JPWO2015033600A1 - 電極対、その作製方法、デバイス用基板及びデバイス - Google Patents
電極対、その作製方法、デバイス用基板及びデバイス Download PDFInfo
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Abstract
Description
[1] 一方の電極と他方の電極とがギャップを有して向かい合うように同一面上に設けられ、
前記一方の電極と前記他方の電極との向かい合う部分が、互いに近づくにつれて前記面から遠ざかるように湾曲している、電極対。
[2] 前記一方の電極及び前記他方の電極が、一方向に延びた本体部と、該本体部から互いの先端が向かい合うように延びて近接する近接部と、をそれぞれ備え、
前記本体部が前記面に接触しており、前記近接部が前記面に接触しておらず前記近接部が前記先端に近づくに従い前記面から遠ざかるように湾曲している、前記[1]に記載の電極対。
[3] 前記近接部は、前記本体部から前記先端に向かう軸に対して垂直な断面積が前記先端に近づくに従い小さくなる凸の外形曲面を有している、前記[2]に記載の電極対。
[4] 前記一方の電極と前記他方の電極が、それぞれ、金属層と、該金属層と前記面との間に設けられ該金属層を前記面に密着させる密着層とで構成され、
前記近接部が前記金属層で構成されている、前記[2]に記載の電極対。
[5] 基板と、一方の電極と他方の電極とがギャップを有するように前記基板上に設けられた電極の対と、前記電極の対を覆うように設けられた絶縁層と、を備え、
前記一方の電極と、前記他方の電極と、さらに前記基板及び前記絶縁層との間に空間が形成されている、デバイス用基板。
[6] 前記[1]乃至[4]の何れかに記載の電極対がナノギャップを有するように備えられ、
前記一方の電極及び前記他方の電極をソース、ドレインの各電極とし、
前記ナノギャップに、ナノ粒子又は機能性分子が配置されている、デバイス。
[7] 前記[1]乃至[4]の何れかに記載の電極対を光伝導アンテナとする、デバイス。
[8] 初期ギャップを有するように間隔をあけて種電極の対が形成された基板をサンプルとして準備し、
前記サンプルを無電解メッキ液に浸漬する際、一定時間経過すると前記無電解メッキ液を交換する、電極対の作製方法。
[9] 前記無電解メッキ液を交換する回数を調整することにより、一方の電極と他方の電極との隙間を一定に保ちながら、対向する面を縦方向に延ばす、前記[8]に記載の電極対の作製方法。
10A,20A:デバイス
11:基板
11A:半導体基板
11B:絶縁層(第1の絶縁層)
12:電極
12A:一方の電極
12B:他方の電極
12C,12D,12X,12Y:金属層
12E,12F:種電極
13:絶縁層(第2の絶縁層)
13A:空間
14A,14B,14C,14D:密着層
15:本体部
16:近接部
16A:先端
16B:対向面
16P:上部
16Q:下部
16R:手前部
16S:奥部
17:ギャップ
18:金属ナノ粒子(機能性分子)
19:トップゲート
21,22:保護層
30:THz電磁波を発生するシステム
31:光伝導アンテナ素子
32:平行伝送線路
33:アンテナ
33A:一方の電極
33B:他方の電極
34:基板(GaAs基板)
35:半球レンズ
図1は、本発明の第1実施形態に係る電極対を示し、(A)は(B)のX1−X1線に沿う断面図であり、(B)は平面図である。本発明の実施形態に係る電極対10は、一方の電極12Aと他方の電極12Bとがギャップ17を有して向かい合うように同一面上に設けられて構成されており、一方の電極12Aと他方の電極12Bとの向かい合う部分が、互いに近づくにつれてその面から遠ざかるように湾曲している。以下、その面が基板11の表面である場合を例にとって説明する。
前述した電極対10,20を用いたデバイス10A,20Aを説明する。ここでのギャップ17はナノサイズを有するように設定されるので、ギャップ17が「ナノギャップ」と呼ばれ、そのような電極対が「ナノギャップ電極」と呼ばれる。図1及び図2に点線で示すように、ギャップ17間に、金属ナノ粒子や機能性分子(「機能性分子」は「機能分子」とも呼ばれる。)18を配置し、その金属ナノ粒子や機能性分子18及び電極12上に絶縁層13を設ける。絶縁層13を絶縁層11Bと区別するために、絶縁層11Bを第1の絶縁層と呼び、絶縁層13を第2の絶縁層と呼ぶことがある。さらに、図1及び図2に示すように、金属ナノ粒子や機能性分子18に対して電位を印加するために、第2の絶縁層13上にトップゲート19を設け、一方の電極12A及び他方の電極Bと同一面上にサイドゲート(図示せず)を設ける。これにより、金属ナノ粒子18と電極12との間にトンネル接合が形成され、トップゲート19やサイドゲートにより金属ナノ粒子の電位を調整することができ、単電子デバイスが構成される。また、機能性分子18として例えばフラーレンを配置すれば、分子デバイスが構成される。このようにナノギャップ電極を利用したナノデバイスを提供することができる。
