KR100541867B1 - 상압 플라즈마 발생용 전극 제조방법 및 전극구조와 이를이용한 상압 플라즈마 발생장치 - Google Patents
상압 플라즈마 발생용 전극 제조방법 및 전극구조와 이를이용한 상압 플라즈마 발생장치 Download PDFInfo
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- KR100541867B1 KR100541867B1 KR1020050076654A KR20050076654A KR100541867B1 KR 100541867 B1 KR100541867 B1 KR 100541867B1 KR 1020050076654 A KR1020050076654 A KR 1020050076654A KR 20050076654 A KR20050076654 A KR 20050076654A KR 100541867 B1 KR100541867 B1 KR 100541867B1
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- electrode
- plasma
- atmospheric pressure
- oxide
- dielectric
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 238000000034 method Methods 0.000 claims description 31
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 150000002500 ions Chemical class 0.000 claims description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 5
- 239000011777 magnesium Substances 0.000 claims description 4
- 239000000395 magnesium oxide Substances 0.000 claims description 4
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 4
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- 239000011701 zinc Substances 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- 230000001681 protective effect Effects 0.000 abstract description 15
- 238000007743 anodising Methods 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 38
- 239000007789 gas Substances 0.000 description 35
- 239000010408 film Substances 0.000 description 32
- 239000010409 thin film Substances 0.000 description 13
- 239000000919 ceramic Substances 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 239000011521 glass Substances 0.000 description 8
- 229910000838 Al alloy Inorganic materials 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 238000005192 partition Methods 0.000 description 6
- 238000002048 anodisation reaction Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000011148 porous material Substances 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 150000001768 cations Chemical class 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- -1 electrons Chemical class 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000011086 high cleaning Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- 230000005596 ionic collisions Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000007750 plasma spraying Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
- H05H1/2443—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes the plasma fluid flowing through a dielectric tube
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
- H05H1/2418—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes the electrodes being embedded in the dielectric
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Fluid Mechanics (AREA)
- Plasma Technology (AREA)
- Cleaning In General (AREA)
Abstract
Description
Claims (8)
- 한 쌍의 전극과,상기 한 쌍의 전극이 상호 이격되어 그 사이에 형성되는 플라즈마 발생공간과,상기 한 쌍의 전극 중 적어도 하나의 표면에 균일하게 형성된 산화피막층을 포함하는 것을 특징으로 하는 플라즈마 전극구조.
- 제1항에 있어서,상기 전극은 표면에 자연적 또는 인위적으로 산화피막을 형성할 수 있는 합금인 것을 특징으로 하는 플라즈마 전극구조.
- 제1항에 있어서,상기 전극은 알루미늄, 티타늄, 마그네슘, 아연, 탄탈륨 중 어느 하나의 합금으로 구성된 것을 특징으로 하는 플라즈마 전극구조.
- 제1항 내지 제3항 중 어느 한 항에 있어서,상기 산화피막층은 산화알루미늄, 산화티타늄, 산화마그네슘, 산화아연, 산화탄탈륨 중 어느 하나인 것을 특징으로 하는 플라즈마 전극구조.
- 제4항에 있어서,상기 산화피막층은 양극산화피막 형성법을 이용하여 형성되는 것을 특징으로 하는 플라즈마 전극구조.
- 한 쌍의 전극과, 상기 한 쌍의 전극 중 적어도 하나의 표면에 균일하게 형성된 산화피막층으로 구성되는 플라즈마 전극을 포함하고;상기 전극의 사이에 형성된 플라즈마 발생공간으로 유입된 가스를 플라즈마 방전하여, 발생된 가스 이온을 피처리물에 분사하는 것을 특징으로 하는 상압 플라즈마 발생장치.
- 전극의 제조방법에 있어서,금속을 이용하여 전극 자체를 형성하고, 상기 전극의 전 표면에 산화피막을 균일하게 형성하는 것을 특징으로 하는 상압 플라즈마 발생용 전극의 제조방법.
- 제7항에 있어서,상기 산화피막은 양극산화피막 형성법을 이용하여 형성되는 것을 특징으로 하는 상압 플라즈마 발생용 전극의 제조방법.
