JPWO2019117259A1 - 実装構造体の製造方法 - Google Patents
実装構造体の製造方法 Download PDFInfo
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- JPWO2019117259A1 JPWO2019117259A1 JP2019559208A JP2019559208A JPWO2019117259A1 JP WO2019117259 A1 JPWO2019117259 A1 JP WO2019117259A1 JP 2019559208 A JP2019559208 A JP 2019559208A JP 2019559208 A JP2019559208 A JP 2019559208A JP WO2019117259 A1 JPWO2019117259 A1 JP WO2019117259A1
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Abstract
Description
熱硬化性シートと熱可塑性シートとを、前記熱可塑性シートと前記第1回路部材との間に前記熱硬化性シートが介在するように前記実装部材に配置する配置工程と、
前記熱硬化性シートと前記熱可塑性シートとの積層体を前記第1回路部材に対して押圧するとともに、前記積層体を加熱して前記第2回路部材を封止し、前記熱硬化性シートを硬化させて第1硬化層に変換する第1封止工程と、
前記第1硬化層から前記熱可塑性シートを除去する除去工程と、
前記除去工程の後、前記第1硬化層上に被膜を形成する被膜形成工程と、を具備し、
複数の前記第2回路部材の少なくとも1つが、前記第1回路部材との間に形成される空間を備える中空部材であり、
前記第1封止工程では、前記空間を維持しながら、複数の前記第2回路部材が封止される、実装構造体の製造方法に関する。
図1〜図10は、それぞれ、本発明の上記局面にかかる製造方法における所定の工程について、実装部材あるいは実装構造体の断面により説明するための模式図である。
本工程では、第1回路部材1と、第1回路部材1に搭載される複数の第2回路部材2と、を備える実装部材を準備する(図1)。
本工程では、熱硬化性シート41Pおよび熱可塑性シート42Pを備えるシート(シート状封止材)4Pを準備する(図1)。図示例では、熱硬化性シート41Pおよび熱可塑性シート42Pが一体化されたシート4Pを準備する場合を示すが、この場合に限らず、熱硬化性シート41Pおよび熱可塑性シート42Pをそれぞれ別に準備してもよい。熱硬化性シート41Pおよび熱可塑性シート42Pを別々に準備する場合には、双方のシートを、後続の配置工程で重ねて積層体としてもよい。この場合でも、第2準備工程において、熱硬化性シート41Pと熱可塑性シート42Pとが一体化していないだけで、各シートの構成、および実装構造体の製造方法の各工程の手順や条件は、一体化されたシート4Pの場合と同様である。
シート4Pは、複数の第2回路部材2を一括して封止する部材である。
シート4Pは、熱硬化性シート41Pおよび熱可塑性シート42Pを後続の配置工程で重ねた状態で用いることができればよく、これらのシート41P,42P以外の他のシート(第3シート)を含むこともできる。
なお、第2回路部材2が封止されるときの温度tとは、内部空間Sが維持された状態で、第2回路部材2の表面がシート4Pによって覆われたときのシート4Pの温度である。
熱硬化性シート41Pを構成する熱硬化性材料の温度tにおける損失正接tanδ1は、例えば、0.1以上0.6以下であり、0.1以上0.4以下であってもよい。また、熱硬化性材料の温度tにおける貯蔵せん断弾性率G1’は、1×104Pa以上1×107Pa以下であってもよく、1×104Pa以上5×106以下(例えば、1×105Pa以上5×106Pa以下)であってもよく、1×104Pa以上1×106Pa以下であってもよい。
熱硬化性シート41Pの体積抵抗率は、例えば、抵抗率計(例えば、(株)三菱化学アナリテック社製、ハイレスタUP)などの市販の装置を用いて測定することができる。
なお、各シート41Pおよび42Pの厚みT1およびT2、並びにシート4Pの厚みは、それぞれ、第1回路部材に対して押圧する前の厚みである。
