KR0159415B1 - Method for fabricating optical projection system - Google Patents
Method for fabricating optical projection system Download PDFInfo
- Publication number
- KR0159415B1 KR0159415B1 KR1019950013357A KR19950013357A KR0159415B1 KR 0159415 B1 KR0159415 B1 KR 0159415B1 KR 1019950013357 A KR1019950013357 A KR 1019950013357A KR 19950013357 A KR19950013357 A KR 19950013357A KR 0159415 B1 KR0159415 B1 KR 0159415B1
- Authority
- KR
- South Korea
- Prior art keywords
- sacrificial layer
- deformation
- forming
- manufacturing
- membrane
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 25
- 230000003287 optical effect Effects 0.000 title claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 claims abstract description 16
- 238000004528 spin coating Methods 0.000 claims abstract description 8
- 238000005507 spraying Methods 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims abstract description 6
- 239000012528 membrane Substances 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 16
- 230000001681 protective effect Effects 0.000 claims description 10
- 239000000919 ceramic Substances 0.000 claims description 8
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 239000011159 matrix material Substances 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 claims 1
- 238000001035 drying Methods 0.000 claims 1
- 238000001039 wet etching Methods 0.000 claims 1
- 239000000126 substance Substances 0.000 abstract description 5
- 230000002542 deteriorative effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 18
- 239000010410 layer Substances 0.000 description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 12
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 241001486863 Sprattus sprattus Species 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
- G02B26/0825—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a flexible sheet or membrane, e.g. for varying the focus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N9/00—Details of colour television systems
- H04N9/12—Picture reproducers
- H04N9/31—Projection devices for colour picture display, e.g. using electronic spatial light modulators [ESLM]
- H04N9/3141—Constructional details thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/09372—Pads and lands
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Mechanical Light Control Or Optical Switches (AREA)
- Micromachines (AREA)
Abstract
본 발명은 광로조절장치의 제조방법에 관한 것으로서, 하부 전극의 상부에 증착될 물질을 스퍼터링하여 강한 에너지로 충돌되어 큰 부착력을 갖도록 제1변형부를 형성하고, 이 제1변형부의 상부에 막의 성장 화학적 균일성이 저하되지 않으면서, 성장 속도가 빠르도록 sol-gel 상태에서 스핀 코팅 또는 스프레이 코팅하여 제2변형부를 형성한다. 따라서, 하부전극과 제1변형부 사이의 부착력을 향상시켜 박리를 방지할 수 있으며, 또한, 제2변형부를 짧은 시간에 형성하고, 막의 화학적 균일성이 저하되는 것을 방지할 수 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an optical path control apparatus, wherein a first deformation portion is formed to sputter a material to be deposited on an upper portion of a lower electrode to collide with a strong energy to have a large adhesion, and the growth chemical of the film on the first deformation portion. The second deformation part is formed by spin coating or spray coating in a sol-gel state so as to increase the growth rate without increasing the uniformity. Therefore, the adhesion between the lower electrode and the first deformed portion can be improved to prevent peeling, and the second deformed portion can be formed in a short time and the chemical uniformity of the film can be prevented from deteriorating.
Description
제1a도 내지 제 1d도는 종래 기술에 따른 광로 조절 장치의 제조공정도.1a to 1d is a manufacturing process diagram of the optical path control apparatus according to the prior art.
제2a도 내지 제2d도는 본 발명에 따른 광로 조절 장치의 제조공정도.2a to 2d is a manufacturing process diagram of the optical path control apparatus according to the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
41 : 구동기판 43 : 패드41: drive substrate 43: pad
45 : 희생막 47 : 멤브레인45: sacrificial film 47: membrane
49 : 개구 51 : 플러그49: opening 51: plug
53 : 하부전극 55 : 제1변형부53: lower electrode 55: first deformation part
56 : 제2변형부 57 : 상부전극56: second deformation part 57: upper electrode
59 : 보호막 61 : 에어 갭59: protective film 61: air gap
본 발명은 투사형 화상 표시장치에 이용되는 광로 조절 장치의 제조방법에 관한 것으로서, 특히, 하부전극과 변형부의 부착력이 저하되어 박리되는 것을 방지할 수 있는 광로 조절 장치의 제조방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an optical path adjusting device used in a projection image display device, and more particularly, to a method for manufacturing an optical path adjusting device that can prevent peeling due to a decrease in adhesion force of a lower electrode and a deformable portion.
