JPS64740A - Ii-vi compound crystal article and forming method thereof - Google Patents

Ii-vi compound crystal article and forming method thereof

Info

Publication number
JPS64740A
JPS64740A JP7279288A JP7279288A JPS64740A JP S64740 A JPS64740 A JP S64740A JP 7279288 A JP7279288 A JP 7279288A JP 7279288 A JP7279288 A JP 7279288A JP S64740 A JPS64740 A JP S64740A
Authority
JP
Japan
Prior art keywords
single crystal
nucleation
thin
film
nucleus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7279288A
Other languages
Japanese (ja)
Other versions
JPH01740A (en
JP2659746B2 (en
Inventor
Hiroyuki Tokunaga
Takao Yonehara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP7279288A priority Critical patent/JP2659746B2/en
Publication of JPH01740A publication Critical patent/JPH01740A/en
Publication of JPS64740A publication Critical patent/JPS64740A/en
Application granted granted Critical
Publication of JP2659746B2 publication Critical patent/JP2659746B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE: To enable a method, in which a II-VI compound crystal article is formed efficiently through a simple process without using a special device, by shaping a single nucleus to a nucleation surface at the desired position of a base body having a non- nucleation surface having small nucleation density and growing a II-VI compound single crystal from the single nucleus.
CONSTITUTION: A thin-film 5 enabling selective nucleation and having small nucleation density is formed onto a substrate 4 consisting of a material-resisting a high temperature, and a nucleation surface 6 composed of materials of a different kind is shaped sufficiently minutely by patterning through lithography, etc., thus acquiring a base body for forming a crystal. The size of the nucleation surface 6 differs according to the kinds of materials, but it may extend over several microns or less. A nucleus is grown, keeping single crystal structure, and changed into an insular single crystal grain 7. The insular single crystal grain 7 is further grown centering around the nucleation surface 6, maintaining single crystal structure, and can cover one part or the whole of the thin-film 5 (a single crystal 7A). The surface of the single crystal 7A is flattened through etching or polishing as required, and a single crystal layer 8 capable of shaping a desired element is formed onto the thin-film 5.
COPYRIGHT: (C)1989,JPO&Japio
JP7279288A 1987-03-26 1988-03-26 Group II-VI compound crystal article and method of forming the same Expired - Lifetime JP2659746B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7279288A JP2659746B2 (en) 1987-03-26 1988-03-26 Group II-VI compound crystal article and method of forming the same

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP62-71990 1987-03-26
JP7199087 1987-03-26
JP7279288A JP2659746B2 (en) 1987-03-26 1988-03-26 Group II-VI compound crystal article and method of forming the same

Publications (3)

Publication Number Publication Date
JPH01740A JPH01740A (en) 1989-01-05
JPS64740A true JPS64740A (en) 1989-01-05
JP2659746B2 JP2659746B2 (en) 1997-09-30

Family

ID=26413116

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7279288A Expired - Lifetime JP2659746B2 (en) 1987-03-26 1988-03-26 Group II-VI compound crystal article and method of forming the same

Country Status (1)

Country Link
JP (1) JP2659746B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013222762A (en) * 2012-04-13 2013-10-28 Sharp Corp Compound semiconductor layer and manufacturing method of the same, and compound thin film solar cell and manufacturing method of the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013222762A (en) * 2012-04-13 2013-10-28 Sharp Corp Compound semiconductor layer and manufacturing method of the same, and compound thin film solar cell and manufacturing method of the same

Also Published As

Publication number Publication date
JP2659746B2 (en) 1997-09-30

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