FR2653215A1 - Device for heating a flat body, particularly a semiconductor board - Google Patents
Device for heating a flat body, particularly a semiconductor board Download PDFInfo
- Publication number
- FR2653215A1 FR2653215A1 FR8913520A FR8913520A FR2653215A1 FR 2653215 A1 FR2653215 A1 FR 2653215A1 FR 8913520 A FR8913520 A FR 8913520A FR 8913520 A FR8913520 A FR 8913520A FR 2653215 A1 FR2653215 A1 FR 2653215A1
- Authority
- FR
- France
- Prior art keywords
- lamps
- heating
- flat body
- heating device
- additional
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010438 heat treatment Methods 0.000 title claims abstract description 71
- 239000004065 semiconductor Substances 0.000 title claims abstract description 11
- 235000012431 wafers Nutrition 0.000 claims abstract description 17
- 239000010453 quartz Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 238000011282 treatment Methods 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 238000000137 annealing Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
- H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B9/00—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity
- F27B9/06—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity heated without contact between combustion gases and charge; electrically heated
- F27B9/062—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity heated without contact between combustion gases and charge; electrically heated electrically heated
- F27B9/066—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity heated without contact between combustion gases and charge; electrically heated electrically heated heated by lamps
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B9/00—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity
- F27B9/30—Details, accessories, or equipment peculiar to furnaces of these types
- F27B9/3077—Arrangements for treating electronic components, e.g. semiconductors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/0033—Heating devices using lamps
- H05B3/0038—Heating devices using lamps for industrial applications
- H05B3/0047—Heating devices using lamps for industrial applications for semiconductor manufacture
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Combustion & Propulsion (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Furnace Details (AREA)
Abstract
Description
La présente concerne un dispositif de chauffe d'un corps plat, en particulier d'une plaquette de semi-conducteur. The present relates to a device for heating a flat body, in particular a semiconductor wafer.
Lors de certains traitements que l'on fait subir aux plaquettes de semi-conducteurs en particulier en forme de disques, on chauffe ces dernières. Pour celà, on dispose en vis-à-vis des deux faces de la plaquette des faisceaux de lampes de chauffe cylindriques qui sont disposées parallèlements à ces faces. On s'est cependant aperçu qu'une telle disposition engendre une inhomogénéité de la température de la plaquette notamment entre sa partie centrale et sa périphérie. During certain treatments which are subjected to semiconductor wafers, in particular in the form of discs, the latter are heated. For this, there are vis-à-vis the two faces of the wafer of bundles of cylindrical heating lamps which are arranged parallel to these faces. However, it has been observed that such an arrangement generates an inhomogeneity in the temperature of the wafer, in particular between its central part and its periphery.
Pour tenter d'éviter ce problème, on a proposé de placer autour et à distance de la plaquette un anneau de garde qui constitue un miroir améliorant la chauffe du bord de la plaquette. Malgré tout, cette disposition ne convient pas pour les systèmes à chargement automatique des plaquettes et l'anneau de garde engendre des perturbations dans l'écoulement des gaz. To try to avoid this problem, it has been proposed to place around and at a distance from the wafer a guard ring which constitutes a mirror improving the heating of the edge of the wafer. However, this arrangement is not suitable for systems with automatic pad loading and the guard ring generates disturbances in the gas flow.
On a par ailleurs proposé de disposer les deux faisceaux de lampes de chauffe précités de telle sorte que leurs lampes soient croisés à 900. Il a été remarqué que cette disposition ne permet pas de chauffer efficacement le bord de la plaquette traitée. It has also been proposed to arrange the two aforementioned bundles of heating lamps in such a way that their lamps are crossed at 900. It has been noted that this arrangement does not allow the edge of the treated wafer to be efficiently heated.
En outre, les lampes de chauffe cylindriques généra- lement utilisées présentent une partie centrale chauffant de manière homogène. Mais, plus on se rapproche de leurs extrémités, moins elles chauffent. On est donc contraint d'utiliser des lampes de chauffe cylindriques débordant largement de part et d'autre de la plaquette. Celà conduit à des fours de grandes dimensions par rapport à la dimension de la plaquette traitée. In addition, the cylindrical heating lamps generally used have a central part which heats up uniformly. But the closer we get to their ends, the less they heat up. We are therefore forced to use cylindrical heating lamps extending widely on either side of the wafer. This leads to large ovens compared to the dimension of the treated wafer.
