JPWO2016002157A1 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JPWO2016002157A1 JPWO2016002157A1 JP2016530819A JP2016530819A JPWO2016002157A1 JP WO2016002157 A1 JPWO2016002157 A1 JP WO2016002157A1 JP 2016530819 A JP2016530819 A JP 2016530819A JP 2016530819 A JP2016530819 A JP 2016530819A JP WO2016002157 A1 JPWO2016002157 A1 JP WO2016002157A1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 75
- 239000000758 substrate Substances 0.000 claims abstract description 111
- 150000004767 nitrides Chemical class 0.000 claims abstract description 19
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 26
- 239000013078 crystal Substances 0.000 claims description 24
- 229910052594 sapphire Inorganic materials 0.000 claims description 24
- 239000010980 sapphire Substances 0.000 claims description 24
- 229910002601 GaN Inorganic materials 0.000 claims description 14
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 9
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 229910002704 AlGaN Inorganic materials 0.000 abstract description 15
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 41
- 239000010936 titanium Substances 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 239000010931 gold Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000007850 degeneration Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
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Abstract
Description
まず、第1の実施形態で用いる酸化ガリウム(Ga2O3)基板について説明する。単斜晶構造であるGa2O3は、β相が安定相であり、a軸、b軸及びc軸の各格子定数がそれぞれ1.223nm、0.304nm、及び0.580nmと異なるのが特徴である。酸化ガリウムは、さらに熱膨張係数にも異方性を有している。具体的には、結晶軸における[100]方向は、1.9×10−6/K〜5.3×10−6/Kであり、[010]方向は、5.9×10−6/K〜8.6×10−6/Kであり、[001]方向は、5.9×10−6/K〜8.6×10−6/Kである。
以下、第2の実施形態で用いる応力付与部を有する基板が電子走行層に応力を付与する原理について説明する。
102 バッファ層
103 電子走行層
104 電子供給層
105 キャップ層
106 ゲート電極
107 ソース電極
108 ドレイン電極
201 サファイア基板
202 バッファ層
203 電子走行層
204 電子供給層
205 キャップ層
206 ゲート電極
207 ソース電極
208 ドレイン電極
209 応力付与部(複数の領域)
209a 応力付与部(第1の領域)
209b 応力付与部(第2の領域)
Claims (15)
- 基板と、
前記基板の上に配置され、第1の窒化物半導体により構成された電子走行層と、
前記電子走行層の上に配置され、第2の窒化物半導体により構成された電子供給層とを備え、
前記基板は、該基板における主面内の第1の方向と、前記主面内で前記第1の方向と直交する第2の方向とにおいて互いの熱膨張係数が異なり、
前記電子走行層において、引っ張り応力が生じている半導体装置。 - 前記電子走行層において電子が走行する方向には、前記引っ張り応力が生じている請求項1に記載の半導体装置。
- 前記基板は、酸化ガリウムにより構成されている請求項1又は2に記載の半導体装置。
- 前記電子走行層において電子が走行する方向は、前記酸化ガリウムの結晶軸における[−102]方向と一致する請求項3に記載の半導体装置。
- 前記電子走行層において、前記引っ張り応力とは異なる方向には、前記引っ張り応力よりも小さい引っ張り応力又は圧縮応力が生じている請求項1から4のいずれか1項に記載の半導体装置。
- 第1の密度を有する基板と、
前記基板の上に配置され、第1の窒化物半導体により構成された電子走行層と、
前記電子走行層の上に配置され、第2の窒化物半導体により構成された電子供給層とを備え、
前記基板は、前記第1の密度よりも小さい第2の密度を有する複数の領域を有している半導体装置。 - 前記複数の領域は、それぞれが複数の第1の領域及び第2の領域を含み、
前記第2の領域は、前記第1の領域よりも前記基板の裏面側に形成されている請求項6に記載の半導体装置。 - 前記複数の第1の領域は、前記基板における主面の第1の方向よりも、前記主面内で前記第1の方向と直交する第2の方向において、より密に形成されている請求項7に記載の半導体装置。
- 前記複数の第2の領域は、前記第2の方向よりも前記第1の方向において、より密に形成されている請求項8に記載の半導体装置。
- 前記電子走行層には、引っ張り応力が付与される請求項6から9のいずれか1項に記載の半導体装置。
- 前記電子走行層において電子が走行する方向には、引っ張り応力が生じている請求項6から10のいずれか1項に記載の半導体装置。
- 前記電子走行層において、前記引っ張り応力とは異なる方向には、前記引っ張り応力よりも小さい引っ張り応力又は圧縮応力が生じている請求項10又は11に記載の半導体装置。
- 前記複数の領域は、それぞれレーザ照射により形成された体積膨張領域である請求項6から12のいずれか1項に記載の半導体装置。
- 前記基板は、サファイア、シリコン、窒化ガリウム又は酸化ガリウムにより構成されている請求項6から13のいずれか1項に記載の半導体装置。
- 前記電子供給層の上方で、且つ引っ張り応力が付与される方向に互いに間隔をおいて配置された、ゲート電極、ソース電極及びドレイン電極をさらに備えている請求項1から14のいずれか1項に記載の半導体装置。
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JP2012518916A (ja) * | 2009-02-25 | 2012-08-16 | エルジー イノテック カンパニー リミテッド | 発光素子の製造方法 |
JP2012169452A (ja) * | 2011-02-14 | 2012-09-06 | Fujitsu Ltd | 化合物半導体装置及びその製造方法 |
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US10476234B2 (en) * | 2015-04-08 | 2019-11-12 | University Of Houston System | Externally-strain-engineered semiconductor photonic and electronic devices and assemblies and methods of making same |
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US9899506B2 (en) | 2018-02-20 |
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