화상 표시장치는 표시방법에 따라, 직시형 화상 표시장치와 투사형 화상 표시장치로 구분된다.An image display apparatus is classified into a direct view type image display apparatus and a projection type image display apparatus according to a display method.
직시형 화상 표시장치는 CRT(Cathode Ray Tube)등이 있는데, 이러한 CRT 화상 표시장치는 화질은 좋으나, 화면이 커짐에 따라 중량 및 두께의 증대와, 가격이 비싸지는 등의 문제점이 있어 대화면을 구비하는데 한계가 있다.The direct view type image display device includes a CRT (Cathode Ray Tube). The CRT image display device has good image quality, but has a large screen due to problems such as an increase in weight and thickness and a high price as the screen is enlarged. There is a limit.
투사형 화상 표시장치는 대화면 액정표시장치(Liquid Crystal Display : 이하 'LCD'라 칭함)등이 있는데, 이러한 대화면 LCD의 박형화가 가능하여 중량을 작게 할 수 있다. 그러나, 이러한 LCD는 편광판에 의한 광의 손실이 크고 LCD를 구동하기 위한 박막 트랜지스터가 화소 마다 형성되어 있어 개구율(광의 투과면적)을 높이는데 한계가 있으므로 광의 효율이 매우 낮다.Projection type image display apparatuses include a large crystal display (Liquid Crystal Display: hereinafter referred to as "LCD"), and the like. Such a large-screen LCD can be thinned to reduce weight. However, such LCDs have a high loss of light due to a polarizing plate, and thin film transistors for driving the LCD are formed for each pixel, so that there is a limit in increasing the aperture ratio (light transmission area).
따라서, 미합중국 Aura사에 의해 액추에이티드 미러 어레이(Actuated Mirror Arrays : 이하 'AMA'라 칭함)를 이용한 투사형 화상 표시장치가 개발되었다. AMA를 이용한 투사형 화상 표시장치는 광원에서 발광된 백색광을 적색, 녹색 및 청색의 광으로 분리한 후, 이 광을 액츄에이터들로 이루어진 광로 조절 장치의 구동에 의해 광로를 변경 시킨다. 즉, 액츄에이터들에 실장되어 이 액츄에이터들이 개별적으로 구동되는 것에 의해 기울어지는 거울들에 각각 반사시켜 광로(light path)를 변경시키는 것에 의해 광의 양을 조절하여 화면으로 투사시킨다. 그러므로, 화면에 화상이 나타나게된다. 상기에서, 액츄에이터는 압전 또는 전왜세라믹으로 이루어진 변형부가 인가되는 전압에 의해 전계가 발생되어 변형되는 것을 이용하여 거울을 기울게 한다. AMA는 구동방식에 따라 1차원 AMA와 2차원 AMA로 구별된다. 1차원 AMA는 거울들이 M×1 어레이로 배열되고, 2차원 AMA는 거울 들이 M×N 어레이로 배열되고 있다. 따라서, 1차원 AMA를 이용한 투사형 화상표시장치는 주사거울을 이용하여 M×1개 광속들을 선주사시키고, 2차원 AMA를 이용하는 투사형 화상표시장치는 M×N개의 광속들을 투사시켜 화상을 나타내게 된다.Therefore, a projection type image display apparatus using Actuated Mirror Arrays (hereinafter referred to as 'AMA') has been developed by Aura, USA. A projection image display device using AMA separates white light emitted from a light source into red, green, and blue light, and then changes the light path by driving an optical path adjusting device made of actuators. That is, the actuators are mounted on the actuators, and the actuators are individually driven to reflect the inclined mirrors, thereby changing the light path, thereby controlling the amount of light to project onto the screen. Therefore, an image appears on the screen. In the above, the actuator tilts the mirror by using an electric field generated and deformed by a voltage to which a deformable part made of piezoelectric or electrostrictive ceramic is applied. AMA is classified into one-dimensional AMA and two-dimensional AMA according to the driving method. The one-dimensional AMA has mirrors arranged in an M × 1 array, and the two-dimensional AMA has mirrors arranged in an M × N array. Therefore, the projection type image display apparatus using the one-dimensional AMA pre-scans the M × 1 beams using the scanning mirror, and the projection type image display apparatus using the two-dimensional AMA projects the M × N luminous fluxes to display an image.
