JPWO2018124226A1 - 研磨用組成物及び研磨方法 - Google Patents
研磨用組成物及び研磨方法 Download PDFInfo
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- JPWO2018124226A1 JPWO2018124226A1 JP2018559608A JP2018559608A JPWO2018124226A1 JP WO2018124226 A1 JPWO2018124226 A1 JP WO2018124226A1 JP 2018559608 A JP2018559608 A JP 2018559608A JP 2018559608 A JP2018559608 A JP 2018559608A JP WO2018124226 A1 JPWO2018124226 A1 JP WO2018124226A1
- Authority
- JP
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- Prior art keywords
- polishing
- polishing composition
- mass
- polyoxyalkylene
- inorganic alkali
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 238000005498 polishing Methods 0.000 title claims abstract description 131
- 239000000203 mixture Substances 0.000 title claims abstract description 79
- 238000000034 method Methods 0.000 title claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 29
- -1 alkali metal salt Chemical class 0.000 claims abstract description 26
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims abstract description 25
- 150000001875 compounds Chemical class 0.000 claims abstract description 25
- 239000003513 alkali Substances 0.000 claims abstract description 24
- 150000005215 alkyl ethers Chemical class 0.000 claims abstract description 21
- HOVAGTYPODGVJG-UVSYOFPXSA-N (3s,5r)-2-(hydroxymethyl)-6-methoxyoxane-3,4,5-triol Chemical compound COC1OC(CO)[C@@H](O)C(O)[C@H]1O HOVAGTYPODGVJG-UVSYOFPXSA-N 0.000 claims abstract description 14
- HOVAGTYPODGVJG-UHFFFAOYSA-N methyl beta-galactoside Natural products COC1OC(CO)C(O)C(O)C1O HOVAGTYPODGVJG-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052783 alkali metal Inorganic materials 0.000 claims abstract description 4
- 150000008044 alkali metal hydroxides Chemical class 0.000 claims abstract description 4
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims abstract description 4
- 229910001860 alkaline earth metal hydroxide Inorganic materials 0.000 claims abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 claims description 8
- 230000007547 defect Effects 0.000 abstract description 20
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 30
- 230000000052 comparative effect Effects 0.000 description 25
- 239000004354 Hydroxyethyl cellulose Substances 0.000 description 11
- 229920000663 Hydroxyethyl cellulose Polymers 0.000 description 11
- 235000019447 hydroxyethyl cellulose Nutrition 0.000 description 11
- 150000007514 bases Chemical class 0.000 description 10
- 229920001451 polypropylene glycol Polymers 0.000 description 10
- 235000011118 potassium hydroxide Nutrition 0.000 description 10
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- 229920003169 water-soluble polymer Polymers 0.000 description 9
- 239000011362 coarse particle Substances 0.000 description 8
- 239000008119 colloidal silica Substances 0.000 description 8
- 239000002245 particle Substances 0.000 description 8
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 8
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonium chloride Substances [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 6
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 6
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- 235000011114 ammonium hydroxide Nutrition 0.000 description 6
- 229920000223 polyglycerol Polymers 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 239000006061 abrasive grain Substances 0.000 description 4
- 239000002612 dispersion medium Substances 0.000 description 4
- 239000006260 foam Substances 0.000 description 4
- 229910000027 potassium carbonate Inorganic materials 0.000 description 4
- 235000011181 potassium carbonates Nutrition 0.000 description 4
