JPS647519A - Annealing device - Google Patents

Annealing device

Info

Publication number
JPS647519A
JPS647519A JP16107287A JP16107287A JPS647519A JP S647519 A JPS647519 A JP S647519A JP 16107287 A JP16107287 A JP 16107287A JP 16107287 A JP16107287 A JP 16107287A JP S647519 A JPS647519 A JP S647519A
Authority
JP
Japan
Prior art keywords
ring
shaped
wafer
lamps
shaped lamps
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16107287A
Other languages
English (en)
Inventor
Eiichi Umemura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP16107287A priority Critical patent/JPS647519A/ja
Publication of JPS647519A publication Critical patent/JPS647519A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/268Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H01L21/2686Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
JP16107287A 1987-06-30 1987-06-30 Annealing device Pending JPS647519A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16107287A JPS647519A (en) 1987-06-30 1987-06-30 Annealing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16107287A JPS647519A (en) 1987-06-30 1987-06-30 Annealing device

Publications (1)

Publication Number Publication Date
JPS647519A true JPS647519A (en) 1989-01-11

Family

ID=15728089

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16107287A Pending JPS647519A (en) 1987-06-30 1987-06-30 Annealing device

Country Status (1)

Country Link
JP (1) JPS647519A (ja)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2653215A1 (fr) * 1989-10-17 1991-04-19 Sitesa Addax Dispositif de chauffe d'un corps plat, en particulier d'une plaque de semi-conducteur.
EP0468874A2 (en) * 1990-07-25 1992-01-29 Sumitomo Electric Industries, Ltd. Lamp annealing process for semiconductor wafer and apparatus for execution of such process
EP0505928A3 (en) * 1991-03-26 1994-08-17 Siemens Ag Process for the rapid thermal annealing of a semiconductor wafer using irradiation
US6385396B1 (en) * 1999-05-12 2002-05-07 National Science Council Reflector structure for improving irradiation uniformity of linear lamp array
JP2002270532A (ja) * 2001-03-14 2002-09-20 Tokyo Electron Ltd 加熱装置及び熱処理装置
JP2005026354A (ja) * 2003-06-30 2005-01-27 Toshiba Corp 熱処理装置,熱処理方法,半導体装置の製造方法
JP2008226934A (ja) * 2007-03-09 2008-09-25 Tokyo Electron Ltd 基板処理装置
JP2015005652A (ja) * 2013-06-21 2015-01-08 独立行政法人産業技術総合研究所 熱処理装置
JP2018181925A (ja) * 2017-04-05 2018-11-15 ウシオ電機株式会社 加熱光源装置

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2653215A1 (fr) * 1989-10-17 1991-04-19 Sitesa Addax Dispositif de chauffe d'un corps plat, en particulier d'une plaque de semi-conducteur.
EP0468874A2 (en) * 1990-07-25 1992-01-29 Sumitomo Electric Industries, Ltd. Lamp annealing process for semiconductor wafer and apparatus for execution of such process
EP0468874A3 (en) * 1990-07-25 1992-06-03 Sumitomo Electric Industries, Ltd. Lamp annealing process for semiconductor wafer and apparatus for execution of such process
EP0505928A3 (en) * 1991-03-26 1994-08-17 Siemens Ag Process for the rapid thermal annealing of a semiconductor wafer using irradiation
US6385396B1 (en) * 1999-05-12 2002-05-07 National Science Council Reflector structure for improving irradiation uniformity of linear lamp array
JP2002270532A (ja) * 2001-03-14 2002-09-20 Tokyo Electron Ltd 加熱装置及び熱処理装置
JP2005026354A (ja) * 2003-06-30 2005-01-27 Toshiba Corp 熱処理装置,熱処理方法,半導体装置の製造方法
JP2008226934A (ja) * 2007-03-09 2008-09-25 Tokyo Electron Ltd 基板処理装置
JP2015005652A (ja) * 2013-06-21 2015-01-08 独立行政法人産業技術総合研究所 熱処理装置
JP2018181925A (ja) * 2017-04-05 2018-11-15 ウシオ電機株式会社 加熱光源装置

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