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
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KR1020050076654A KR100541867B1 (ko) | 2005-08-22 | 2005-08-22 | 상압 플라즈마 발생용 전극 제조방법 및 전극구조와 이를이용한 상압 플라즈마 발생장치 |
CN2005101253060A CN1777346B (zh) | 2004-11-15 | 2005-11-15 | 等离子处理装置 |
TW96145958A TWI314338B (en) | 2004-11-15 | 2005-11-15 | Plasma processing apparatus |
TW094140176A TWI308355B (en) | 2004-11-15 | 2005-11-15 | Plasma processing apparatus |
TW96145959A TWI314339B (en) | 2004-11-15 | 2005-11-15 | Plasma processing apparatus |
JP2006224611A JP2007059397A (ja) | 2005-08-22 | 2006-08-21 | 常圧プラズマ発生用電極の製造方法及び電極構造とこれを利用した常圧プラズマの発生装置 |
US11/466,203 US20070182327A1 (en) | 2005-08-22 | 2006-08-22 | Manufacturing method of electrode for atmospheric pressure plasma, electrode structure, and atmospheric pressure plasma apparatus using the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020050076654A KR100541867B1 (ko) | 2005-08-22 | 2005-08-22 | 상압 플라즈마 발생용 전극 제조방법 및 전극구조와 이를이용한 상압 플라즈마 발생장치 |
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Publication Number | Publication Date |
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KR100541867B1 true KR100541867B1 (ko) | 2006-01-11 |
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KR1020050076654A KR100541867B1 (ko) | 2004-11-15 | 2005-08-22 | 상압 플라즈마 발생용 전극 제조방법 및 전극구조와 이를이용한 상압 플라즈마 발생장치 |
Country Status (3)
Country | Link |
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US (1) | US20070182327A1 (ko) |
JP (1) | JP2007059397A (ko) |
KR (1) | KR100541867B1 (ko) |
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KR101845767B1 (ko) | 2016-09-30 | 2018-04-05 | 주식회사 에이아이코리아 | 플라즈마 장치용 전극 및 이의 제조방법 |
KR101870766B1 (ko) * | 2017-03-10 | 2018-06-27 | 주식회사 에이아이코리아 | 플라즈마 전극 어셈블리 및 그 제조방법 |
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KR100988291B1 (ko) | 2008-01-25 | 2010-10-18 | 주식회사 셈테크놀러지 | 평행 평판형 전극 구조를 구비하는 대기압 플라즈마 표면처리 장치 |
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US6037713A (en) * | 1996-11-25 | 2000-03-14 | Fujitsu Limited | Display panel having compound film covered electrodes |
JPH113798A (ja) * | 1997-06-10 | 1999-01-06 | Tokyo Inst Of Technol | プラズマ処理装置およびプラズマ処理方法 |
WO2003005397A2 (en) * | 2001-07-02 | 2003-01-16 | Plasmasol Corporation | A novel electrode for use with atmospheric pressure plasma emitter apparatus and method for using the same |
JP2003022898A (ja) * | 2001-07-06 | 2003-01-24 | Sekisui Chem Co Ltd | 放電プラズマ処理装置及びそれを用いた処理方法 |
JP3876167B2 (ja) * | 2002-02-13 | 2007-01-31 | 川崎マイクロエレクトロニクス株式会社 | 洗浄方法および半導体装置の製造方法 |
US6664737B1 (en) * | 2002-06-21 | 2003-12-16 | Axcelis Technologies, Inc. | Dielectric barrier discharge apparatus and process for treating a substrate |
JP2004103578A (ja) * | 2002-08-23 | 2004-04-02 | Sekisui Chem Co Ltd | プラズマ処理方法 |
JP2004207145A (ja) * | 2002-12-26 | 2004-07-22 | Sekisui Chem Co Ltd | 放電プラズマ処理装置 |
JP2004227990A (ja) * | 2003-01-24 | 2004-08-12 | Kunihide Tachibana | プラズマ処理方法およびプラズマ処理装置 |
JP4055075B2 (ja) * | 2003-07-24 | 2008-03-05 | セイコーエプソン株式会社 | プラズマ処理装置およびプラズマ処理方法 |
-
2005
- 2005-08-22 KR KR1020050076654A patent/KR100541867B1/ko active IP Right Grant
-
2006
- 2006-08-21 JP JP2006224611A patent/JP2007059397A/ja active Pending
- 2006-08-22 US US11/466,203 patent/US20070182327A1/en not_active Abandoned
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101385678B1 (ko) * | 2011-09-29 | 2014-04-15 | 도쿄엘렉트론가부시키가이샤 | 라디칼 선택 장치 및 기판 처리 장치 |
KR101845767B1 (ko) | 2016-09-30 | 2018-04-05 | 주식회사 에이아이코리아 | 플라즈마 장치용 전극 및 이의 제조방법 |
KR101870766B1 (ko) * | 2017-03-10 | 2018-06-27 | 주식회사 에이아이코리아 | 플라즈마 전극 어셈블리 및 그 제조방법 |
KR20200119583A (ko) * | 2019-04-10 | 2020-10-20 | (주) 엔피홀딩스 | 플라즈마 발생 장치 |
KR102242522B1 (ko) * | 2019-04-10 | 2021-04-21 | (주)엔피홀딩스 | 플라즈마 발생 장치 |
WO2024106835A1 (ko) * | 2022-11-16 | 2024-05-23 | 주식회사 인포비온 | 전자 방출원 |
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JP2007059397A (ja) | 2007-03-08 |
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