なお、熱硬化性材料の伸び率とは、熱硬化性シート41Pの場合に準じてシート化された30mm長さ、10mm幅、および100μm厚みの試験片について測定される値である。まず、粘弾性測定装置(例えば、TA Instruments社製、ARES)を用いて、25℃にて、一定Hencky歪モードの条件下、治具(Extensional Viscosity Fixture)を用い、せん断速度0.1s-1で伸び率を測定する。伸び率は、試験片に亀裂が生じたときの試験片の長さL1と初期の試験片の長さL0との差(=L1−L0)のL0に対する比率(=(L1−L0)/L0×100(%))である。複数(例えば、5つ)の試験片について、伸び率を測定し、平均化することにより平均伸び率を求める。
封止前の熱硬化性樹脂は、未硬化状態でもよく、半硬化状態でもよい。半硬化状態とは、熱硬化性樹脂がモノマーおよび/またはオリゴマーを含む状態であり、熱硬化性樹脂の三次元架橋構造の発達が不十分な状態をいう。半硬化状態の熱硬化性樹脂は、室温(25℃)では溶剤に溶解しないが硬化は不完全な状態、いわゆるBステージにある。
本明細書中、活性温度とは、潜在性硬化剤および/または硬化促進剤の作用により、熱硬化性樹脂の硬化が急速に早められる温度である。
また、本明細書中、平均粒子径は、体積基準の粒度分布における累積体積50%における粒子径(D50。以下同じ。)である。
熱可塑性シート42Pと熱硬化性シート41Pとの間には、これらの以外の第3シートが配置されていてもよい。しかし、中空部材の内部空間Sを維持しながら、複数の第2回路部材2を一括して封止し易くなるように、熱可塑性シート42Pと熱硬化性シート41Pとを隣接させることが好ましい。
なお、熱可塑性材料の融点(またはガラス転移温度)tmは、熱可塑性シートの試験片を用いて、昇温速度10℃/分の条件で、示差走査熱量測定法(JIS K7121)により測定される。
シート4P全体の厚みTは特に限定されないが、第2回路部材2の表面に密着させ易い点で、55μm以上1500μm以下であることが好ましく、100μm以上1000μm以下であってよく、100μm以上500μm以下であってよい。
本工程では、熱硬化性シート41Pと熱可塑性シート42Pとを、熱可塑性シート42Pと第1回路部材1との間に熱硬化性シート41Pが介在するように、実装部材に配置する(図2)。このとき、熱硬化性シート41Pと熱可塑性シート42Pとの積層体(シート4Pも含む)が、複数の第2回路部材2を覆うように配置すればよい。
本工程では、熱硬化性シート41Pと熱可塑性シート42Pとの積層体(シート4Pも含む)を第1回路部材1に対して押圧するとともに(図3および図4)、シート4Pを加熱して、第1回路部材1上の第2回路部材2を封止し、熱硬化性シート41Pを硬化させて第1硬化層41に変換する(図5)。これにより、内部空間Sを維持しながら、第2回路部材2が封止される。このように積層体で第2回路部材2を封止する際には、熱可塑性シート42Pも第2回路部材2の形状に追随して変形する(または成形される)。この熱可塑性シート42Pの変形により、熱硬化性シート41Pも第2回路部材2の形状に追随させることができる。よって、熱硬化性シート41Pの硬化により形成される第1硬化層41も、第2回路部材2の形状に対応した凹凸を有する。
また、押圧は、加圧雰囲気(0.1MPaより高い圧力下)で行なってもよく、大気圧下で行ってもよいし、減圧雰囲気(例えば、10Pa以上0.05MPa以下または50Pa以上3kPa以下)で行ってもよい。
本工程では、第1封止工程で熱硬化性シート41Pの硬化により形成された第1硬化層41から、熱可塑性シート42Pを除去する(図6)。これにより、第2回路部材が第1硬化層41で封止された実装構造体10が得られる(図7)。熱可塑性シートの除去手段としては、例えば、溶解による除去であってもよいし、剥離による除去であってもよい。剥離による除去は、化学的な剥離であってもよいし、物理的な剥離であってもよい。また一度目の除去手段で熱可塑性シートの残渣が生じる場合は、別の除去手段により残渣を除去してもよい。なお、図6には、熱可塑性シートを剥離により除去する場合を示した。