또한, 액츄에이터는 변형부의 형태에 따라 벌크형(bulk type)과 박막형(thin film type)으로 구분된다. 상기 벌크형은 다층세라믹을 얇게 잘라 내부에 금속전극이 형성된 세라믹웨이퍼(ceramic wafer)를 구동기판에 실장한 후 쏘잉(sawing)등으로 가공하고 거울을 실장한다. 그러나, 벌크형 액츄에이터는 액츄에이터들을 쏘잉에 의해 분리하여야 하므로 긴 공정시간이 필요하며, 또한, 변형부의 응답속도가 느린 문제점이 있었다. 따라서, 반도체공정을 이용하여 제조할 수 있는 박막형의 액츄에이터가 개발되었다.In addition, the actuator is classified into a bulk type and a thin film type according to the shape of the deformable portion. The bulk type thinly cuts a multilayer ceramic, mounts a ceramic wafer having a metal electrode therein on a driving substrate, processes it by sawing, and mounts a mirror. However, bulk actuators require a long process time because the actuators must be separated by sawing, and there is a problem that the response speed of the deformable portion is slow. Therefore, a thin-film actuator that can be manufactured using a semiconductor process has been developed.
제1a도 내지 제1d도는 종래 기술에 따른 광로조절장치의 제조 공정도이다.1a to 1d is a manufacturing process diagram of the optical path control apparatus according to the prior art.
제1a도를 참조하면, 표면에 트랜지스터(도시되지 않음)가 매트릭스 형태로 내장되고, 이 트랜지스터에 전기적으로 연결된 Al 등의 금속으로 이루어진 패드(13)를 갖는 구동기판(11)의 표면에 에어 갭(air gap)을 형성하기 위한 희생막(15)을 1~2㎛ 정도의 두께로 형성한다. 그리고, 패드(13)가 형성된 부분의 희생막(15)을 통상의 포토리쏘그래피(photolithography) 방법으로 제거하여 패드(13)와 주위의 구동기판(11)을 노출시킨다.Referring to FIG. 1A, an air gap is formed on a surface of a driving substrate 11 having a pad 13 made of a metal such as Al having a transistor (not shown) embedded in the surface thereof and electrically connected to the transistor. A sacrificial film 15 for forming an air gap is formed to a thickness of about 1 to 2 μm. Then, the sacrificial film 15 in the portion where the pad 13 is formed is removed by a conventional photolithography method to expose the pad 13 and the surrounding driving substrate 11.
제1b도를 참조하면, 상기 구동기판(11)과 희생막(15)의 상부에 멤브레인(17)을 1~2㎛ 정도의 두께로 형성한다. 그리고, 멤브레인(17)의 소정 부분에 패드(13)가 노출되도록 홈을 형성한 후, 이 홈의 내부에 전도성 금속을 채워 패드(13)들과 전기적으로 연결되는 플러그(plug:19)를 형성한다. 계속해서, 멤브레인(17)의 상부에 백금(Pt) 등을 500~2000Å 정도 두께로 증착하여 플러그(19)와 전기적으로 연결되는 하부전극(21)을 형성한다. 그러므로, 패드(13)와 하부전극(21)은 플러그(19)에 의해 서로 전기적으로 연결된다.Referring to FIG. 1B, the membrane 17 is formed on the driving substrate 11 and the sacrificial layer 15 to a thickness of about 1 to 2 μm. In addition, after the grooves are formed to expose the pads 13 in the predetermined portion of the membrane 17, a conductive metal is filled in the grooves to form plugs 19 that are electrically connected to the pads 13. do. Subsequently, platinum (Pt) or the like is deposited on the membrane 17 to a thickness of about 500 to 2000 microns to form a lower electrode 21 electrically connected to the plug 19. Therefore, the pad 13 and the lower electrode 21 are electrically connected to each other by the plug 19.
