KR100725317B1 - 보호층을 구비한 이미지 센서 - Google Patents
보호층을 구비한 이미지 센서 Download PDFInfo
- Publication number
- KR100725317B1 KR100725317B1 KR1020050022792A KR20050022792A KR100725317B1 KR 100725317 B1 KR100725317 B1 KR 100725317B1 KR 1020050022792 A KR1020050022792 A KR 1020050022792A KR 20050022792 A KR20050022792 A KR 20050022792A KR 100725317 B1 KR100725317 B1 KR 100725317B1
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- image sensor
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- protective layer
- sensor die
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- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 6
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000004811 fluoropolymer Substances 0.000 claims description 3
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- 238000005516 engineering process Methods 0.000 description 4
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Facsimile Heads (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
Claims (7)
- 기판;상기 기판 위에 형성되는 이미지 센서 어레이로서, 상기 이미지 센서는 CMOS 또는 CCD를 포함하는 이미지 센서 어레이;상기 이미지 센서 어레이 상에 배치되는 마이크로 렌즈; 및상기 마이크로 렌즈가 입자 오염되는 것을 방지하기 위해 상기 마이크로 렌즈 상에 형성되는 발수성 및 발유성 특성을 갖는 보호층으로서, 상기 보호층은 PMMA(Polymethylmethacrylate), 폴리탄산에스테르(Polycarbonate), 불소중합체(Fluoropolymer)를 포함하는 보호층을 포함하는 것을 특징으로 하는 이미지 센서 다이.
- 삭제
- 제1항에 있어서, 상기 보호층 상에 형성되는 필터링 층을 더 포함하는 것을 특징으로 하는 이미지 센서 다이.
- 제1항에 있어서, 상기 이미지 센서 어레이 위에 형성되는 컬러 필터를 더 포함하는 것을 특징으로 하는 이미지 센서 다이.
- 제1항에 있어서, 상기 기판의 재료는 글래스, 반도체, 세라믹 또는 수정을 포함하는 것을 특징으로 하는 이미지 센서 다이.
- 제1항에 있어서, 상기 보호층의 두께는 0.5 마이크론 미터(㎛) 이하인 것을 특징으로 하는 이미지 센서 다이.
- 삭제
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/025,746 | 2004-12-29 | ||
US11/025,746 US7525139B2 (en) | 2004-04-28 | 2004-12-29 | Image sensor with a protection layer |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20060076141A KR20060076141A (ko) | 2006-07-04 |
KR100725317B1 true KR100725317B1 (ko) | 2007-06-07 |
Family
ID=36643144
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020050022792A KR100725317B1 (ko) | 2004-12-29 | 2005-03-18 | 보호층을 구비한 이미지 센서 |
Country Status (6)
Country | Link |
---|---|
JP (1) | JP2006190944A (ko) |
KR (1) | KR100725317B1 (ko) |
CN (1) | CN1797777A (ko) |
DE (1) | DE102005016559A1 (ko) |
SG (1) | SG123648A1 (ko) |
TW (1) | TWI251931B (ko) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101439311B1 (ko) * | 2013-07-08 | 2014-09-15 | (주)실리콘화일 | 웨이퍼의 패드 형성 방법 |
KR102487393B1 (ko) * | 2016-04-15 | 2023-01-12 | 에스케이하이닉스 주식회사 | 라이트 필드 모드와 컨벤셔널 모드를 갖는 이미지 센서 |
CN108227050B (zh) * | 2016-12-15 | 2020-11-13 | 日月光半导体(韩国)有限公司 | 光学芯片及其制造方法 |
US20200073019A1 (en) * | 2018-09-04 | 2020-03-05 | GM Global Technology Operations LLC | Protective film for a lens of a sensor |
CN109830492B (zh) * | 2019-01-28 | 2021-05-14 | 深圳奥拦科技有限责任公司 | Cob摄像头模组及其封装方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20030016850A (ko) * | 2001-08-22 | 2003-03-03 | 삼성전자주식회사 | 고체촬상소자 및 그 제조방법 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
