KR960043849A - Manufacturing method of optical path control device - Google Patents

Manufacturing method of optical path control device Download PDF

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Publication number
KR960043849A
KR960043849A KR1019950013357A KR19950013357A KR960043849A KR 960043849 A KR960043849 A KR 960043849A KR 1019950013357 A KR1019950013357 A KR 1019950013357A KR 19950013357 A KR19950013357 A KR 19950013357A KR 960043849 A KR960043849 A KR 960043849A
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KR
South Korea
Prior art keywords
manufacturing
optical path
sacrificial layer
forming
control device
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KR1019950013357A
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Korean (ko)
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KR0159415B1 (en
Inventor
김종삼
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배순훈
대우전자 주식회사
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Priority to KR1019950013357A priority Critical patent/KR0159415B1/en
Publication of KR960043849A publication Critical patent/KR960043849A/en
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Publication of KR0159415B1 publication Critical patent/KR0159415B1/en

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
    • G02B26/0825—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a flexible sheet or membrane, e.g. for varying the focus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N9/00—Details of colour television systems
    • H04N9/12—Picture reproducers
    • H04N9/31—Projection devices for colour picture display, e.g. using electronic spatial light modulators [ESLM]
    • H04N9/3141—Constructional details thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09209—Shape and layout details of conductors
    • H05K2201/09372—Pads and lands

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)
  • Micromachines (AREA)

Abstract

본 발명은 광로조절장치의 제조방법에 관한 것으로서, 하부전극의 상부에 증착될 물질을 스퍼터링하여 강한 에너지로 충돌하여 큰부착력을 갖도록 제1변형부를 형성하고, 이 제1변형부의 상부에 막의 성장 화학적 균일성이 저하되지 않으면서 성장 속도가 빠르도록 sol-gel상태에서 스핀 코팅 또는 스프레이 코팅하여 제2변형부를 형성한다. 따라서, 하부전극과 제1변형부 사이의 부착력을 향상시켜 박리를 방지할 수 있으며, 또한, 제2변형부를 짧은 시간에 형성하고 막의 화학적 균일성이 저하되는 것을 방지할 수 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an optical path control device, wherein a first deformation portion is formed to sputter a material to be deposited on an upper portion of a lower electrode and collide with strong energy to have a large adhesion force. The second deformed portion is formed by spin coating or spray coating in a sol-gel state so that the growth speed is high without uniformity. Therefore, the adhesion between the lower electrode and the first deformed portion can be improved to prevent peeling, and the second deformed portion can be formed in a short time and the chemical uniformity of the film can be prevented from deteriorating.

Description

광로 조절 장치의 제조방법Manufacturing method of optical path control device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도(A) 내지 (D)는 본 발명에 따른 광로 조절 장치의 제조공정도.2 (A) to (D) is a manufacturing process diagram of the optical path control apparatus according to the present invention.

Claims (13)