熱可塑性シート42Pの剥離は、例えば、熱可塑性シート42Pを構成する熱可塑性材料の融点またはガラス転移温度以下、例えば40℃以下、もしくは室温(具体的には、20℃以上35℃以下)の温度で行なうことが好ましい。このような温度では、熱可塑性シート42Pの粘性が低く、弾性が高い。また、第1封止工程において、熱硬化性シート41Pは硬化して粘着性が低下する。そのため、熱可塑性シート42Pの高い弾性を利用して、第1硬化層41から熱可塑性シート42Pを容易に剥離させることができる。これにより、第1硬化層41の破れも抑制できる。
熱可塑性シートの除去工程の後、必要により、第1硬化層41上に被膜を形成してもよい(図8〜図10)。この工程を被膜形成工程と称する。被膜は、導電性、放熱性、電磁波遮蔽性、および/または電磁波吸収性などの機能性を有する層(機能層)を含んでもよい。中でも、導電性、電磁波遮蔽性、および/または電磁波吸収性などの機能を有する機能層を被膜が含む場合、外部から侵入しようとする電磁波をシールドすることができ、回路部材間の電気的な干渉を抑制できる。また、機能層は、必要な部分にのみ形成することもできるため、回路部材間の電気的な干渉を効果的に解消することができる。
以下、本発明を実施例および参考例に基づいて具体的に説明するが、本発明は以下の実施例に限定されるものではない。
ガラスエポキシ基板(第1回路部材、50mm角、厚み0.2mm)に、4つの同型のSAWチップA,B,C,D(第2回路部材、1.1mm×1.1mm、高さ0.2mm)を、金バンプ(直径100μm、高さ20μm)を介し、並べて搭載することにより実装部材を得た。SAWチップAとBとの間の離間距離D1は0.4mmであり、SAWチップBとCとの間の離間距離D2は0.1mmであり、SAWチップCとDとの間の離間距離D3は0.2mmであった。得られた実装部材を積層シート(熱硬化性シート(第1層)と熱可塑性シート(第2層)との積層体)で封止した。封止工程では、積層シートを熱硬化性シート(第1層)の面が第2回路部材側に接するよう配置し、積層シートを120℃(封止温度)で加熱しながら、減圧雰囲気下(200Pa)で1分間加圧した。その後、150℃、1atm(≒0.1MPa)、180分間の条件でオーブン内にて加熱後、室温まで冷却してから熱可塑性シート(第2層)を剥離し、実装構造体を得た。
エポキシ樹脂(熱硬化性樹脂):100部
フェノールノボラック(硬化剤):60部
アクリル樹脂(熱可塑性樹脂):60部
溶融球状シリカ(無機充填剤):100部
イミダゾール(硬化促進剤):2部
積層シートとして、いずれも熱硬化性の第1層および第2層を有する積層体を用いるとともに、冷却後に剥離を行わないこと以外は、実施例1と同様に実装構造体を得た。積層シートとしては、実施例1で用いた熱硬化性シート(厚み12μm)を第1層とし、第2層としては、表1に示す成分を表1に示す比率で含む樹脂組成物を用いて、コーティング法により作製した熱硬化性シート(厚み250μm)を用いた。双方の熱硬化性シートを重ね合わせて、実施例1の場合と同様に熱ラミネートすることにより積層シートを形成した。なお、参考例1で用いたフェノキシ樹脂は、熱可塑性樹脂である。各シートを構成する材料について、それぞれ既述の手順で、物性値を測定した。
実施例および参考例について下記の評価を行った。
(1)封止性
実装構造体について、SAWチップの離間距離D1、D2およびD3のそれぞれの部分について、チップ下(基板裏)から中空封止状態を確認し、中空封止性を下記の基準で評価した。
A:未充填によるボイドや樹脂進入がなく、中空封止性が十分であった。
B:樹脂侵入はないが、一部に、未充填によるごく小さなボイドが見られた。
C:チップ下に樹脂が侵入していた。
D:樹脂の未充填による大きなボイドが発生していた。
第2層を剥離した後の、実装構造体の第1硬化層(第1層)の表面(剥離後の封止材表面)を観察し、下記の基準で第2層の剥離性(除去性)を評価した。
A:第1層の表面から第2層が残らず除去できた。
B:第1層から第2層の剥離を試みたが、剥離できなかった。
1:第1回路部材
2:第2回路部材
21:基準部材
22:第1の隣接部材
23:第2の隣接部材
3:第1バンプ
S:内部空間
4P:シート
41P:熱硬化性シート
42P:熱可塑性シート
41:熱硬化性シートの硬化物(封止材)(第1硬化層)
