SG11201407916RA - Polishing solution composition for wafers - Google Patents

Polishing solution composition for wafers

Info

Publication number
SG11201407916RA
SG11201407916RA SG11201407916RA SG11201407916RA SG11201407916RA SG 11201407916R A SG11201407916R A SG 11201407916RA SG 11201407916R A SG11201407916R A SG 11201407916RA SG 11201407916R A SG11201407916R A SG 11201407916RA SG 11201407916R A SG11201407916R A SG 11201407916RA
Authority
SG
Singapore
Prior art keywords
wafers
solution composition
polishing solution
polishing
composition
Prior art date
Application number
SG11201407916RA
Inventor
Hiroaki Sakaida
Eiichirou Ishimizu
Original Assignee
Nissan Chemical Ind Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Chemical Ind Ltd filed Critical Nissan Chemical Ind Ltd
Publication of SG11201407916RA publication Critical patent/SG11201407916RA/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463Aqueous liquid suspensions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002Preparing wafers
    • H01L21/02005Preparing bulk and homogeneous wafers
    • H01L21/02008Multistep processes
    • H01L21/0201Specific process step
    • H01L21/02024Mirror polishing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG11201407916RA 2012-05-25 2013-05-21 Polishing solution composition for wafers SG11201407916RA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012120037 2012-05-25
PCT/JP2013/064068 WO2013176122A1 (en) 2012-05-25 2013-05-21 Polishing solution composition for wafers

Publications (1)

Publication Number Publication Date
SG11201407916RA true SG11201407916RA (en) 2015-03-30

Family

ID=49623811

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201407916RA SG11201407916RA (en) 2012-05-25 2013-05-21 Polishing solution composition for wafers

Country Status (9)

Country Link
US (1) US9133366B2 (en)
EP (1) EP2858096B1 (en)
JP (1) JP6028942B2 (en)
KR (1) KR102123906B1 (en)
CN (1) CN104321850B (en)
MY (1) MY171383A (en)
SG (1) SG11201407916RA (en)
TW (1) TWI557219B (en)
WO (1) WO2013176122A1 (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG11201507438YA (en) 2013-03-19 2015-10-29 Fujimi Inc Polishing composition, method for producing polishing composition and polishing composition preparation kit
US10717899B2 (en) 2013-03-19 2020-07-21 Fujimi Incorporated Polishing composition, method for producing polishing composition and polishing composition preparation kit
JP5857310B2 (en) 2013-09-30 2016-02-10 株式会社フジミインコーポレーテッド Polishing composition and method for producing the same
JP6246638B2 (en) * 2014-03-24 2017-12-13 株式会社フジミインコーポレーテッド Polishing method and polishing composition used therefor
JP6506913B2 (en) * 2014-03-31 2019-04-24 ニッタ・ハース株式会社 Polishing composition and polishing method
JP6559936B2 (en) * 2014-09-05 2019-08-14 日本キャボット・マイクロエレクトロニクス株式会社 Slurry composition, rinse composition, substrate polishing method and rinse method
JP6356164B2 (en) * 2016-01-15 2018-07-11 関西ペイント株式会社 Conductive paste for lithium ion battery positive electrode and composite paste for lithium ion battery positive electrode
JP6832341B2 (en) * 2016-03-30 2021-02-24 株式会社フジミインコーポレーテッド Surface treatment composition, manufacturing method of surface treatment composition, surface treatment method and manufacturing method of semiconductor substrate
KR102508181B1 (en) * 2016-12-28 2023-03-09 니타 듀퐁 가부시키가이샤 Polishing composition and polishing method
JP7450532B2 (en) * 2018-03-30 2024-03-15 株式会社フジミインコーポレーテッド polishing composition
JP7361467B2 (en) * 2018-12-25 2023-10-16 ニッタ・デュポン株式会社 polishing composition
US11702570B2 (en) * 2019-03-27 2023-07-18 Fujimi Incorporated Polishing composition
JP7267893B2 (en) * 2019-03-27 2023-05-02 株式会社フジミインコーポレーテッド Polishing composition
JP7433042B2 (en) * 2019-12-24 2024-02-19 ニッタ・デュポン株式会社 polishing composition
CN115895451A (en) * 2021-09-30 2023-04-04 昆山欣谷微电子材料有限公司 Alkaline polishing solution composition for preparing hydrophilic surface silicon wafer
TW202334338A (en) * 2021-10-14 2023-09-01 日商日產化學股份有限公司 Composition for post-polishing to be used after primary polishing of silicon wafers
CN115662877B (en) * 2022-09-08 2023-08-04 东海县太阳光新能源有限公司 Monocrystalline silicon surface cleaning method