La présente invention a pour but de remédier aux incon vénients précités et propose un dispositif de chauffe d'un corps plat qui permet d'obtenir une bonne homogénéité de la température de ce corps plat jusqu a son bord périphérique. The object of the present invention is to remedy the aforementioned drawbacks and proposes a device for heating a flat body which makes it possible to obtain good uniformity in the temperature of this flat body up to its peripheral edge.
Selon l'invention, le dispositif de chauffe d'un corps plat, en particulier d'une plaquette de semi-conducteur sensiblement en forme de disque, comprend au moins un faisceau de lampes cylindriques de chauffe disposées parallèlement, qui s'étend en visà-vis de l'une des faces du corps plat et parallèlement à ce dernier, et comprend en outre au moins une lampe cylindrique de chauffe additionnelle qui est disposée au-delà du bord du corps plat et parallèlement à ce dernier et qui est décalée par rapport audit faisceau du côté du corps plat. According to the invention, the device for heating a flat body, in particular a semiconductor wafer substantially in the form of a disc, comprises at least one bundle of cylindrical heating lamps arranged in parallel, which extends opposite -vis of one of the faces of the flat body and parallel to the latter, and further comprises at least one additional cylindrical heating lamp which is disposed beyond the edge of the flat body and parallel to the latter and which is offset by ratio to said beam on the side of the flat body.
Dans une variante, ladite lampe de chauffe additionnelle est disposée perpendiculairement aux lampes constituant ledit faisceau. In a variant, said additional heating lamp is arranged perpendicular to the lamps constituting said beam.
Dans une autre variante, ladite lampe de chauffe additionnelle est disposée parallèlement aux lampes constituant ledit faisceau. In another variant, said additional heating lamp is arranged parallel to the lamps constituting said beam.
Dans une disposition particulière, le dispositif de chauffe comprend deux lampes de chauffe additionnelles disposées symétriquement par rapport au plan du corps plat. In a particular arrangement, the heating device comprises two additional heating lamps arranged symmetrically with respect to the plane of the flat body.
Dans une autre disposition, il peut comprendre deux lampes de chauffe additionnelles disposées symétriquement par rapport au plan médian du corps plat. In another arrangement, it may include two additional heating lamps arranged symmetrically with respect to the median plane of the flat body.
Le dispositif de chauffe selon l'invention peut avantageusement comprendre deux faisceaux de lampes de chauffe qui s'étendent respectivement au moins en vis-à-vis des deux faces du corps plat et auxquels sont associées des lampes de chauffe additionnelles disposées symétriquement par rapport au corps plat. The heating device according to the invention may advantageously comprise two bundles of heating lamps which extend respectively at least vis-à-vis the two faces of the flat body and with which are associated additional heating lamps arranged symmetrically with respect to the flat body.
Le dispositif de chauffe selon l'invention peut comprendre deux paires de lampes de chauffe additionnelles disposées symétriquement par rapport au plan médian du corps plat, les lampes de chaque paire de lampes de chauffe additionnelles étant disposées symétriquement par rapport au plan du corps plat. The heating device according to the invention may comprise two pairs of additional heating lamps arranged symmetrically with respect to the median plane of the flat body, the lamps of each pair of additional heating lamps being arranged symmetrically with respect to the plane of the flat body.
La présente invention a également pour objet un réacteur ou four pour le traitement de plaquettes de semi-conducteur équipé d'un dispositif de chauffe précité. The present invention also relates to a reactor or oven for the treatment of semiconductor wafers equipped with the aforementioned heating device.
Ce réacteur ou four peut avantageusement comprendre une enceinte en quartz délimitant une chambre de réaction dans laquelle la plaquette est disposée et une enveloppe extérieure entourant à distance l'enceinte, les lampes de chauffe constituant le dispositif de chauffe précité étant disposées dans l'espace séparant l'enceinte et l'enveloppe précitées. This reactor or furnace can advantageously comprise a quartz enclosure delimiting a reaction chamber in which the wafer is disposed and an external envelope surrounding the enclosure at a distance, the heating lamps constituting the aforementioned heating device being arranged in the space separating the aforementioned enclosure and envelope.