次に、本発明の各実施形態に係るナノギャップ電極の作製方法について説明する。以下では図2に示すナノギャップ電極を例にとって説明する。
第1ステップ:半導体基板11A上に第1の絶縁層11Bを形成する。
第2ステップ:第1の絶縁層11B上に、密着層14A,14Bを形成する。
第3ステップ:無電解メッキ法により電極対を形成し、その後必要に応じて分子定規無電解メッキ法によりギャップ長が所定の値になるようにギャップ長を狭める。
メッキは次のように行う。8mlの超純水を測り取り、8μl(マイクロリットル)のメッキ原液を加え、サンプルを所望の時間、室温下でメッキ液に浸漬させる。メッキ原液に対する超純水の希釈割合は1対1000となる。このサンプルを取り出し、超純水でのリンス、アセトンボイル、エタノールボイルを行い、窒素ガンでサンプルをブローする。このメッキプロセスを2回繰り返すにより、ヨウ素無電解メッキ法を用いて、種電極層にメッキを施す。
比較例として次のようなサンプルを作製した。
最初に、実施例と同様に、シリコン基板11A上にシリコン酸化膜11Bを全面に設けた基板11を用意し、密着層14A,14B,14C,14Dとして2nmのTi層を形成し、密着層14A,14B,14C,14D上にAuを10nm蒸着して、種電極層を作製した。
ヨウ素メッキの際のメッキ原液の希釈の割合は、500倍〜2000倍が好ましい。
分子定規無電解の塩化金酸の濃度は、0.1mM〜0.5mMが好ましい。
Claims (9)
- 一方の電極と他方の電極とがギャップを有して向かい合うように同一面上に設けられ、
前記一方の電極と前記他方の電極との向かい合う部分が、互いに近づくにつれて前記面から遠ざかるように湾曲している、電極対。 - 前記一方の電極及び前記他方の電極が、一方向に延びた本体部と、該本体部から互いの先端が向かい合うように延びて近接する近接部と、をそれぞれ備え、
前記本体部が前記面に接触しており、前記近接部が前記面に接触しておらず前記近接部が前記先端に近づくに従い前記面から遠ざかるように湾曲している、請求項1に記載の電極対。 - 前記近接部は、前記本体部から前記先端に向かう軸に対して垂直な断面積が前記先端に近づくに従い小さくなる凸の外形曲面を有している、請求項2に記載の電極対。
- 前記一方の電極と前記他方の電極が、それぞれ、金属層と、該金属層と前記面との間に設けられ該金属層を前記面に密着させる密着層とで構成され、
前記近接部が前記金属層で構成されている、請求項2に記載の電極対。 - 基板と、一方の電極と他方の電極とがギャップを有するように前記基板上に設けられた電極の対と、前記電極の対を覆うように設けられた絶縁層と、を備え、
前記一方の電極と、前記他方の電極と、さらに前記基板及び前記絶縁層との間に空間が形成されている、デバイス用基板。 - 請求項1乃至4の何れかに記載の電極対がナノギャップを有するように備えられ、
前記一方の電極及び前記他方の電極をソース、ドレインの各電極とし、
前記ナノギャップに、ナノ粒子又は機能性分子が配置されている、デバイス。 - 請求項1乃至4の何れかに記載の電極対を光伝導アンテナとする、デバイス。
- 初期ギャップを有するように間隔をあけて種電極の対が形成された基板をサンプルとして準備し、
前記サンプルを無電解メッキ液に浸漬する際、一定時間経過すると前記無電解メッキ液を交換する、電極対の作製方法。 - 前記無電解メッキ液を交換する回数を調整することにより、一方の電極と他方の電極との隙間を一定に保ちながら、対向する面を縦方向に延ばす、請求項8に記載の電極対の作製方法。
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005276892A (ja) * | 2004-03-23 | 2005-10-06 | Kyocera Corp | 配線基板 |
JP2008192712A (ja) * | 2007-02-01 | 2008-08-21 | Japan Science & Technology Agency | トンネル磁気抵抗素子 |
JP2011119642A (ja) * | 2009-12-02 | 2011-06-16 | Korea Electronics Telecommun | 多結晶ガリウム砒素薄膜を含む光伝導体素子及びその製造方法 |
JP2011176211A (ja) * | 2010-02-25 | 2011-09-08 | National Institute Of Advanced Industrial Science & Technology | スイッチング素子 |
JP2012047595A (ja) * | 2010-08-26 | 2012-03-08 | Hiroshima Univ | テラヘルツ波検出装置 |