- 238000004220 aggregation Methods 0.000 description 3
- 230000002776 aggregation Effects 0.000 description 3
- 238000013329 compounding Methods 0.000 description 3
- GPLRAVKSCUXZTP-UHFFFAOYSA-N diglycerol Chemical compound OCC(O)COCC(O)CO GPLRAVKSCUXZTP-UHFFFAOYSA-N 0.000 description 3
- 229920002503 polyoxyethylene-polyoxypropylene Polymers 0.000 description 3
- 229910000029 sodium carbonate Inorganic materials 0.000 description 3
- 235000017550 sodium carbonate Nutrition 0.000 description 3
- 235000011121 sodium hydroxide Nutrition 0.000 description 3
- FBPFZTCFMRRESA-JGWLITMVSA-N D-glucitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-JGWLITMVSA-N 0.000 description 2
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 2
- 125000002947 alkylene group Chemical group 0.000 description 2
- 229920002678 cellulose Polymers 0.000 description 2
- 239000001913 cellulose Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229930182478 glucoside Natural products 0.000 description 2
- 150000008131 glucosides Chemical class 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- RYCLIXPGLDDLTM-UHFFFAOYSA-J tetrapotassium;phosphonato phosphate Chemical compound [K+].[K+].[K+].[K+].[O-]P([O-])(=O)OP([O-])([O-])=O RYCLIXPGLDDLTM-UHFFFAOYSA-J 0.000 description 2
- FBPFZTCFMRRESA-FSIIMWSLSA-N D-Glucitol Natural products OC[C@H](O)[C@H](O)[C@@H](O)[C@H](O)CO FBPFZTCFMRRESA-FSIIMWSLSA-N 0.000 description 1
- UIIMBOGNXHQVGW-DEQYMQKBSA-M Sodium bicarbonate-14C Chemical compound [Na+].O[14C]([O-])=O UIIMBOGNXHQVGW-DEQYMQKBSA-M 0.000 description 1
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 1
- 229910021538 borax Inorganic materials 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000004691 decahydrates Chemical class 0.000 description 1
- 239000000412 dendrimer Substances 0.000 description 1
- 229920000736 dendritic polymer Polymers 0.000 description 1
- 150000005690 diesters Chemical class 0.000 description 1
- UQGFMSUEHSUPRD-UHFFFAOYSA-N disodium;3,7-dioxido-2,4,6,8,9-pentaoxa-1,3,5,7-tetraborabicyclo[3.3.1]nonane Chemical compound [Na+].[Na+].O1B([O-])OB2OB([O-])OB1O2 UQGFMSUEHSUPRD-UHFFFAOYSA-N 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000007518 final polishing process Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000003002 pH adjusting agent Substances 0.000 description 1
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000011736 potassium bicarbonate Substances 0.000 description 1
- 235000015497 potassium bicarbonate Nutrition 0.000 description 1
- 229910000028 potassium bicarbonate Inorganic materials 0.000 description 1
- TYJJADVDDVDEDZ-UHFFFAOYSA-M potassium hydrogencarbonate Chemical compound [K+].OC([O-])=O TYJJADVDDVDEDZ-UHFFFAOYSA-M 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 239000011163 secondary particle Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000004328 sodium tetraborate Substances 0.000 description 1
- 235000010339 sodium tetraborate Nutrition 0.000 description 1
- 239000000600 sorbitol Substances 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
表1に示す実施例1〜4、及び比較例1〜12の研磨用組成物を作製した。
表3に示す実施例1、3〜16、比較例1、12、13の研磨用組成物を作成した。なお、研磨例1と対比しやすくするため、同じ配合のものには同じ実施例・比較例の番号を付した(実施例1、3、4、比較例1、8、12)。
Claims (4)
- シリカ粒子と、
無機アルカリ化合物と、
ポリグリセリンと、
多鎖型のポリオキシアルキレンアルキルエーテルとを含む、研磨用組成物。 - 請求項1に記載の研磨用組成物であって、
前記多鎖型のポリオキシアルキレンアルキルエーテルは、ポリオキシアルキレンメチルグルコシド及びポリオキシアルキレンポリグリセリルエーテルから選ばれる少なくとも一種である、研磨用組成物。 - 請求項1又は2に記載の研磨用組成物であって、
前記無機アルカリ化合物は、アルカリ金属の水酸化物、アルカリ金属の塩、アルカリ土類金属の水酸化物、アルカリ土類金属の塩から選ばれる少なくとも一種である、研磨用組成物。 - 請求項1〜3のいずれか一項に記載の研磨用組成物と、硬度が80以下である発泡ウレタンパッドを用いて、シリコンウェーハを仕上げ研磨する工程を含む、シリコンウェーハの研磨方法。
Applications Claiming Priority (3)
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JP2016255136 | 2016-12-28 | ||