De préférence, les lampes de chauffe précitées sont des lampes à filament de tungstène. Preferably, the aforementioned heating lamps are tungsten filament lamps.
La présente invention sera mieux comprise à l'étude d'un réacteur ou four pour le traitement d'un corps plat, notamment d'une plaquette de semi-conducteur en forme de disque, décrit à titre d'exemple non limitatif et illustré schématiquement par le dessin sur lequel
- la figure 1 montre une coupe médiane en élévation d'un four équipé d'un dispositif de chauffe selon la présente invention
- et la figure 2 représente une coupe selon II-II du four représenté sur la figure 1.The present invention will be better understood from the study of a reactor or furnace for the treatment of a flat body, in particular of a semiconductor wafer in the form of a disc, described by way of nonlimiting example and illustrated diagrammatically. by the drawing on which
- Figure 1 shows a middle section in elevation of an oven equipped with a heating device according to the present invention
- And Figure 2 shows a section on II-II of the furnace shown in Figure 1.
Comme on peut le voir sur la figure 1, le four repéré d'une manière générale par la référence 1 comprend une enceinte en quartz 2 délimitant une chambre de réaction 3 de forme parallélipipédique dans laquelle est disposée, dans sa partie centrale, une plaquette de semi-conducteurs 4 disposée horizontalement. As can be seen in FIG. 1, the oven generally identified by the reference 1 comprises a quartz enclosure 2 delimiting a reaction chamber 3 of parallelepiped shape in which is placed, in its central part, a plate of semiconductor 4 arranged horizontally.
Autour et à distance de l'enceinte en quartz 2, le four 1 présente une enveloppe extérieure 5 constituant un réflecteur refroidit en général par circulation d'eau. L'enveloppe extérieure 5 délimite avec l'enceinte en quartz, tout autour de cette dernière, un espace 6. Around and at a distance from the quartz enclosure 2, the furnace 1 has an outer casing 5 constituting a reflector generally cooled by circulation of water. The outer envelope 5 delimits with the quartz enclosure, all around the latter, a space 6.
Dans l'espace 6, est disposé un dispositif de chauffe repéré d'une manière générale par la référence 7. In space 6, a heating device is located generally identified by the reference 7.
Ce dispositif de chauffe 7 comprend un faisceau horizontal supérieur 8 et un faisceau horizontal inférieur 9 qui sont respectivement composés de neuf lampes de chauffe 8a et 9a.Les lampes de chauffe cylindriques 8a et 9a des faisceaux 8 et 9 sont disposées parallèlement et leurs axes sont respectivement dans le même plan parallèle aux faces de la plaquette 4. This heating device 7 comprises an upper horizontal beam 8 and a lower horizontal beam 9 which are respectively composed of nine heating lamps 8a and 9a. The cylindrical heating lamps 8a and 9a of the beams 8 and 9 are arranged in parallel and their axes are respectively in the same plane parallel to the faces of the plate 4.
Dans l'exemple, les faisceaux 8 et 9 présentent cinq lampes centrales régulièrement espacées et de part et d'autre de ces dernières, respectivement deux lampes légèrement plus espacées, les deux lampes opposées d'extrémité de chacun des faisceaux étant situées au-delà de la plaquette 4. In the example, the beams 8 and 9 have five regularly spaced central lamps and on either side of the latter, respectively two slightly more spaced lamps, the two opposite end lamps of each of the beams being located beyond of the plate 4.
Comme on peut le voir sur les figures, les parties d'extrémité des lampes 8a et 9a s'étendent au-travers des deux parois verticales opposées Sa et 5b de l'enveloppe 5 et présentent, à l'extérieur, des connexions électriques 8b, 8c et 9b, 9c. As can be seen in the figures, the end parts of the lamps 8a and 9a extend through the two opposite vertical walls Sa and 5b of the casing 5 and have, on the outside, electrical connections 8b , 8c and 9b, 9c.