WO2012121067A1 (ja) * | 2011-03-08 | 2012-09-13 | 独立行政法人科学技術振興機構 | ナノギャップ長を有する電極構造の作製方法並びにそれにより得られるナノギャップ長を有する電極構造及びナノデバイス |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU2002353778A1 (en) * | 2001-08-14 | 2003-03-18 | The Penn State Research Foundation | Fabrication of molecular scale devices using fluidic assembly |
JP3974429B2 (ja) * | 2002-02-28 | 2007-09-12 | 株式会社東芝 | 乱数発生素子 |
US6673717B1 (en) * | 2002-06-26 | 2004-01-06 | Quantum Logic Devices, Inc. | Methods for fabricating nanopores for single-electron devices |
WO2004018730A1 (ja) * | 2002-08-23 | 2004-03-04 | Eamex Corporation | 電極形成方法 |
US20060134442A1 (en) * | 2002-12-27 | 2006-06-22 | Minoru Sugiyama | Method for electroless plating |
US6791338B1 (en) | 2003-01-31 | 2004-09-14 | Hewlett-Packard Development Company, L.P. | Gated nanoscale switch having channel of molecular wires |
KR100615237B1 (ko) * | 2004-08-07 | 2006-08-25 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 그의 제조방법 |
JP4054881B2 (ja) * | 2006-02-06 | 2008-03-05 | 松下電器産業株式会社 | 単電子半導体素子の製造方法 |
CN101226879B (zh) * | 2007-01-18 | 2010-04-07 | 中国科学院化学研究所 | 一种纳米间隙电极的制备方法 |
JP2008288346A (ja) * | 2007-05-16 | 2008-11-27 | Hiroshima Univ | 半導体素子 |
US20090130427A1 (en) * | 2007-10-22 | 2009-05-21 | The Regents Of The University Of California | Nanomaterial facilitated laser transfer |
CN101245470B (zh) * | 2008-03-18 | 2011-01-19 | 北京大学 | 一种制备纳米尺度间隙金属电极对的方法 |
JP5281847B2 (ja) * | 2008-08-19 | 2013-09-04 | 独立行政法人科学技術振興機構 | 複合材料及びその製造方法、並びにその製造装置 |
KR101312515B1 (ko) | 2011-04-26 | 2013-10-01 | 주식회사 포스코 | 아연도금강판의 탈지용 롤장치 |
JP5797989B2 (ja) | 2011-09-13 | 2015-10-21 | パイオニア株式会社 | アンテナ素子およびアンテナ素子の製造方法 |
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005276892A (ja) * | 2004-03-23 | 2005-10-06 | Kyocera Corp | 配線基板 |
JP2008192712A (ja) * | 2007-02-01 | 2008-08-21 | Japan Science & Technology Agency | トンネル磁気抵抗素子 |
JP2011119642A (ja) * | 2009-12-02 | 2011-06-16 | Korea Electronics Telecommun | 多結晶ガリウム砒素薄膜を含む光伝導体素子及びその製造方法 |
JP2011176211A (ja) * | 2010-02-25 | 2011-09-08 | National Institute Of Advanced Industrial Science & Technology | スイッチング素子 |
JP2012047595A (ja) * | 2010-08-26 | 2012-03-08 | Hiroshima Univ | テラヘルツ波検出装置 |
WO2012121067A1 (ja) * | 2011-03-08 | 2012-09-13 | 独立行政法人科学技術振興機構 | ナノギャップ長を有する電極構造の作製方法並びにそれにより得られるナノギャップ長を有する電極構造及びナノデバイス |
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