제1c도를 참조하면, 상기 하부전극(21)의 표면에 변형부(23) 및 상부전극(25)을 형성한다. 상기에서, 변형부(23)를 압전 세라믹이나 전왜세라믹을 0.7~2㎛ 정도의 두께로 sol-gel 상태에서 스핀코팅 또는 스프레이 코팅하거나, 또는, 스퍼터링하여 형성한다. 그리고, 상부전극(25)을 반사특성과 전기적특성이 좋은 금속을 증착하여 형성된다. 계속해서, 상부전극(25), 변형부(23), 하부전극(21) 및 멤브레인(17)들을 구동기판(11)이 노출되도록 식각하여 액츄에이터들을 분리한다. 상기 액츄에이터들을 분리할 때, 상부전극(25), 변형부(23), 하부전극(21) 및 멤브레인(17)들을 각각의 식각 마스크를 사용하여 반응성 이온 식각(RIE) 방법으로 식각한다. 그리고, 상부전극(25)의 표면과 액츄에이터 들의 분리에 의한 측면들에 보호막(27)을 형성한다.Referring to FIG. 1C, the deformation part 23 and the upper electrode 25 are formed on the surface of the lower electrode 21. In the above, the deformable portion 23 is formed by spin coating or spray coating or sputtering a piezoelectric ceramic or a total distortion ceramic in a sol-gel state to a thickness of about 0.7 to 2 μm. The upper electrode 25 is formed by depositing a metal having good reflection and electrical properties. Subsequently, the upper electrode 25, the deformable portion 23, the lower electrode 21, and the membrane 17 are etched to expose the driving substrate 11 to separate the actuators. When the actuators are separated, the upper electrode 25, the deformable portion 23, the lower electrode 21, and the membrane 17 are etched by using a reactive ion etching (RIE) method using respective etching masks. Then, the protective film 27 is formed on the surface of the upper electrode 25 and the side surfaces of the actuators separated from each other.
제1d도를 참조하면, 희생막(15)을 불산용액(HF) 등의 식각 용액으로 제거한다. 이때, 보호막(27)은 멤브레인(17) 및 변형부(23)의 측면이 식각되어 각층들이 박리되는 것을 방지한다. 그 다음, 보호막(27)을 제거하여 에어 갭(29)을 형성한다.Referring to FIG. 1d, the sacrificial layer 15 is removed with an etching solution such as hydrofluoric acid solution (HF). In this case, the protective layer 27 prevents sidewalls of the membrane 17 and the deformable portion 23 from being etched to separate the layers. The protective film 27 is then removed to form an air gap 29.
그러나, 상술한 종래 기술에 따른 광로 조절 장치의 제조방법은 sol-gel 상태에서 스핀코팅 또는 스프레이 코팅하여 형성된 변형부와 하부전극과의 결합력이 작아 박리되는 문제점이 있었다. 또한, 변형부를 스퍼터링 방법으로 형성하는 경우에는 막을 형성하는데 긴 시간이 소요되며, 또한, 막의 화학적 균일성(chemical homogeneity)이 저하되는 문제점이 있었다.However, the manufacturing method of the optical path control apparatus according to the prior art described above has a problem in that the bonding force between the deformable portion formed by spin coating or spray coating in the sol-gel state and the lower electrode is small, and thus peeled off. In addition, when the deformation portion is formed by the sputtering method, it takes a long time to form the film, and there is a problem that the chemical homogeneity of the film is lowered.
따라서, 본 발명의 목적은 하부전극과 변형부 사이의 부착력을 향상시켜 박리를 방지할 수 있는 광로 조절 장치의 제조방법을 제공함에 있다.Accordingly, it is an object of the present invention to provide a method of manufacturing an optical path control apparatus capable of preventing peeling by improving adhesion between the lower electrode and the deformable portion.