Le dispositif de chauffe 7 présente en outre deux paires de lampes de chauffe cylindriques additionnelles 10a, 10b et lla, llb qui sont respectivement disposées de part et d'autre et à distance des faisceaux 8 et 9 et qui s'étendent parallèlement aux lampes de chauffe cylindriques 8a et 8b les constituant. Les paires de lampes 10a, 10b et lla, llb sont respectivement décalées vers la plaquette 4 par rapport au plan des faisceaux 8 et 9, les lampes 10a, lla et 10b, llb étant disposées symétriquement par rapport au plan de la plaquette 4. The heating device 7 also has two pairs of additional cylindrical heating lamps 10a, 10b and 11a, 11b which are respectively arranged on either side and at a distance from the beams 8 and 9 and which extend parallel to the lamps. cylindrical heaters 8a and 8b constituting them. The pairs of lamps 10a, 10b and 11a, 11b are respectively offset towards the plate 4 relative to the plane of the beams 8 and 9, the lamps 10a, 11a and 10b, 11b being arranged symmetrically relative to the plane of the plate 4.
Comme les lampes 8a et 8b, les lampes 10a, 10b, lla et llb présentent des extrémités qui s'étendent au-travers des parois Sa et 5b de l'enveloppe extérieure 5 et qui sont munies de connexions électriques à l'intérieur de cette enveloppe. Like the lamps 8a and 8b, the lamps 10a, 10b, 11a and 11b have ends which extend through the walls Sa and 5b of the outer casing 5 and which are provided with electrical connections inside this envelope.
Le dispositif de chauffe 7 comprend également deux paires de lampes de chauffe cylindriques additionnelles 12a, 12b et 13a, 13b qui sont respectivement associées aux faisceaux 8 et 9. Ces paires de lampes de chauffe additionnelles 12a et 12b s'étendent horizontalement, respectivement en-dessous et en-dessus des faisceaux 8 et 9 et transversalement ou perpendiculairement aux lampes 8a et 8a constituant ces faisceaux. Elles sont donc situées du côté de la plaquette 4 par rapport aux faisceaux 8 et 9. Les lampes de chauffe 12a et 13a et les lampes de chauffe 12b et 13b sont respectivement disposées symétriquement par rapport au plan médian de la plaquette 4, qui s'étend perpendiculairement aux lampes 8a et 8b constituant les faisceaux 8 et 9, et les lampes de chauffe 12a et 12b et les lampes de chauffe 13a et 13b sont respectivement disposées symétriquement par rapport au plan de la plaquette 4. The heating device 7 also comprises two pairs of additional cylindrical heating lamps 12a, 12b and 13a, 13b which are respectively associated with the bundles 8 and 9. These pairs of additional heating lamps 12a and 12b extend horizontally, respectively in- below and above the beams 8 and 9 and transversely or perpendicular to the lamps 8a and 8a constituting these beams. They are therefore located on the side of the plate 4 with respect to the bundles 8 and 9. The heating lamps 12a and 13a and the heating lamps 12b and 13b are respectively arranged symmetrically with respect to the median plane of the plate 4, which s' extends perpendicularly to the lamps 8a and 8b constituting the bundles 8 and 9, and the heating lamps 12a and 12b and the heating lamps 13a and 13b are respectively arranged symmetrically with respect to the plane of the plate 4.
Comme les lampes de chauffe additionnelles 12a, 12b, 13a, et 13b se trouvent à l'extérieur de l'enceinte 2, elles sont donc disposées au-delà du bord de la plaquette 4. As the additional heating lamps 12a, 12b, 13a, and 13b are located outside the enclosure 2, they are therefore arranged beyond the edge of the plate 4.
Comme on le voit sur la figure 2, les parties d'extrémité des lampes de chauffe additionnelles 12a et 12b s'étendent au travers des deux parois verticales opposées 5c et 5d de l'enveloppe extérieure 5 et présentent des connexions électriques 14 à l'extérieur de cette enveloppe. Les lampes de chauffe additionnelle 13a et 13b sont montées de la même manière. As seen in Figure 2, the end portions of the additional heating lamps 12a and 12b extend through the two opposite vertical walls 5c and 5d of the outer casing 5 and have electrical connections 14 to the outside of this envelope. The additional heating lamps 13a and 13b are mounted in the same way.