트랜지스터들을 매트릭스 상태로 내장하고, 표면에 상기 트랜지스터들과 전기적으로 연결된 패드(43)들을갖는 구동기판(41)의 상부에 희생막(45)을 형성하는 공정과, 상기 패드(43)들 주위의 소정 부분의 상기 희생막(45)을 제거하여 상기 구동기판(41)을 노출시키고, 상기 노출된 구동기판(41)과 상기 희생막(45)의 상부에 멤브레인(47)을 형성하는 공정과, 상기 멤브레인(47)의 소정 부분을 상기 패드(43)가 노출되도록 제거하여 개구(49)를 형성하고, 그 개구(49)에플러그(51)를 형성하는 공정과, 상기 멤브레인(47)의 상부에 상기 플러그(51)와 전기적으로 접촉되는 하부전극(53)을 형성하는 공정과, 상기 하부전극(53)의 상부에 제1 및 제2변형부(56)(55)와 상부전극(57)을 순차적으로 형성하는 공정과,상기 상부전극(57) 부터 상기 멤브레인(47)까지 소정 부분을 상기 희생막(45)이 노출되도록 제거하여 액츄에이터들을 분리하는 공정과, 상기 상부전극(57)의 표면 및 액츄에이터의 측면에 보호막(59)을 형성하는 공정과, 상기 희생막(45) 및상기 보호막(59)을 제거하는 공정을 구비하는 광로 조절 장치의 제조방법.Forming a sacrificial layer 45 on top of the driving substrate 41 having the transistors in a matrix state and having pads 43 electrically connected to the transistors on a surface thereof, and around the pads 43. Removing the sacrificial layer 45 in a predetermined portion to expose the driving substrate 41, and forming a membrane 47 on the exposed driving substrate 41 and the sacrificial layer 45; Removing a predetermined portion of the membrane 47 so that the pad 43 is exposed to form an opening 49, and forming a plug 51 in the opening 49, and an upper portion of the membrane 47. Forming a lower electrode 53 in electrical contact with the plug 51, and first and second deformation parts 56 and 55 and an upper electrode 57 on the lower electrode 53. And sequentially forming the predetermined portion from the upper electrode 57 to the membrane 47. Removing the 45 to expose the actuators, forming a passivation layer 59 on the surface of the upper electrode 57 and the side of the actuator, and forming the sacrificial layer 45 and the passivation layer 59. Method of manufacturing an optical path control device having a step of removing the. 제1항에 있어서, 상기 제1변형부(56)를 BaTiO3, PZT 또는 PLZT의 압전세라믹으로 형성하는 광로 조절 장치의 제조방법.The method of manufacturing an optical path control device according to claim 1, wherein the first deformation part (56) is formed of a piezoelectric ceramic of BaTiO3, PZT or PLZT. 제1항에 있어서, 상기 제1변형부(56)를 PMN의 전왜세라믹으로 형성하는 광로 조절 장치의 제조방법.The method of manufacturing an optical path control device according to claim 1, wherein the first deformable portion (56) is formed of a total distortion ceramic of PMN. 제2항 또는 제3항에 있어서, 상기 제1변형부(56)를 스퍼터링하여 형성하는 광로 조절 장치의 제조방법.The method of manufacturing an optical path adjusting device according to claim 2 or 3, wherein the first deforming part is formed by sputtering. 제4항에 있어서, 상기 제1변형부(56)를 200~2000Å의 두께로 형성하는 광로 조절 장치의 제조방법.The method of manufacturing an optical path control device according to claim 4, wherein the first deformation part (56) is formed to a thickness of 200 to 2000 kPa. 제1항에 있어서, 상기 제2변형부(55)를 상기 제1변형부(56)와 동일한 물질로 형성하는 광로 조절 장치의제조방법.The method of claim 1, wherein the second deformation portion (55) is formed of the same material as the first deformation portion (56). 제6항에 있어서, 상기 제2변형부(55)를 sol-gel 상태에서 스핀 코팅 또는 스프레이 코팅하여 형성하는 광로 조절 장치의 제조방법.The method of claim 6, wherein the second deformation part (55) is formed by spin coating or spray coating in a sol-gel state. 제7항에 있어서, 상기 제2변형부(55)를 0.2~2㎛의 두께로 형성하는 광로 조절 장치의 제조방법.The method of manufacturing a light path adjusting device according to claim 7, wherein the second deformation part (55) is formed to a thickness of 0.2 to 2 mu m. 제1항에 있어서, 상기 액츄에이터 분리시 제1 및 제2변형부(56)(55)를 각각의 마스크로 식각하는 광로 조절 장치의 제조방법.The method of claim 1, wherein the first and second deformable portions (56, 55) are etched with respective masks when the actuator is separated. 제1항에 있어서, 상기 액츄에이터 분리시 제1 및 제2변형부(56)(55)를 동일한 마스크로 식각하는 광로 조절 장치의 제조방법.The method of claim 1, wherein the first and second deformable portions (56, 55) are etched with the same mask when the actuator is separated. 제1항에 있어서, 상기 희생막(45)을 습식식각 방법으로 제거하는 광로 조절 장치의 제조 방법.The method of claim 1, wherein the sacrificial layer is removed by a wet etching method. 제1항에 있어서, 상기 희생막(45) 제거 후 세정 및 건조하는 공정을 더 구비하는 광로조절장치의 제조 방법.The method of claim 1, further comprising: cleaning and drying the sacrificial layer after removing the sacrificial layer. 제1항에 있어서, 상기 보호막(59)을 태우거나 또는 플라즈마를 이용하는 건식식각 방법으로 제거하는 광로조절장치의 제조방법.The method of claim 1, wherein the protective film (59) is burned or removed by a dry etching method using plasma. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950013357A 1995-05-26 1995-05-26 Method for fabricating optical projection system KR0159415B1 (en)

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Application Number Priority Date Filing Date Title
KR1019950013357A KR0159415B1 (en) 1995-05-26 1995-05-26 Method for fabricating optical projection system

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Application Number Priority Date Filing Date Title
KR1019950013357A KR0159415B1 (en) 1995-05-26 1995-05-26 Method for fabricating optical projection system

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KR960043849A true KR960043849A (en) 1996-12-23
KR0159415B1 KR0159415B1 (en) 1999-01-15

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