ko) | 2007-10-10 |
Family
ID=38184825
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020060111007A KR100766213B1 (ko) | 2005-12-21 | 2006-11-10 | 전자 부품 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7855458B2 (ko) |
JP (1) | JP4916715B2 (ko) |
KR (1) | KR100766213B1 (ko) |
CN (1) | CN1988080B (ko) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7544580B2 (en) * | 2006-12-22 | 2009-06-09 | United Microelectronics Corp. | Method for manufacturing passive components |
JP2009219268A (ja) * | 2008-03-11 | 2009-09-24 | Daikin Ind Ltd | 電力変換装置 |
JP5714361B2 (ja) * | 2011-03-01 | 2015-05-07 | 日本碍子株式会社 | 端子電極形成方法及びそれを用いた圧電/電歪素子の製造方法 |
US9735117B2 (en) * | 2012-01-20 | 2017-08-15 | Skyworks Solutions, Inc. | Devices and methods related to interconnect conductors to reduce de-lamination |
US9343403B2 (en) * | 2014-04-04 | 2016-05-17 | Qualcomm Incorporated | Stress mitigation structure for wafer warpage reduction |
US9893048B2 (en) | 2015-09-14 | 2018-02-13 | Qualcomm Incorporated | Passive-on-glass (POG) device and method |
US10476481B2 (en) * | 2016-08-08 | 2019-11-12 | Qorvo Us, Inc. | Acoustic filtering circuitry including capacitor |
JP6750462B2 (ja) * | 2016-11-04 | 2020-09-02 | Tdk株式会社 | 薄膜コンデンサ及び電子部品内蔵基板 |
JP6725095B2 (ja) | 2018-06-21 | 2020-07-15 | 大日本印刷株式会社 | 配線基板および半導体装置 |
JP7266996B2 (ja) | 2018-11-20 | 2023-05-01 | 太陽誘電株式会社 | インダクタ、フィルタおよびマルチプレクサ |
JPWO2023106083A1 (ko) * | 2021-12-08 | 2023-06-15 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19980063382A (ko) * | 1996-12-06 | 1998-10-07 | 쯔지 하루오 | 강유전체 커패시터의 간단한 제조방법 |
KR20010020937A (ko) * | 1999-06-02 | 2001-03-15 | 이데이 노부유끼 | 유전체 커패시터 및 메모리 및 그들의 제조 방법 |
JP2003045744A (ja) | 2001-07-26 | 2003-02-14 | Kyocera Corp | 薄膜コンデンサ |
KR20040067884A (ko) * | 2003-01-17 | 2004-07-30 | 후지쯔 가부시끼가이샤 | 반도체 장치 및 그 제조 방법 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0354828A (ja) * | 1989-07-24 | 1991-03-08 | Oki Electric Ind Co Ltd | 半導体装置の複合導電層、複合導電層を用いたキャパシタおよび複合導電層の穴開け方法 |
JPH0461264A (ja) | 1990-06-29 | 1992-02-27 | Nippon Telegr & Teleph Corp <Ntt> | Lc複合素子 |
JPH0745475A (ja) * | 1993-06-29 | 1995-02-14 | Hitachi Ltd | 薄膜コンデンサ及びその製造方法 |
JP3098923B2 (ja) * | 1994-12-28 | 2000-10-16 | 松下電子工業株式会社 | 半導体装置およびその製造方法 |
JPH09102590A (ja) | 1995-10-05 | 1997-04-15 | Ricoh Co Ltd | 薄膜キャパシタ |
US6023407A (en) * | 1998-02-26 | 2000-02-08 | International Business Machines Corporation | Structure for a thin film multilayer capacitor |
JP2000068645A (ja) | 1998-08-18 | 2000-03-03 | Toshiba Chem Corp | ビルドアップ型多層プリント配線板の製造方法 |
JP3623377B2 (ja) * | 1998-10-28 | 2005-02-23 | シャープ株式会社 | 半導体装置の製造方法 |
JP2001094058A (ja) * | 1999-09-27 | 2001-04-06 | Toshiba Corp | 半導体装置の製造方法 |
JP2002033239A (ja) | 2000-07-14 | 2002-01-31 | Hitachi Ltd | Lcフィルタ |
JP4286439B2 (ja) * | 2000-08-11 | 2009-07-01 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置の製造方法 |
US7327582B2 (en) * | 2000-09-21 | 2008-02-05 | Ultrasource, Inc. | Integrated thin film capacitor/inductor/interconnect system and method |
JP2002184946A (ja) * | 2000-12-11 | 2002-06-28 | Murata Mfg Co Ltd | Mimキャパシタおよびその製造方法 |
US6998696B2 (en) * | 2001-09-21 | 2006-02-14 | Casper Michael D | Integrated thin film capacitor/inductor/interconnect system and method |
US7038143B2 (en) * | 2002-05-16 | 2006-05-02 | Mitsubishi Denki Kabushiki Kaisha | Wiring board, fabrication method of wiring board, and semiconductor device |
JP3925378B2 (ja) * | 2002-09-30 | 2007-06-06 | ソニー株式会社 | 高周波モジュール装置の製造方法。 |
JP4741177B2 (ja) * | 2003-08-29 | 2011-08-03 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
JP4580633B2 (ja) * | 2003-11-14 | 2010-11-17 | スタンレー電気株式会社 | 半導体装置及びその製造方法 |
JP4649198B2 (ja) * | 2004-12-20 | 2011-03-09 | 新光電気工業株式会社 | 配線基板の製造方法 |
KR100725360B1 (ko) * | 2004-12-27 | 2007-06-07 | 삼성전자주식회사 | Mim 캐패시터 및 그 제조 방법 |
-
2005
- 2005-12-21 JP JP2005367673A patent/JP4916715B2/ja not_active Expired - Fee Related
-
2006
- 2006-10-25 US US11/585,877 patent/US7855458B2/en not_active Expired - Fee Related
- 2006-11-09 CN CN200610144641XA patent/CN1988080B/zh not_active Expired - Fee Related
- 2006-11-10 KR KR1020060111007A patent/KR100766213B1/ko not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19980063382A (ko) * | 1996-12-06 | 1998-10-07 | 쯔지 하루오 | 강유전체 커패시터의 간단한 제조방법 |
KR20010020937A (ko) * | 1999-06-02 | 2001-03-15 | 이데이 노부유끼 | 유전체 커패시터 및 메모리 및 그들의 제조 방법 |
JP2003045744A (ja) | 2001-07-26 | 2003-02-14 | Kyocera Corp | 薄膜コンデンサ |
KR20040067884A (ko) * | 2003-01-17 | 2004-07-30 | 후지쯔 가부시끼가이샤 | 반도체 장치 및 그 제조 방법 |
Also Published As
Publication number | Publication date |
---|---|
US20070158848A1 (en) | 2007-07-12 |
KR20070067598A (ko) | 2007-06-28 |
CN1988080A (zh) | 2007-06-27 |
CN1988080B (zh) | 2011-09-28 |
JP4916715B2 (ja) | 2012-04-18 |
JP2007173437A (ja) | 2007-07-05 |
US7855458B2 (en) | 2010-12-21 |
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