본 발명의 다른 목적은 변형부를 짧은 시간에 형성하고, 막의 화학적 균일성이 저하되는 것을 방지할 수 있는 광로 조절 장치의 제조방법을 제공함에 있다.Another object of the present invention is to provide a method for manufacturing an optical path control apparatus which can form a deformation portion in a short time and can prevent the chemical uniformity of the film from being lowered.
상기 목적들을 달성하기 위한 본 발명에 따른 광로 조절 장치의 제조방법은 트랜지스터들을 매트릭스 상태로 내장하고, 표면에 상기 트랜지스터들과 전기적으로 연결된 패드들을 갖는 구동기판의 상부에 희생막을 형성하는 공정과, 상기 패드들 주위의 소정 부분의 상기 희생막을 제거하여 상기 구동기판을 노출시키고, 상기 노출된 구동기판과 상기 희생막의 상부에 멤브레인을 형성하는 공정과, 상기 멤브레인의 소정 부분을 상기 패드가 노출되도록 제거하여 개구를 형성하고 그 개구에 플러그를 형성하는 공정과, 상기 멤브레인의 상부에 상기 플러그와 전기적으로 접촉되는 하부전극을 형성하는 공정과, 상기 하부전극의 상부에 제1 및 제2변형부와 상부전극을 순차적으로 형성하는 공정과, 상기 상부전극 부터 상기 멤브레인까지 소정 부분을 상기 희생막이 노출되도록 제거하여 액츄에이터들을 분리하는 공정과, 상기 상부전극의 표면 및 액츄에이터의 측면에 보호막을 형성하는 공정과, 상기 희생막 및 상기 보호막을 제거하는 공정을 구비한다.According to an aspect of the present invention, there is provided a method of manufacturing an optical path control apparatus, including forming transistors in a matrix state and forming a sacrificial layer on an upper surface of a driving substrate having pads electrically connected to the transistors on a surface thereof. Removing the sacrificial layer around predetermined portions of the pads to expose the driving substrate, and forming a membrane on the exposed driving substrate and the sacrificial layer, and removing the predetermined portion of the membrane to expose the pad. Forming an opening and forming a plug in the opening; forming a lower electrode in electrical contact with the plug on the membrane; first and second deformable portions and an upper electrode on the lower electrode; And sequentially forming a predetermined portion from the upper electrode to the membrane. And a step of a step of the sacrificial film is removed to separate the actuator so as to be exposed, and a step of forming a protective film on the side surface of the actuator and the upper electrode, and removing the sacrificial layer and the protective film.
이하, 첨부한 도면을 참조하여 본 발명을 상세히 설명한다.Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
제2a도 내지 제2d도는 본 발명에 따른 광로 조절 장치의 제조공정도이다.2a to 2d is a manufacturing process diagram of the optical path control apparatus according to the present invention.
제2a도를 참조하면, 표면에 트랜지스터(도시되지 않음)가 매트릭스 형태로 내장되고, 이 트랜지스터에 전기적으로 연결된 패드(43)를 갖는 구동기판(41)의 표면에 1~2㎛ 정도의 두께의 희생막(45)을 형성한다. 상기에서, 구동기판(41)은 유리 또는 알루미나(Al2O3)등의 절연물질, 또는, 실리콘등의 반도체로 이루어진다. 상기에서, 희생막(45)을 PSG(Phospho-Silicate Glass) 또는 다결정 실리콘으로 형성하며 이들은 화학기상침적(Chemical Vapor Deposition : 이하, CVD라 칭함)법으로 형성된다. 그리고, 패드(43)들의 주위를 포함한 소정 부분의 희생막(45)을 식각하여 구동기판(41)을 노출시킨다.Referring to FIG. 2A, a transistor (not shown) is embedded in a matrix on a surface thereof and has a thickness of about 1 μm to 2 μm on a surface of a driving substrate 41 having a pad 43 electrically connected to the transistor. The sacrificial layer 45 is formed. In the above, the driving substrate 41 is made of an insulating material such as glass or alumina (Al 2 O 3 ), or a semiconductor such as silicon. In the above, the sacrificial film 45 is formed of PSG (Phospho-Silicate Glass) or polycrystalline silicon, and they are formed by chemical vapor deposition (hereinafter, referred to as CVD). Then, the sacrificial film 45 of the predetermined portion including the pads 43 is etched to expose the driving substrate 41.
