JPS647519A - Annealing device - Google Patents
Annealing deviceInfo
- Publication number
- JPS647519A JPS647519A JP16107287A JP16107287A JPS647519A JP S647519 A JPS647519 A JP S647519A JP 16107287 A JP16107287 A JP 16107287A JP 16107287 A JP16107287 A JP 16107287A JP S647519 A JPS647519 A JP S647519A
- Authority
- JP
- Japan
- Prior art keywords
- ring
- shaped
- wafer
- lamps
- shaped lamps
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000137 annealing Methods 0.000 title 1
- 239000010453 quartz Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
- H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
Abstract
PURPOSE:To prevent the generation of a wafer slip line by a method wherein ring-like lamps are concentrically formed, and ring-shaped reflecting mirrors, which reflect and forcus the light sent from the ring-shaped lamps arranged corresponding to the end part of the outer circumference of a wafer, and it is made to irradiate on the outer circumferential end part, are provided. CONSTITUTION:Ring-shaped lamps 5 are concentrically arranged on a wafer 2 through quartz tubes 1. Among the ring-shaped lamps 5, a pair of the ring- shaped lamps 5a on the outermost side are excluded, and on the remaining ring-shaped lamps 5b, ring-shaped reflecting mirrors 6 are arranged. The ring- shaped lamps 5a on the outermost side on the upper and the lower sides are arranged on one forcus position of a pair of ring-shaped reflecting mirrors 7 having the reflection cross-section of oval arc shape. The light sent from the ring-shaped lamps 5b is formed into a parallel light by the ring-shaped reflecting mirrors 6, it is made to irradiate uniformly form both sides of the wafer 2. The light sent from the ring-shaped lamps 5a is formed into a focussed light by the ring-shaped reflection mirrors 7, and it is made to irradiate obliquely on the outer circumferential end part of the wafer 2. As a result, the temperature on the planar surface of the wafer 2 can be made uniform.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16107287A JPS647519A (en) | 1987-06-30 | 1987-06-30 | Annealing device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16107287A JPS647519A (en) | 1987-06-30 | 1987-06-30 | Annealing device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS647519A true JPS647519A (en) | 1989-01-11 |
Family
ID=15728089
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16107287A Pending JPS647519A (en) | 1987-06-30 | 1987-06-30 | Annealing device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS647519A (en) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2653215A1 (en) * | 1989-10-17 | 1991-04-19 | Sitesa Addax | Device for heating a flat body, particularly a semiconductor board |
EP0468874A2 (en) * | 1990-07-25 | 1992-01-29 | Sumitomo Electric Industries, Ltd. | Lamp annealing process for semiconductor wafer and apparatus for execution of such process |
EP0505928A3 (en) * | 1991-03-26 | 1994-08-17 | Siemens Ag | Process for the rapid thermal annealing of a semiconductor wafer using irradiation |
US6385396B1 (en) * | 1999-05-12 | 2002-05-07 | National Science Council | Reflector structure for improving irradiation uniformity of linear lamp array |
JP2002270532A (en) * | 2001-03-14 | 2002-09-20 | Tokyo Electron Ltd | Heating device and thermal treatment apparatus |
JP2005026354A (en) * | 2003-06-30 | 2005-01-27 | Toshiba Corp | Heat treatment apparatus, heat treatment method, and method for manufacturing semiconductor device |
JP2008226934A (en) * | 2007-03-09 | 2008-09-25 | Tokyo Electron Ltd | Substrate treatment equipment |
JP2015005652A (en) * | 2013-06-21 | 2015-01-08 | 独立行政法人産業技術総合研究所 | Thermal treatment device |
JP2018181925A (en) * | 2017-04-05 | 2018-11-15 | ウシオ電機株式会社 | Heating light source device |
-
1987
- 1987-06-30 JP JP16107287A patent/JPS647519A/en active Pending
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2653215A1 (en) * | 1989-10-17 | 1991-04-19 | Sitesa Addax | Device for heating a flat body, particularly a semiconductor board |
EP0468874A2 (en) * | 1990-07-25 | 1992-01-29 | Sumitomo Electric Industries, Ltd. | Lamp annealing process for semiconductor wafer and apparatus for execution of such process |
EP0468874A3 (en) * | 1990-07-25 | 1992-06-03 | Sumitomo Electric Industries, Ltd. | Lamp annealing process for semiconductor wafer and apparatus for execution of such process |
EP0505928A3 (en) * | 1991-03-26 | 1994-08-17 | Siemens Ag | Process for the rapid thermal annealing of a semiconductor wafer using irradiation |
US6385396B1 (en) * | 1999-05-12 | 2002-05-07 | National Science Council | Reflector structure for improving irradiation uniformity of linear lamp array |
JP2002270532A (en) * | 2001-03-14 | 2002-09-20 | Tokyo Electron Ltd | Heating device and thermal treatment apparatus |
JP2005026354A (en) * | 2003-06-30 | 2005-01-27 | Toshiba Corp | Heat treatment apparatus, heat treatment method, and method for manufacturing semiconductor device |
JP2008226934A (en) * | 2007-03-09 | 2008-09-25 | Tokyo Electron Ltd | Substrate treatment equipment |
JP2015005652A (en) * | 2013-06-21 | 2015-01-08 | 独立行政法人産業技術総合研究所 | Thermal treatment device |
JP2018181925A (en) * | 2017-04-05 | 2018-11-15 | ウシオ電機株式会社 | Heating light source device |
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