JPWO2015076257A1 - スイッチングデバイスおよび電子回路 - Google Patents
スイッチングデバイスおよび電子回路 Download PDFInfo
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- JPWO2015076257A1 JPWO2015076257A1 JP2015549156A JP2015549156A JPWO2015076257A1 JP WO2015076257 A1 JPWO2015076257 A1 JP WO2015076257A1 JP 2015549156 A JP2015549156 A JP 2015549156A JP 2015549156 A JP2015549156 A JP 2015549156A JP WO2015076257 A1 JPWO2015076257 A1 JP WO2015076257A1
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- terminal
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- conductor layer
- switching device
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- 238000001514 detection method Methods 0.000 claims description 20
- 229920005989 resin Polymers 0.000 claims description 12
- 239000011347 resin Substances 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 abstract description 26
- 239000004020 conductor Substances 0.000 description 178
- 239000002184 metal Substances 0.000 description 36
- 229910052751 metal Inorganic materials 0.000 description 36
- 229910000679 solder Inorganic materials 0.000 description 33
- 239000000758 substrate Substances 0.000 description 32
- 238000010586 diagram Methods 0.000 description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 11
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 230000000630 rising effect Effects 0.000 description 6
- 238000012544 monitoring process Methods 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 5
- 238000003825 pressing Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- 239000011889 copper foil Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 229920006015 heat resistant resin Polymers 0.000 description 1
- 210000001503 joint Anatomy 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/08104—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in field-effect transistor switches
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/0092—Arrangements for measuring currents or voltages or for indicating presence or sign thereof measuring current only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
- H02H3/20—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess voltage
- H02H3/202—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess voltage for dc systems
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- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
- H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
- H02H9/046—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere responsive to excess voltage appearing at terminals of integrated circuits
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
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- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
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- H—ELECTRICITY
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- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/12—Modifications for increasing the maximum permissible switched current
- H03K17/122—Modifications for increasing the maximum permissible switched current in field-effect transistor switches
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Abstract
Description
2 樹脂パッケージ
3 ソース端子
4 センスソース端子
5 ゲート端子
6 ドレイン端子
11 半導体チップ
12 ドレインパッド
13 ソースパッド
14 ゲートパッド
16 ソース用ワイヤ
17 センスソース用ワイヤ
19 MOSFET
22,R1〜R4 外部抵抗
31 インバータ回路
32 第1のスイッチングデバイス
33 第2のスイッチングデバイス
34 第3のスイッチングデバイス
35 第4のスイッチングデバイス
40 制御部
41 電源
42 負荷
51 増幅回路
52 第1の切替回路
53 ゲート抵抗
54 第2の切替回路
55 電流遮断抵抗
56 過電流検出回路
57 電流検出用抵抗
58 比較回路
59 電圧監視部
61 半導体モジュール
Tr1〜Tr4 スイッチング素子
Di1〜Di4 Di1〜Di4
Claims (8)
- 第1電極、第2電極および第3電極を有し、前記第2電極−第3電極間に電位差を与えた状態で前記第1電極−第2電極間に駆動電圧を与えることによって、前記第2電極−第3電極間がオン/オフ制御されるSiCスイッチング素子と、
前記第2電極に電気的に接続され、前記駆動電圧を与えるための駆動用端子と、
前記駆動用端子と前記第2電極との間の電流経路に介在され、少なくとも前記駆動用端子および前記第2電極の一方から分離された所定の大きさの外部抵抗とを含む、スイッチングデバイス。 - 前記オン制御によって流れる電流を出力するための出力端子と、
前記出力端子と前記第2電極とを接続する導電部材とを含み、
前記外部抵抗は、前記導電部材を含む、請求項1に記載のスイッチングデバイス。 - 前記導電部材は、前記出力端子と前記第2電極との間に張られたボンディングワイヤを含む、請求項2に記載のスイッチングデバイス。
- 前記SiCスイッチング素子、前記駆動用端子および前記外部抵抗を封止している樹脂パッケージを含む、請求項1〜3のいずれか一項に記載のスイッチングデバイス。
- 前記第1電極がゲート電極であり、前記第2電極がソース電極であり、前記第3電極がドレイン電極であり、前記駆動用端子がセンスソース端子である、請求項1〜4のいずれか一項に記載のスイッチングデバイス。
- 前記第1電極がゲート電極であり、前記第2電極がエミッタ電極であり、前記第3電極がコレクタ電極であり、前記駆動用端子がセンスエミッタ端子である、請求項1〜4のいずれか一項に記載のスイッチングデバイス。
- 前記第1電極がベース電極であり、前記第2電極がエミッタ電極であり、前記第3電極がコレクタ電極であり、前記駆動用端子がセンスエミッタ端子である、請求項1〜4のいずれか一項に記載のスイッチングデバイス。
- 請求項1〜7に記載のスイッチングデバイスと、
前記スイッチングデバイスに過電流が流れていることを検出するための過電流検出回路と、
前記過電流検出回路によって過電流が検出されたときに、前記スイッチングデバイスに流れる電流を遮断するための過電流保護回路とを含む、電子回路。
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