Grâce à la disposition des lampes du dispositif de chauffe 7 décrit ci-dessus, et notamment aux lampes transversales additionnelles 12a, 12b, 13a et 13b qui sont disposées au-delà des parties centrales plus chauffantes des lampes 8a et 9a des faisceaux 8 et 9, on réduit considérablement l'écart de température entre la partie centrale de la plaquette 4 et son bord. Dans un exemple, le rapport entre d'une part les lampes additionnelles ci-dessus et d'autre part les lampes consituant les faisceaux 8 et 9 et les lampes additionnelles 10a, 10b, lla, et llb peut être d'environ 1,5. Thanks to the arrangement of the lamps of the heating device 7 described above, and in particular to the additional transverse lamps 12a, 12b, 13a and 13b which are arranged beyond the more heated central parts of the lamps 8a and 9a of the beams 8 and 9 , the temperature difference between the central part of the plate 4 and its edge is considerably reduced. In one example, the ratio between on the one hand the above additional lamps and on the other hand the lamps constituting the beams 8 and 9 and the additional lamps 10a, 10b, lla, and llb can be approximately 1.5 .
Dans une application particulière, le dispositif de chauffe 7 décrit ci-dessus peut etre monté dans un four 1 de recuit rapide de plaquettes 4 de semi-conducteur, les lampes de chauffe précitées étant des lampes à filament de tungstène constituant une source de rayons infra-rouges. In a particular application, the heating device 7 described above can be mounted in an oven 1 for rapid annealing of semiconductor wafers 4, the aforementioned heating lamps being tungsten filament lamps constituting a source of infrared rays -red.
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8913520A FR2653215A1 (en) | 1989-10-17 | 1989-10-17 | Device for heating a flat body, particularly a semiconductor board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8913520A FR2653215A1 (en) | 1989-10-17 | 1989-10-17 | Device for heating a flat body, particularly a semiconductor board |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR2653215A1 true FR2653215A1 (en) | 1991-04-19 |
Family
ID=9386454
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8913520A Pending FR2653215A1 (en) | 1989-10-17 | 1989-10-17 | Device for heating a flat body, particularly a semiconductor board |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2653215A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5399523A (en) * | 1991-03-26 | 1995-03-21 | Siemens Aktiengesellscaft | Method for the rapid thermal processing of a semiconductor wafer by irradiation |
| US5418885A (en) * | 1992-12-29 | 1995-05-23 | North Carolina State University | Three-zone rapid thermal processing system utilizing wafer edge heating means |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4493977A (en) * | 1982-09-30 | 1985-01-15 | Ushio Denki Kabushiki Kaisha | Method for heating semiconductor wafers by a light-radiant heating furnace |
| US4680451A (en) * | 1985-07-29 | 1987-07-14 | A. G. Associates | Apparatus using high intensity CW lamps for improved heat treating of semiconductor wafers |
| DE3715940A1 (en) * | 1987-05-13 | 1988-12-01 | Lothar Dipl Ing Himmelreich | Infrared soldering furnace for reflow soldering of electronic components on printed circuit boards |
| JPS647519A (en) * | 1987-06-30 | 1989-01-11 | Oki Electric Ind Co Ltd | Annealing device |
-
1989
- 1989-10-17 FR FR8913520A patent/FR2653215A1/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4493977A (en) * | 1982-09-30 | 1985-01-15 | Ushio Denki Kabushiki Kaisha | Method for heating semiconductor wafers by a light-radiant heating furnace |
| US4680451A (en) * | 1985-07-29 | 1987-07-14 | A. G. Associates | Apparatus using high intensity CW lamps for improved heat treating of semiconductor wafers |
| DE3715940A1 (en) * | 1987-05-13 | 1988-12-01 | Lothar Dipl Ing Himmelreich | Infrared soldering furnace for reflow soldering of electronic components on printed circuit boards |
| JPS647519A (en) * | 1987-06-30 | 1989-01-11 | Oki Electric Ind Co Ltd | Annealing device |
Non-Patent Citations (1)
| Title |
|---|
| PATENT ABSTRACTS OF JAPAN, vol. 13, no. 181 (E-750)[3529], 27 avril 1989; & JP-A-1 007 519 (OKI ELECTRIC) * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5399523A (en) * | 1991-03-26 | 1995-03-21 | Siemens Aktiengesellscaft | Method for the rapid thermal processing of a semiconductor wafer by irradiation |
| US5418885A (en) * | 1992-12-29 | 1995-05-23 | North Carolina State University | Three-zone rapid thermal processing system utilizing wafer edge heating means |
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