제2b도를 참조하면, 상기 구동기판(41) 및 희생막(47)의 상부에 질화실리콘(Si3N4) 또는 탄화실리콘 등의 규화물을 스터퍼링 또는 CVD방법 등에 의해 1~2㎛ 정도의 두께로 침적하여 멤브레인(47)을 형성한다. 그 다음, 통상의 포토리쏘그래피 방법에 의해 멤브레인(49)의 소정 부분에 개구(49)를 형성하고, 이 개구(49)의 내부에 텅스텐(W) 또는 티타늄(Ti) 등의 금속을 채워 패드(43)들과 전기적으로 연결되는 플러그(plug:51)를 형성한다. 계속해서, 멤브레인(47)의 상부에 백금(Pt) 또는 백금/티타늄(Pt/Ti) 또는 백금/탄탈늄(Pt/Ta) 등을 진공 증착 또는 스퍼터링 등에 의해 500~2000Å 정도의 두께로 증착하여 하부전극(53)을 형성한다. 상기에서 하부전극(53)을 플러그(51)와 전기적으로 연결되도록 형성한다. 그러므로, 플러그(51)에 의해 패드(43)와 하부전극(53)이 전기적으로 연결된다.Referring to FIG. 2B, silicides such as silicon nitride (Si 3 N 4 ) or silicon carbide, such as silicon nitride (Si 3 N 4 ) or silicon carbide, may be formed on the driving substrate 41 and the sacrificial layer 47 by about 1 to 2 μm. It is deposited to a thickness to form the membrane 47. Then, an opening 49 is formed in a predetermined portion of the membrane 49 by a conventional photolithography method, and the pad is filled with metal such as tungsten (W) or titanium (Ti) inside the opening 49. And a plug 51 that is electrically connected to the 43. Subsequently, platinum (Pt), platinum / titanium (Pt / Ti), platinum / tantalum (Pt / Ta), or the like is deposited on the membrane 47 to a thickness of about 500 to 2000 kPa by vacuum deposition or sputtering. The lower electrode 53 is formed. The lower electrode 53 is formed to be electrically connected to the plug 51. Therefore, the pad 43 and the lower electrode 53 are electrically connected by the plug 51.
제2c도를 참조하면, 상기 하부전극(53)의 표면에 제1변형부(56)를 형성한다. 상기에서 제1변형부(56)를 BaTiO3, PZT(Pb(Zr, Ti)O3) 또는 PLZT(Pb, La)(Zr, Ti)O3) 등의 압전세라믹이나, 또는, PMN(Pb(Mg, Nb)O3)등의 전왜세라믹을 스퍼터링하여 200~2000Å 정도의 두게로 형성한다. 상기에서, 제1변형부(56)는 증착될 물질이 하부전극(53)에 강한 에너지로 충돌되어 증착되므로 부착력이 크게 된다. 그 다음, 제1변형부(56)의 상부에 상기 제1변형부(56)와 동일한 물질을 Sol-Gel 상태에서 스핀 코팅(spin coatign) 또는 스프레이 코팅(sprat coating)으로 0.2~2㎛ 정도의 두께로 도포하여 제2변형부(55)를 형성한다. 제2변형부(55)는 제1변형부(56)와 동일한 물질이 스핀 코팅 또는 스프레이 코팅에 의해 형성되므로 부착 특성이 양호할 뿐만 아니라 빠른 시간에 형성된다. 상기에서, 제1변형부(56)와 제2변형부(55)를 합한 두께가 얇게 형성되므로 별도의 분극을 하지 않고도 구동시 인가되는 화상신호에 의해 분극된다. 계속해서, 제2변형부(55)의 상부에 상부전극(57)을 형성한다. 상기 상부전극(57)은 전기 전도도 및 반사 특성이 좋은 금속인 알루미늄이 스퍼터링 또는 진공증착방법으로 500~1000Å 정도의 두께로 증착되어 형성된다. 그리고, 상부전극(57), 제1 및 제2변형부(56)(55), 하부전극(53) 및 멤브레인(47)을 포토리쏘그래피 방법으로 소정 부분을 제거하여 액츄에이터들을 분리한다. 이때, 상부전극(57), 변형부(55, 56), 하부전극(53) 및 멤브레인(47)은 각층 마다 각각의 식각 마스크가 필요하게 된다. 또한, 제1 및 제2변형부(56)(55)는 동일한 마스크를 사용하여 동시에 식각할 수도 있다. 그리고, 상술한 구조의 전 표면에 포토레지스트를 도포한 후 노광 및 현상하여 보호막(59)을 형성한다. 