50,250:第2硬化性材料の硬化物(第2硬化層)
260:電磁波遮蔽層
Claims (15)
- 第1回路部材と、前記第1回路部材に搭載される複数の第2回路部材と、を備える実装部材を準備する工程と、
熱硬化性シートと熱可塑性シートとを、前記熱可塑性シートと前記第1回路部材との間に前記熱硬化性シートが介在するように前記実装部材に配置する配置工程と、
前記熱硬化性シートと前記熱可塑性シートとの積層体を前記第1回路部材に対して押圧するとともに、前記積層体を加熱して前記第2回路部材を封止し、前記熱硬化性シートを硬化させて第1硬化層に変換する第1封止工程と、
前記第1硬化層から前記熱可塑性シートを除去する除去工程と、
前記除去工程の後、前記第1硬化層上に被膜を形成する被膜形成工程と、を具備し、
複数の前記第2回路部材の少なくとも1つが、前記第1回路部材との間に形成される空間を備える中空部材であり、
前記第1封止工程では、前記空間を維持しながら、複数の前記第2回路部材が封止される、実装構造体の製造方法。 - 前記被膜は、導電性、電磁波遮蔽性、および電磁波吸収性からなる群より選択される少なくとも1つの機能を有する機能層を含み、
前記被膜形成工程は、前記第1硬化層上に前記機能層を形成する工程を含む、請求項1に記載の実装構造体の製造方法。 - 前記機能層は、導電性材料を含み、気相法および/またはめっき法により形成される、請求項2に記載の実装構造体の製造方法。
- 前記被膜は、さらに第2硬化層を含み、
前記被膜形成工程は、さらに前記機能層上において硬化性材料を硬化させることにより前記第2硬化層を形成する第2封止工程を含む、請求項2または3に記載の実装構造体の製造方法。 - 前記被膜は、第2硬化層を含み、
前記被膜形成工程は、前記第1硬化層上に硬化性材料を充填して硬化させることにより前記第2硬化層を形成する第2封止工程を含む、請求項1に記載の実装構造体の製造方法。 - 前記配置工程に先立って、前記熱硬化性シートと前記熱可塑性シートとが一体化されたシートを準備する工程を備え、
前記配置工程において、前記シートを前記実装部材に配置する、請求項1〜5のいずれか1項に記載の実装構造体の製造方法。 - 前記第1封止工程において、加熱下で、前記積層体が前記第1回路部材に対して押圧される、請求項1〜6のいずれか1項に記載の実装構造体の製造方法。
- 前記熱可塑性シートを構成する熱可塑性材料は、前記熱可塑性材料で形成された厚み100μmのシートについて測定される50%モジュラスが、3MPa以上8MPa以下であり、破断伸度が、200%以上1000%以下であり、破断強度が、10MPa以上30MPa以下である、請求項1〜7のいずれか1項に記載の実装構造体の製造方法。
- 前記熱可塑性シートを構成する熱可塑性材料の融点またはガラス転移温度tmは、50℃以上130℃以下であり、かつ前記第2回路部材が封止されるときの温度tよりも低い、請求項1〜8のいずれか1項に記載の実装構造体の製造方法。
- 前記第2回路部材が封止されるときの温度tにおいて、前記熱硬化性シートを構成する熱硬化性材料は、0.1以上0.8以下の損失正接tanδ、および1×104Pa以上1×107Pa以下の貯蔵せん断弾性率を示す、請求項1〜9のいずれか1項に記載の実装構造体の製造方法。
- 互いに隣接する第2回路部材の離間距離が150μm以下である第2回路部材を少なくとも1つ備える、請求項1〜10のいずれか1項に記載の実装構造体の製造方法。
- 前記第2回路部材は、基準部材と、前記基準部材にそれぞれ隣接する第1の隣接部材および第2の隣接部材と、を備え、
前記基準部材と前記第1の隣接部材との間の離間距離D1と、前記基準部材と前記第2の隣接部材との間の離間距離D2とは、異なる、請求項1〜11のいずれか1項に記載の実装構造体の製造方法。 - 前記第2回路部材は、基準部材と、前記基準部材にそれぞれ隣接する第1の隣接部材および第2の隣接部材と、を備え、
前記第1の隣接部材の前記基準部材からの高さΔH1と、前記第2の隣接部材の前記基準部材からの高さΔH2とは、異なる、請求項1〜12のいずれか1項に記載の実装構造体の製造方法。 - 前記第1封止工程において、前記積層体で前記第2回路部材を封止するとともに、前記第2回路部材の形状に追随させて前記熱可塑性シートを変形させる、請求項1〜13のいずれか1項に記載の実装構造体の製造方法。