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NL184756C (nl) * | 1973-05-29 | 1989-10-16 | Gen Electric | Halfgeleiderinrichting voor het waarnemen van straling. |
JPS59198754A (ja) * | 1983-04-26 | 1984-11-10 | Toshiba Corp | カラ−用固体撮像デバイス |
JPS60233851A (ja) * | 1984-04-17 | 1985-11-20 | Olympus Optical Co Ltd | 固体イメ−ジセンサ |
US5239412A (en) * | 1990-02-05 | 1993-08-24 | Sharp Kabushiki Kaisha | Solid image pickup device having microlenses |
JPH0555535A (ja) * | 1991-08-28 | 1993-03-05 | Nec Corp | 固体撮像素子およびその製造方法 |
DE4139852A1 (de) * | 1991-12-03 | 1993-06-09 | Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften Ev, 3400 Goettingen, De | Optische einrichtung mit einem lumineszenten material und verfahren zu ihrer herstellung |
KR100310102B1 (ko) * | 1998-03-05 | 2001-12-17 | 윤종용 | 고체 컬러 이미지 소자 및 그의 제조 방법 |
US6306688B1 (en) * | 1999-04-28 | 2001-10-23 | Teravicta Technologies, Inc. | Method of reworkably removing a fluorinated polymer encapsulant |
US6307243B1 (en) * | 1999-07-19 | 2001-10-23 | Micron Technology, Inc. | Microlens array with improved fill factor |
US6221687B1 (en) * | 1999-12-23 | 2001-04-24 | Tower Semiconductor Ltd. | Color image sensor with embedded microlens array |
US6821810B1 (en) * | 2000-08-07 | 2004-11-23 | Taiwan Semiconductor Manufacturing Company | High transmittance overcoat for optimization of long focal length microlens arrays in semiconductor color imagers |
KR100533166B1 (ko) * | 2000-08-18 | 2005-12-02 | 매그나칩 반도체 유한회사 | 마이크로렌즈 보호용 저온산화막을 갖는 씨모스이미지센서및 그 제조방법 |
DE10202513B4 (de) * | 2002-01-23 | 2006-03-30 | Infineon Technologies Ag | Selbstreinigende Oberflächen für bildgebende Sensoren |
KR100877879B1 (ko) * | 2002-07-15 | 2009-01-12 | 매그나칩 반도체 유한회사 | 이미지센서 제조방법 |
US6808960B2 (en) * | 2002-10-25 | 2004-10-26 | Omni Vision International Holding Ltd | Method for making and packaging image sensor die using protective coating |
US20040223071A1 (en) * | 2003-05-08 | 2004-11-11 | David Wells | Multiple microlens system for image sensors or display units |
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2004
- 2004-12-30 TW TW093141342A patent/TWI251931B/zh active
-
2005
- 2005-03-18 KR KR1020050022792A patent/KR100725317B1/ko active IP Right Grant
- 2005-03-24 CN CNA2005100590211A patent/CN1797777A/zh active Pending
- 2005-03-28 SG SG200501898A patent/SG123648A1/en unknown
- 2005-04-08 DE DE102005016559A patent/DE102005016559A1/de not_active Withdrawn
- 2005-06-09 JP JP2005169748A patent/JP2006190944A/ja active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20030016850A (ko) * | 2001-08-22 | 2003-03-03 | 삼성전자주식회사 | 고체촬상소자 및 그 제조방법 |
Also Published As
Publication number | Publication date |
---|---|
TW200623402A (en) | 2006-07-01 |
CN1797777A (zh) | 2006-07-05 |
DE102005016559A1 (de) | 2006-07-20 |
SG123648A1 (en) | 2006-07-26 |
JP2006190944A (ja) | 2006-07-20 |
TWI251931B (en) | 2006-03-21 |
KR20060076141A (ko) | 2006-07-04 |
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