상기 보호막(59)은 상부전극(57)의 표면과 액츄에이터들을 분리할 때 생성되는 측면들에 형성된다.Referring to FIG. 2C, a first deformation part 56 is formed on the surface of the lower electrode 53. In the above-described first deformable portion 56, piezoelectric ceramics such as BaTiO 3 , PZT (Pb (Zr, Ti) O 3 ) or PLZT (Pb, La) (Zr, Ti) O 3 ), or PMN (Pb) The spherical ceramics such as (Mg, Nb) O 3 ) are sputtered to form a thickness of about 200 ~ 2000Å. In the above, since the material to be deposited collides with the lower electrode 53 with strong energy and is deposited, the adhesion force is increased. Next, on the upper portion of the first deformation portion 56, the same material as the first deformation portion 56 in the Sol-Gel state by spin coating or spin coating (spin coatign) or spray coating (sprat coating) of about 0.2 ~ 2㎛ The second deformed portion 55 is formed by applying a thickness. The second deformable portion 55 is formed by spin coating or spray coating because the same material as the first deformable portion 56 is not only excellent in adhesion characteristics but also formed in a short time. In the above, since the thickness of the sum of the first deformable portion 56 and the second deformed portion 55 is formed to be thin, the polarization is performed by the image signal applied during driving without any additional polarization. Subsequently, the upper electrode 57 is formed on the second deformable portion 55. The upper electrode 57 is formed by depositing a metal having good electrical conductivity and reflective properties to a thickness of about 500 to 1000 mW by sputtering or vacuum deposition. The actuators are separated by removing a predetermined portion of the upper electrode 57, the first and second deformable portions 56 and 55, the lower electrode 53 and the membrane 47 by a photolithography method. In this case, each of the upper electrodes 57, the deformable parts 55 and 56, the lower electrode 53 and the membrane 47 requires an etching mask for each layer. In addition, the first and second deformations 56 and 55 may be simultaneously etched using the same mask. Then, the photoresist is applied to the entire surface of the structure described above, followed by exposure and development to form the protective film 59. The passivation layer 59 is formed on the surface of the upper electrode 57 and side surfaces generated when the actuators are separated.
제2d도를 참조하면, 희생막(45)을 불산(HF) 등의 식각용액으로 제거하여 에어 갭(61)을 한정한다. 상기에서 보호막(59)은 희생막(45)을 식각할 때 상부전극(57)의 표면과 제1 및 제2변형부(56)(55) 등의 측면이 식각용액과 접촉되어 식각되는 것을 방지한다. 그 다음, 탈이온수로 세정하여 액츄에이터에 묻은 식각용액을 제거한 후 건조하고, 보호막(59)을 태우거나 또는 플라즈마 등의 건식 식각방법으로 제거한다.Referring to FIG. 2D, the sacrificial film 45 is removed with an etching solution such as hydrofluoric acid (HF) to define the air gap 61. The protective layer 59 prevents the surface of the upper electrode 57 and the side surfaces of the first and second deformable portions 56 and 55 from being etched by the etching solution when the sacrificial layer 45 is etched. do. Then, the solution is washed with deionized water to remove the etching solution from the actuator and dried, and the protective film 59 is burned or removed by dry etching such as plasma.
