JPWO2023013435A1 - - Google Patents

Info

Publication number
JPWO2023013435A1
JPWO2023013435A1 JP2023540253A JP2023540253A JPWO2023013435A1 JP WO2023013435 A1 JPWO2023013435 A1 JP WO2023013435A1 JP 2023540253 A JP2023540253 A JP 2023540253A JP 2023540253 A JP2023540253 A JP 2023540253A JP WO2023013435 A1 JPWO2023013435 A1 JP WO2023013435A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023540253A
Other versions
JPWO2023013435A5 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2023013435A1 publication Critical patent/JPWO2023013435A1/ja
Publication of JPWO2023013435A5 publication Critical patent/JPWO2023013435A5/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02101Cleaning only involving supercritical fluids
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02057Cleaning during device manufacture
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2023540253A 2021-08-05 2022-07-22 Pending JPWO2023013435A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021129085 2021-08-05
PCT/JP2022/028434 WO2023013435A1 (ja) 2021-08-05 2022-07-22 基板処理方法および基板処理装置

Publications (2)

Publication Number Publication Date
JPWO2023013435A1 true JPWO2023013435A1 (ja) 2023-02-09
JPWO2023013435A5 JPWO2023013435A5 (ja) 2024-04-17

Family

ID=85155585

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023540253A Pending JPWO2023013435A1 (ja) 2021-08-05 2022-07-22

Country Status (5)

Country Link
JP (1) JPWO2023013435A1 (ja)
KR (1) KR20240038070A (ja)
CN (1) CN117716476A (ja)
TW (1) TW202325416A (ja)
WO (1) WO2023013435A1 (ja)

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2574781B2 (ja) * 1987-01-21 1997-01-22 株式会社日立製作所 超臨界ガス又は液化ガスによる基板の洗浄方法
JP3835593B2 (ja) * 2001-06-13 2006-10-18 大日本スクリーン製造株式会社 高圧処理装置
JP2004225152A (ja) * 2003-01-27 2004-08-12 Tokyo Electron Ltd 基板処理方法および半導体装置の製造方法
JP2004228526A (ja) * 2003-01-27 2004-08-12 Tokyo Electron Ltd 基板処理方法および半導体装置の製造方法
US7345000B2 (en) 2003-10-10 2008-03-18 Tokyo Electron Limited Method and system for treating a dielectric film
JP4464125B2 (ja) * 2003-12-22 2010-05-19 ソニー株式会社 構造体の作製方法及びシリコン酸化膜エッチング剤
US20060135047A1 (en) * 2004-12-22 2006-06-22 Alexei Sheydayi Method and apparatus for clamping a substrate in a high pressure processing system
JP2006319207A (ja) * 2005-05-13 2006-11-24 Horiba Stec Co Ltd 流量制御装置、薄膜堆積装置および流量制御方法
JP2007234862A (ja) * 2006-03-01 2007-09-13 Dainippon Screen Mfg Co Ltd 高圧処理装置および高圧処理方法
JP2008182034A (ja) * 2007-01-24 2008-08-07 Sony Corp 基体処理方法及び基体処理装置
JP7197396B2 (ja) * 2019-02-06 2022-12-27 東京エレクトロン株式会社 基板処理装置及び基板処理方法
KR102262250B1 (ko) * 2019-10-02 2021-06-09 세메스 주식회사 기판 처리 설비 및 기판 처리 방법

Also Published As

Publication number Publication date
WO2023013435A1 (ja) 2023-02-09
KR20240038070A (ko) 2024-03-22
CN117716476A (zh) 2024-03-15
TW202325416A (zh) 2023-07-01

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Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240125

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20240125