JPS64723A - Iii-v compound crystal article and forming method thereof - Google Patents

Iii-v compound crystal article and forming method thereof

Info

Publication number
JPS64723A
JPS64723A JP7279188A JP7279188A JPS64723A JP S64723 A JPS64723 A JP S64723A JP 7279188 A JP7279188 A JP 7279188A JP 7279188 A JP7279188 A JP 7279188A JP S64723 A JPS64723 A JP S64723A
Authority
JP
Japan
Prior art keywords
single crystal
nucleation
thin
film
onto
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7279188A
Other languages
Japanese (ja)
Other versions
JPH01723A (en
JP2659745B2 (en
Inventor
Hiroyuki Tokunaga
Takao Yonehara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP7279188A priority Critical patent/JP2659745B2/en
Publication of JPS64723A publication Critical patent/JPS64723A/en
Publication of JPH01723A publication Critical patent/JPH01723A/en
Application granted granted Critical
Publication of JP2659745B2 publication Critical patent/JP2659745B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE: To form crystals such as a single crystal in required size, a plurality of insular single crystals, a polycrystal, particle size and particle size distribution of which are controlled, etc. by shaping a nucleation surface so that nucleation density thereof is made sufficiently larger than that of a non-nucleation surface and only a single nucleus is grown selectively.
CONSTITUTION: A thin-film 5 enabling selective nucleation and having small nucleation density is formed onto a substrate 4 consisting of a material resisting a high temperature, and a nucleation surface 6 patterned onto the thin-film 5 and composed of materials of a different kind is shaped sufficiently minutely. The single nucleus of a thin-film material is formed only onto the nucleation surface 6 by selecting the proper conditions of deposition. The nucleus is grown while keeping single crystal structure, and changed into an insular single crystal grain 7. The insular single crystal grain 7 is further grown centering around the nucleation surface 6 while maintaining single crystal structure, and turned into a single crystal 7A covering one part or the whole of the thin-film 5. The surface of the single crystal 7A is flattened through etching or polishing as required, thus forming a single crystal layer 8 capable of shaping a desired element onto the thin-film 5.
COPYRIGHT: (C)1989,JPO&Japio
JP7279188A 1987-03-26 1988-03-26 III-Group V compound crystal article and method of forming the same Expired - Lifetime JP2659745B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7279188A JP2659745B2 (en) 1987-03-26 1988-03-26 III-Group V compound crystal article and method of forming the same

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP62-71988 1987-03-26
JP7198887 1987-03-26
JP7279188A JP2659745B2 (en) 1987-03-26 1988-03-26 III-Group V compound crystal article and method of forming the same

Publications (3)

Publication Number Publication Date
JPS64723A true JPS64723A (en) 1989-01-05
JPH01723A JPH01723A (en) 1989-01-05
JP2659745B2 JP2659745B2 (en) 1997-09-30

Family

ID=26413111

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7279188A Expired - Lifetime JP2659745B2 (en) 1987-03-26 1988-03-26 III-Group V compound crystal article and method of forming the same

Country Status (1)

Country Link
JP (1) JP2659745B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5369290A (en) * 1991-04-22 1994-11-29 Canon Kabushiki Kaisha Light emission element using a polycrystalline semiconductor material of III-V group compound
US5818374A (en) * 1996-05-08 1998-10-06 Telefonaktiebolaget Lm Ericsson Switched current delta-sigma modulator

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5369290A (en) * 1991-04-22 1994-11-29 Canon Kabushiki Kaisha Light emission element using a polycrystalline semiconductor material of III-V group compound
US5818374A (en) * 1996-05-08 1998-10-06 Telefonaktiebolaget Lm Ericsson Switched current delta-sigma modulator

Also Published As

Publication number Publication date
JP2659745B2 (en) 1997-09-30

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