- 前記第1硬化層は、前記第2回路部材の形状に対応した凹凸を有する、請求項1〜14のいずれか1項に記載の実装構造体の製造方法。
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Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004327623A (ja) * | 2003-04-23 | 2004-11-18 | Three M Innovative Properties Co | 封止用フィルム接着剤、封止用フィルム積層体及び封止方法 |
JP2008098419A (ja) * | 2006-10-12 | 2008-04-24 | Hitachi Chem Co Ltd | 封止フィルム、及びこれを用いた半導体装置 |
JP2015053470A (ja) * | 2013-08-07 | 2015-03-19 | 日東電工株式会社 | 中空型電子デバイス封止用樹脂シート及び中空型電子デバイスパッケージの製造方法 |
JP2015106573A (ja) * | 2013-11-28 | 2015-06-08 | 日東電工株式会社 | 中空封止用樹脂シート、及び、中空パッケージの製造方法 |
JP2015179814A (ja) * | 2013-11-28 | 2015-10-08 | 日東電工株式会社 | 封止用熱硬化性樹脂シート及び中空パッケージの製造方法 |
JP2015221499A (ja) * | 2014-05-22 | 2015-12-10 | ナガセケムテックス株式会社 | 積層シートおよびその製造方法ならびに積層シートを用いて封止された実装構造体およびその製造方法 |
JP2017092103A (ja) * | 2015-11-04 | 2017-05-25 | 日東電工株式会社 | 中空型電子デバイス封止用シート、及び、中空型電子デバイスパッケージの製造方法 |
JP2017108183A (ja) * | 2017-03-13 | 2017-06-15 | ナガセケムテックス株式会社 | 中空構造電子部品 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4089721A (en) * | 1977-03-24 | 1978-05-16 | Sauder Woodworking Co. | Method of making a laminate |
JPH0961456A (ja) | 1995-08-29 | 1997-03-07 | Murata Mfg Co Ltd | 半導体装置 |
JP2002184884A (ja) | 2000-12-18 | 2002-06-28 | Tdk Corp | 電子装置およびその製造方法 |
DE10238523B4 (de) | 2002-08-22 | 2014-10-02 | Epcos Ag | Verkapseltes elektronisches Bauelement und Verfahren zur Herstellung |
JP2004273853A (ja) * | 2003-03-10 | 2004-09-30 | Matsushita Electric Ind Co Ltd | 樹脂層付チップ部品とそれを用いた部品内蔵モジュール及びそれらの製造方法 |
KR101250677B1 (ko) | 2011-09-30 | 2013-04-03 | 삼성전기주식회사 | 반도체 패키지 및 그의 제조 방법 |
JP6119950B2 (ja) | 2011-12-02 | 2017-04-26 | ナガセケムテックス株式会社 | 中空構造電子部品 |
JP6263846B2 (ja) * | 2012-08-16 | 2018-01-24 | 住友ベークライト株式会社 | 電磁波シールド用フィルム、および電子部品の被覆方法 |
JP5735036B2 (ja) * | 2013-05-23 | 2015-06-17 | 日東電工株式会社 | 電子部品装置の製造方法、及び、積層シート |