JP2016255136 | 2016-12-28 | ||
PCT/JP2017/047077 WO2018124226A1 (ja) | 2016-12-28 | 2017-12-27 | 研磨用組成物及び研磨方法 |
Publications (2)
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JPWO2018124226A1 true JPWO2018124226A1 (ja) | 2019-10-31 |
JP7061968B2 JP7061968B2 (ja) | 2022-05-02 |
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Country Status (5)
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---|---|
JP (1) | JP7061968B2 (ja) |
KR (1) | KR102508181B1 (ja) |
CN (1) | CN110023449B (ja) |
TW (1) | TWI753984B (ja) |
WO (1) | WO2018124226A1 (ja) |
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JP7158280B2 (ja) * | 2018-12-28 | 2022-10-21 | ニッタ・デュポン株式会社 | 半導体研磨用組成物 |
JPWO2021199723A1 (ja) * | 2020-03-31 | 2021-10-07 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013157442A1 (ja) * | 2012-04-18 | 2013-10-24 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
JP2014187268A (ja) * | 2013-03-25 | 2014-10-02 | Hitachi Chemical Co Ltd | Cmp研磨剤及び基板の研磨方法 |
JP2015109423A (ja) * | 2013-10-25 | 2015-06-11 | 花王株式会社 | シリコンウェーハ用研磨液組成物 |
Family Cites Families (13)
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CN101153206A (zh) * | 2006-09-29 | 2008-04-02 | 安集微电子(上海)有限公司 | 用于抛光多晶硅的化学机械抛光液 |
KR101488444B1 (ko) * | 2007-09-28 | 2015-01-30 | 니타 하스 인코포레이티드 | 연마조성물 |
JP2009099819A (ja) * | 2007-10-18 | 2009-05-07 | Daicel Chem Ind Ltd | Cmp用研磨組成物及び該cmp用研磨組成物を使用したデバイスウェハの製造方法 |
WO2012172983A1 (ja) * | 2011-06-14 | 2012-12-20 | 株式会社 フジミインコーポレーテッド | 研磨用組成物 |
US9346977B2 (en) * | 2012-02-21 | 2016-05-24 | Hitachi Chemical Company, Ltd. | Abrasive, abrasive set, and method for abrading substrate |
JP2015088495A (ja) * | 2012-02-21 | 2015-05-07 | 日立化成株式会社 | 研磨剤、研磨剤セット及び基体の研磨方法 |
SG11201407916RA (en) * | 2012-05-25 | 2015-03-30 | Nissan Chemical Ind Ltd | Polishing solution composition for wafers |
SG11201501334RA (en) * | 2012-08-30 | 2015-05-28 | Hitachi Chemical Co Ltd | Polishing agent, polishing agent set and method for polishing base |
JP6343160B2 (ja) * | 2014-03-28 | 2018-06-13 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
WO2016031485A1 (ja) * | 2014-08-29 | 2016-03-03 | 株式会社フジミインコーポレーテッド | 研磨用組成物および研磨用組成物の製造方法 |
JP6559936B2 (ja) * | 2014-09-05 | 2019-08-14 | 日本キャボット・マイクロエレクトロニクス株式会社 | スラリー組成物、リンス組成物、基板研磨方法およびリンス方法 |
US10946494B2 (en) * | 2015-03-10 | 2021-03-16 | Showa Denko Materials Co., Ltd. | Polishing agent, stock solution for polishing agent, and polishing method |
CN105950115A (zh) * | 2016-05-13 | 2016-09-21 | 盐城工学院 | 一种适用于氧化镓衬底的环保研磨膏及其制备方法 |
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2017
- 2017-12-27 KR KR1020197018210A patent/KR102508181B1/ko active IP Right Grant
- 2017-12-27 JP JP2018559608A patent/JP7061968B2/ja active Active
- 2017-12-27 CN CN201780074856.5A patent/CN110023449B/zh active Active
- 2017-12-27 WO PCT/JP2017/047077 patent/WO2018124226A1/ja active Application Filing
- 2017-12-28 TW TW106146204A patent/TWI753984B/zh active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013157442A1 (ja) * | 2012-04-18 | 2013-10-24 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
JP2014187268A (ja) * | 2013-03-25 | 2014-10-02 | Hitachi Chemical Co Ltd | Cmp研磨剤及び基板の研磨方法 |
JP2015109423A (ja) * | 2013-10-25 | 2015-06-11 | 花王株式会社 | シリコンウェーハ用研磨液組成物 |
Also Published As
Publication number | Publication date |
---|---|
TW201831645A (zh) | 2018-09-01 |
KR102508181B1 (ko) | 2023-03-09 |
TWI753984B (zh) | 2022-02-01 |
WO2018124226A1 (ja) | 2018-07-05 |
CN110023449A (zh) | 2019-07-16 |
CN110023449B (zh) | 2021-08-17 |
KR20190098152A (ko) | 2019-08-21 |
JP7061968B2 (ja) | 2022-05-02 |
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