상술한 바와 같이 본 발명은 하부전극의 상부에 증착될 물질을 스퍼터링하여 강한 에너지로 충돌되어 큰 부착력을 갖도록 제1변형부를 형성하고, 이 제1변형부의 상부에 막의 성장 화학적 균일성이 저하되지 않으면서, 성장 속도가 빠르도록 sol-gel 상태에서 스핀 코팅 또는 스프레이 코팅하여 제2변형부를 형성한다.As described above, the present invention sputters a material to be deposited on the lower electrode to form a first deformation portion to have a large adhesion by colliding with a strong energy. In this case, the second strain is formed by spin coating or spray coating in a sol-gel state to increase the growth rate.
따라서, 하부전극과 제1변형부 사이의 부착력을 향상시켜 박리를 방지할 수 있으며, 또한 제2변형부를 짧은 시간에 형성하고 막의 화학적 균일성이 저하되는 것을 방지할 수 있는 잇점이 있다.Therefore, the adhesive force between the lower electrode and the first deformed portion can be improved to prevent peeling, and the second deformed portion can be formed in a short time and the chemical uniformity of the film can be prevented from being lowered.
Claims (13)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950013357A KR0159415B1 (en) | 1995-05-26 | 1995-05-26 | Method for fabricating optical projection system |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950013357A KR0159415B1 (en) | 1995-05-26 | 1995-05-26 | Method for fabricating optical projection system |
Publications (2)
Publication Number | Publication Date |
---|---|
KR960043849A KR960043849A (en) | 1996-12-23 |
KR0159415B1 true KR0159415B1 (en) | 1999-01-15 |
Family
ID=19415490
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950013357A KR0159415B1 (en) | 1995-05-26 | 1995-05-26 | Method for fabricating optical projection system |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR0159415B1 (en) |
-
1995
- 1995-05-26 KR KR1019950013357A patent/KR0159415B1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR960043849A (en) | 1996-12-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100207410B1 (en) | Fabrication method for lightpath modulation device | |
KR100209401B1 (en) | Fabrication method for lightpath modulation device | |
KR0159415B1 (en) | Method for fabricating optical projection system | |
KR0159393B1 (en) | Method for fabricating optical projection system | |
KR0170952B1 (en) | Method for fabricating optical projection system | |
KR0159394B1 (en) | Method for fabricating optical projection system | |
KR0170958B1 (en) | Method for fabricating optical projection system | |
KR100195640B1 (en) | Method for fabricating an optical projection system | |
KR0178217B1 (en) | Manufacturing method of optical path regulation apparatus | |
KR0154959B1 (en) | Method for manufacturing optical path control device | |
KR0154924B1 (en) | Method for manufacturing optical path control apparatus | |
KR0178220B1 (en) | Manufacturing method of optical path regulation apparatus | |
KR100239044B1 (en) | Method for manufacturing thin film actuated mirror array | |
KR0154925B1 (en) | Method for manufacturing optical path control apparatus | |
KR0154923B1 (en) | Method for manufacturing optical path control apparatus | |
KR0177246B1 (en) | Method for fabricating an optical projection system | |
KR100207409B1 (en) | Fabrication method for lightpath modulation device | |
KR0177250B1 (en) | An optical projection system | |
KR0154958B1 (en) | Method for manufacturing optical path control apparatus | |
KR100291551B1 (en) | Method for manufacturing thin film actuated mirror array | |
KR0154928B1 (en) | Optical path control apparatus | |
KR100239045B1 (en) | Method for manufacturing thin film actuated mirror array | |
KR0178235B1 (en) | Manufacturing method of optical path regulation apparatus | |
KR0177245B1 (en) | Method for fabricating an optical projection system | |
KR100237602B1 (en) | Fabrication method for thin film actuated mirror array |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20020729 Year of fee payment: 5 |
|
LAPS | Lapse due to unpaid annual fee |