US20150235871A1 (en) * | 2014-02-18 | 2015-08-20 | Shin-Etsu Chemical Co., Ltd. | Vacuum laminating apparatus and method for manufacturing semiconductor apparatus |
JP6318836B2 (ja) * | 2014-05-15 | 2018-05-09 | 三菱ケミカル株式会社 | 転写用基材及び転写シート |
KR102375044B1 (ko) | 2015-01-16 | 2022-03-15 | 쇼와덴코머티리얼즈가부시끼가이샤 | 열경화성 수지 조성물, 층간 절연용 수지 필름, 복합 필름, 프린트 배선판 및 그의 제조 방법 |
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Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004327623A (ja) * | 2003-04-23 | 2004-11-18 | Three M Innovative Properties Co | 封止用フィルム接着剤、封止用フィルム積層体及び封止方法 |
JP2008098419A (ja) * | 2006-10-12 | 2008-04-24 | Hitachi Chem Co Ltd | 封止フィルム、及びこれを用いた半導体装置 |
JP2015053470A (ja) * | 2013-08-07 | 2015-03-19 | 日東電工株式会社 | 中空型電子デバイス封止用樹脂シート及び中空型電子デバイスパッケージの製造方法 |
JP2015106573A (ja) * | 2013-11-28 | 2015-06-08 | 日東電工株式会社 | 中空封止用樹脂シート、及び、中空パッケージの製造方法 |
JP2015179814A (ja) * | 2013-11-28 | 2015-10-08 | 日東電工株式会社 | 封止用熱硬化性樹脂シート及び中空パッケージの製造方法 |
JP2015221499A (ja) * | 2014-05-22 | 2015-12-10 | ナガセケムテックス株式会社 | 積層シートおよびその製造方法ならびに積層シートを用いて封止された実装構造体およびその製造方法 |
JP2017092103A (ja) * | 2015-11-04 | 2017-05-25 | 日東電工株式会社 | 中空型電子デバイス封止用シート、及び、中空型電子デバイスパッケージの製造方法 |
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US20200388509A1 (en) | 2020-12-10 |
TWI770330B (zh) | 2022-07-11 |
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EP3726571A1 (en) | 2020-10-21 |
US11710645B2 (en) | 2023-07-25 |
SG11202005448UA (en) | 2020-07-29 |
JP6718106B2 (ja) | 2020-07-08 |
SG11202005449YA (en) | 2020-07-29 |
CN111466021A (zh) | 2020-07-28 |
JPWO2019117258A1 (ja) | 2020-07-30 |
JP6718105B2 (ja) | 2020-07-08 |
EP3726571A4 (en) | 2021-09-08 |
TW201929627A (zh) | 2019-07-16 |
WO2019117258A1 (ja) | 2019-06-20 |
KR102525372B1 (ko) | 2023-04-26 |
TWI783097B (zh) | 2022-11-11 |
US20210084775A1 (en) | 2021-03-18 |
CN111480227A (zh) | 2020-07-31 |
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