JPS64740A - Ii-vi compound crystal article and forming method thereof - Google Patents
Ii-vi compound crystal article and forming method thereofInfo
- Publication number
- JPS64740A JPS64740A JP7279288A JP7279288A JPS64740A JP S64740 A JPS64740 A JP S64740A JP 7279288 A JP7279288 A JP 7279288A JP 7279288 A JP7279288 A JP 7279288A JP S64740 A JPS64740 A JP S64740A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- nucleation
- thin
- film
- nucleus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Recrystallisation Techniques (AREA)
Abstract
PURPOSE: To enable a method, in which a II-VI compound crystal article is formed efficiently through a simple process without using a special device, by shaping a single nucleus to a nucleation surface at the desired position of a base body having a non- nucleation surface having small nucleation density and growing a II-VI compound single crystal from the single nucleus.
CONSTITUTION: A thin-film 5 enabling selective nucleation and having small nucleation density is formed onto a substrate 4 consisting of a material-resisting a high temperature, and a nucleation surface 6 composed of materials of a different kind is shaped sufficiently minutely by patterning through lithography, etc., thus acquiring a base body for forming a crystal. The size of the nucleation surface 6 differs according to the kinds of materials, but it may extend over several microns or less. A nucleus is grown, keeping single crystal structure, and changed into an insular single crystal grain 7. The insular single crystal grain 7 is further grown centering around the nucleation surface 6, maintaining single crystal structure, and can cover one part or the whole of the thin-film 5 (a single crystal 7A). The surface of the single crystal 7A is flattened through etching or polishing as required, and a single crystal layer 8 capable of shaping a desired element is formed onto the thin-film 5.
COPYRIGHT: (C)1989,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7279288A JP2659746B2 (en) | 1987-03-26 | 1988-03-26 | Group II-VI compound crystal article and method of forming the same |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62-71990 | 1987-03-26 | ||
JP7199087 | 1987-03-26 | ||
JP7279288A JP2659746B2 (en) | 1987-03-26 | 1988-03-26 | Group II-VI compound crystal article and method of forming the same |
Publications (3)
Publication Number | Publication Date |
---|---|
JPH01740A JPH01740A (en) | 1989-01-05 |
JPS64740A true JPS64740A (en) | 1989-01-05 |
JP2659746B2 JP2659746B2 (en) | 1997-09-30 |
Family
ID=26413116
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7279288A Expired - Lifetime JP2659746B2 (en) | 1987-03-26 | 1988-03-26 | Group II-VI compound crystal article and method of forming the same |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2659746B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013222762A (en) * | 2012-04-13 | 2013-10-28 | Sharp Corp | Compound semiconductor layer and manufacturing method of the same, and compound thin film solar cell and manufacturing method of the same |
-
1988
- 1988-03-26 JP JP7279288A patent/JP2659746B2/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013222762A (en) * | 2012-04-13 | 2013-10-28 | Sharp Corp | Compound semiconductor layer and manufacturing method of the same, and compound thin film solar cell and manufacturing method of the same |
Also Published As
Publication number | Publication date |
---|---|
JP2659746B2 (en) | 1997-09-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term | ||
FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080606 Year of fee payment: 11 |