Family Cites Families (23)

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Publication number Priority date Publication date Assignee Title
JPH11140427A (en) 1997-11-13 1999-05-25 Kobe Steel Ltd Polishing liquid and polishing
JP4462593B2 (en) 2001-07-26 2010-05-12 花王株式会社 Polishing liquid composition
MY144587A (en) 2001-06-21 2011-10-14 Kao Corp Polishing composition
JP4593064B2 (en) * 2002-09-30 2010-12-08 株式会社フジミインコーポレーテッド Polishing composition and polishing method using the same
US7553345B2 (en) 2002-12-26 2009-06-30 Kao Corporation Polishing composition
JP4076853B2 (en) 2002-12-26 2008-04-16 花王株式会社 Polishing liquid composition
JP2005097445A (en) * 2003-09-25 2005-04-14 Yasuhiro Tani Carrier particle for abrasive, abrasive and polishing method
JP2005268665A (en) * 2004-03-19 2005-09-29 Fujimi Inc Polishing composition
US7052373B1 (en) * 2005-01-19 2006-05-30 Anji Microelectronics Co., Ltd. Systems and slurries for chemical mechanical polishing
WO2006080796A1 (en) * 2005-01-26 2006-08-03 Lg Chem, Ltd. Cerium oxide abrasive and slurry containing the same
US7368388B2 (en) * 2005-04-15 2008-05-06 Small Robert J Cerium oxide abrasives for chemical mechanical polishing
JP5335183B2 (en) * 2006-08-24 2013-11-06 株式会社フジミインコーポレーテッド Polishing composition and polishing method
KR101184731B1 (en) * 2008-03-20 2012-09-20 주식회사 엘지화학 Method for preparing cerium oxide, cerium oxide prepared therefrom and cmp slurry comprising the same
JP5575735B2 (en) * 2008-07-03 2014-08-20 株式会社フジミインコーポレーテッド Polishing composition concentrate
JP5474400B2 (en) * 2008-07-03 2014-04-16 株式会社フジミインコーポレーテッド Semiconductor wetting agent, polishing composition and polishing method using the same
WO2010086893A1 (en) 2009-01-27 2010-08-05 三洋化成工業株式会社 Cleaning agent for copper-wired semiconductor
US8728341B2 (en) * 2009-10-22 2014-05-20 Hitachi Chemical Company, Ltd. Polishing agent, concentrated one-pack type polishing agent, two-pack type polishing agent and method for polishing substrate
KR101075966B1 (en) * 2010-03-09 2011-10-21 주식회사 엘지화학 Crystalline cerium oxide and preparation method of the same
CN107474799B (en) * 2010-03-12 2020-12-29 昭和电工材料株式会社 Suspension, polishing liquid set, polishing liquid, and method for polishing substrate using same
KR101728200B1 (en) * 2010-09-27 2017-04-18 가부시키가이샤 후지미인코퍼레이티드 Surface treatment composition and surface treatment method using same
JP2012079964A (en) * 2010-10-04 2012-04-19 Nissan Chem Ind Ltd Polishing liquid composition for semiconductor wafer
JP5943072B2 (en) * 2012-05-22 2016-06-29 日立化成株式会社 Slurry, polishing liquid set, polishing liquid and polishing method for substrate
SG11201407029XA (en) * 2012-05-22 2014-12-30 Hitachi Chemical Co Ltd Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate

Also Published As

Publication number Publication date
US20150123027A1 (en) 2015-05-07
EP2858096A4 (en) 2016-03-09
MY171383A (en) 2019-10-10
US9133366B2 (en) 2015-09-15
KR20150020265A (en) 2015-02-25
CN104321850B (en) 2016-11-23
JP6028942B2 (en) 2016-11-24
KR102123906B1 (en) 2020-06-17
EP2858096B1 (en) 2017-01-11
EP2858096A1 (en) 2015-04-08
CN104321850A (en) 2015-01-28
TWI557219B (en) 2016-11-11
TW201412960A (en) 2014-04-01
WO2013176122A1 (en) 2013-11-28
JPWO2013176122A1 (en) 2016-01-14

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