JPWO2017188381A1 - 気相エピタキシャル成長方法及びエピタキシャル層付き基板の製造方法 - Google Patents
気相エピタキシャル成長方法及びエピタキシャル層付き基板の製造方法 Download PDFInfo
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- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
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- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
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- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L21/02378—Silicon carbide
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
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Abstract
Description
2a 上容器
2b 下容器
3 SiC容器
3a 上容器
3b 下容器
11 高温真空炉
40 SiC基板
41 エピタキシャル層
45 多結晶SiCプレート
Claims (10)
- TaCを含む材料で構成されるTaC容器の内部に、多結晶SiCを含む材料で構成されるSiC容器を収容し、当該SiC容器の内部に下地基板を収容した状態で、
当該TaC容器内がSi蒸気圧となるように、かつ、温度勾配を設けて前記TaC容器を加熱することで、
前記SiC容器の内面がエッチングされることで昇華したC原子と、雰囲気中のSi原子と、が結合することで、前記下地基板上に単結晶SiCのエピタキシャル層を成長させるエピタキシャル層成長工程を行うことを特徴とする気相エピタキシャル成長方法。 - 請求項1に記載の気相エピタキシャル成長方法であって、
前記下地基板の材料がAl化合物又はN化合物であることを特徴とする気相エピタキシャル成長方法。 - 請求項1に記載の気相エピタキシャル成長方法であって、
前記下地基板の材料がSiCであり、<11−20>方向又は<1−100>方向に対するオフ角が1°以下であることを特徴とする気相エピタキシャル成長方法。 - 請求項1に記載の気相エピタキシャル成長方法であって、
エピタキシャル層成長工程では、温度勾配が2℃/mm以下であることを特徴とする気相エピタキシャル成長方法。 - 請求項1に記載の気相エピタキシャル成長方法であって、
エピタキシャル層成長工程では、前記SiC容器に複数枚の前記下地基板を配置して、当該複数枚の前記下地基板のそれぞれに前記エピタキシャル層を成長させることを特徴とする気相エピタキシャル成長方法。 - 請求項1に記載の気相エピタキシャル成長方法であって、
前記TaC容器の内面をSi又はSi化合物とし、前記エピタキシャル層の成長時の加熱により、当該TaC容器の内面からSi原子が昇華することで、当該TaC容器内をSi蒸気圧とすることを特徴とする気相エピタキシャル成長方法。 - 請求項1に記載の気相エピタキシャル成長方法であって、
前記エピタキシャル層の結晶多形が3C−SiCであることを特徴とする気相エピタキシャル成長方法。 - 請求項1に記載の気相エピタキシャル成長方法であって、
前記エピタキシャル層の結晶多形が4H−SiC又は6H−SiCであることを特徴とする気相エピタキシャル成長方法。 - 請求項1に記載の気相エピタキシャル成長方法を用いることを特徴とするエピタキシャル層付き基板の製造方法。
- 請求項9に記載のエピタキシャル層付き基板の製造方法であって、
前記下地基板の材料はSiCであり、前記下地基板をSiC容器を介さず前記TaC容器に収容してSi蒸気圧下で加熱することで当該下地基板をエッチングすることを特徴とするエピタキシャル層付き基板の製造方法。
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JP6226648B2 (ja) * | 2013-09-04 | 2017-11-08 | 昭和電工株式会社 | SiCエピタキシャルウェハの製造方法 |
US10753010B2 (en) * | 2014-09-25 | 2020-08-25 | Pallidus, Inc. | Vapor deposition apparatus and techniques using high puritiy polymer derived silicon carbide |
JP2017105697A (ja) * | 2015-11-26 | 2017-06-15 | 東洋炭素株式会社 | 薄型のSiCウエハの製造方法及び薄型のSiCウエハ |
EP3892762A1 (en) | 2016-04-28 | 2021-10-13 | Kwansei Gakuin Educational Foundation | Vapour-phase epitaxial growth method, and method for producing substrate equipped with epitaxial layer |
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2017
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EP3450595A4 (en) | 2019-12-04 |
WO2017188381A1 (ja) | 2017-11-02 |
CN109072478A (zh) | 2018-12-21 |
US20220259759A1 (en) | 2022-08-18 |
EP3450595A1 (en) | 2019-03-06 |
CN114293247A (zh) | 2022-04-08 |
US20220259760A1 (en) | 2022-08-18 |
JP2020147499A (ja) | 2020-09-17 |
JP6980202B2 (ja) | 2021-12-15 |
EP3892761A1 (en) | 2021-10-13 |
JP6980201B2 (ja) | 2021-12-15 |
JP2020169120A (ja) | 2020-10-15 |
US11359307B2 (en) | 2022-06-14 |
US20240044042A1 (en) | 2024-02-08 |
JP6721904B2 (ja) | 2020-07-15 |
EP3892762A1 (en) | 2021-10-13 |
US20190136409A1 (en) | 2019-05-09 |
CN114351248A (zh) | 2022-04-15 |
CN114351248B (zh) | 2024-08-16 |
CN109072478B (zh) | 2021-12-03 |
EP3450595B1 (en) | 2021-07-14 |
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