Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
  • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L24/02—Bonding areas ; Manufacturing methods related thereto
  • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
  • H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
  • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L24/02—Bonding areas ; Manufacturing methods related thereto
  • H01L24/07—Structure, shape, material or disposition of the bonding areas after the connecting process
  • H01L24/08—Structure, shape, material or disposition of the bonding areas after the connecting process of an individual bonding area
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
  • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
  • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
  • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
  • H01L25/0655—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next to each other
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
  • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
  • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
  • H01L29/76—Unipolar devices, e.g. field effect transistors
  • H01L29/772—Field effect transistors
  • H01L29/78—Field effect transistors with field effect produced by an insulated gate
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
  • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
  • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
  • H01L29/76—Unipolar devices, e.g. field effect transistors
  • H01L29/772—Field effect transistors
  • H01L29/78—Field effect transistors with field effect produced by an insulated gate
  • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
  • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
  • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L2224/02—Bonding areas; Manufacturing methods related thereto
  • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
  • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
  • H01L2224/061—Disposition
  • H01L2224/0612—Layout
  • H01L2224/0615—Mirror array, i.e. array having only a reflection symmetry, i.e. bilateral symmetry
  • H01L2224/06152—Mirror array, i.e. array having only a reflection symmetry, i.e. bilateral symmetry being non uniform, i.e. having a non uniform pitch across the array
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L2224/02—Bonding areas; Manufacturing methods related thereto
  • H01L2224/07—Structure, shape, material or disposition of the bonding areas after the connecting process
  • H01L2224/08—Structure, shape, material or disposition of the bonding areas after the connecting process of an individual bonding area
  • H01L2224/081—Disposition
  • H01L2224/0812—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
  • H01L2224/08151—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
  • H01L2224/08221—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
  • H01L2224/08225—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

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• Engineering & Computer Science (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Computer Hardware Design (AREA)
• Physics & Mathematics (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Ceramic Engineering (AREA)
• Semiconductor Integrated Circuits (AREA)
• Geometry (AREA)
• Wire Bonding (AREA)
• Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

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• 2022
  • 2022-02-10 KR KR1020237007843A patent/KR102629278B1/ko active IP Right Grant
  • 2022-02-10 JP JP2022529718A patent/JP7100219B1/ja active Active
  • 2022-02-10 CN CN202280006391.0A patent/CN116250088A/zh active Pending
  • 2022-02-10 US US18/044,746 patent/US20230307393A1/en active Pending
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• 2023
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