JPS647519A - Annealing device - Google Patents
Annealing deviceInfo
- Publication number
- JPS647519A JPS647519A JP16107287A JP16107287A JPS647519A JP S647519 A JPS647519 A JP S647519A JP 16107287 A JP16107287 A JP 16107287A JP 16107287 A JP16107287 A JP 16107287A JP S647519 A JPS647519 A JP S647519A
- Authority
- JP
- Japan
- Prior art keywords
- ring
- shaped
- wafer
- lamps
- shaped lamps
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000137 annealing Methods 0.000 title 1
- 239000010453 quartz Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
- H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16107287A JPS647519A (en) | 1987-06-30 | 1987-06-30 | Annealing device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16107287A JPS647519A (en) | 1987-06-30 | 1987-06-30 | Annealing device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS647519A true JPS647519A (en) | 1989-01-11 |
Family
ID=15728089
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16107287A Pending JPS647519A (en) | 1987-06-30 | 1987-06-30 | Annealing device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS647519A (ja) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2653215A1 (fr) * | 1989-10-17 | 1991-04-19 | Sitesa Addax | Dispositif de chauffe d'un corps plat, en particulier d'une plaque de semi-conducteur. |
EP0468874A2 (en) * | 1990-07-25 | 1992-01-29 | Sumitomo Electric Industries, Ltd. | Lamp annealing process for semiconductor wafer and apparatus for execution of such process |
EP0505928A3 (en) * | 1991-03-26 | 1994-08-17 | Siemens Ag | Process for the rapid thermal annealing of a semiconductor wafer using irradiation |
US6385396B1 (en) * | 1999-05-12 | 2002-05-07 | National Science Council | Reflector structure for improving irradiation uniformity of linear lamp array |
JP2002270532A (ja) * | 2001-03-14 | 2002-09-20 | Tokyo Electron Ltd | 加熱装置及び熱処理装置 |
JP2005026354A (ja) * | 2003-06-30 | 2005-01-27 | Toshiba Corp | 熱処理装置,熱処理方法,半導体装置の製造方法 |
JP2008226934A (ja) * | 2007-03-09 | 2008-09-25 | Tokyo Electron Ltd | 基板処理装置 |
JP2015005652A (ja) * | 2013-06-21 | 2015-01-08 | 独立行政法人産業技術総合研究所 | 熱処理装置 |
JP2018181925A (ja) * | 2017-04-05 | 2018-11-15 | ウシオ電機株式会社 | 加熱光源装置 |
-
1987
- 1987-06-30 JP JP16107287A patent/JPS647519A/ja active Pending
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2653215A1 (fr) * | 1989-10-17 | 1991-04-19 | Sitesa Addax | Dispositif de chauffe d'un corps plat, en particulier d'une plaque de semi-conducteur. |
EP0468874A2 (en) * | 1990-07-25 | 1992-01-29 | Sumitomo Electric Industries, Ltd. | Lamp annealing process for semiconductor wafer and apparatus for execution of such process |
EP0468874A3 (en) * | 1990-07-25 | 1992-06-03 | Sumitomo Electric Industries, Ltd. | Lamp annealing process for semiconductor wafer and apparatus for execution of such process |
EP0505928A3 (en) * | 1991-03-26 | 1994-08-17 | Siemens Ag | Process for the rapid thermal annealing of a semiconductor wafer using irradiation |
US6385396B1 (en) * | 1999-05-12 | 2002-05-07 | National Science Council | Reflector structure for improving irradiation uniformity of linear lamp array |
JP2002270532A (ja) * | 2001-03-14 | 2002-09-20 | Tokyo Electron Ltd | 加熱装置及び熱処理装置 |
JP2005026354A (ja) * | 2003-06-30 | 2005-01-27 | Toshiba Corp | 熱処理装置,熱処理方法,半導体装置の製造方法 |
JP2008226934A (ja) * | 2007-03-09 | 2008-09-25 | Tokyo Electron Ltd | 基板処理装置 |
JP2015005652A (ja) * | 2013-06-21 | 2015-01-08 | 独立行政法人産業技術総合研究所 | 熱処理装置 |
JP2018181925A (ja) * | 2017-04-05 | 2018-11-15 | ウシオ電機株式会社 | 加熱光源装置 |
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