JPS64723A - Iii-v compound crystal article and forming method thereof - Google Patents
Iii-v compound crystal article and forming method thereofInfo
- Publication number
- JPS64723A JPS64723A JP7279188A JP7279188A JPS64723A JP S64723 A JPS64723 A JP S64723A JP 7279188 A JP7279188 A JP 7279188A JP 7279188 A JP7279188 A JP 7279188A JP S64723 A JPS64723 A JP S64723A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- nucleation
- thin
- film
- onto
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Recrystallisation Techniques (AREA)
Abstract
PURPOSE: To form crystals such as a single crystal in required size, a plurality of insular single crystals, a polycrystal, particle size and particle size distribution of which are controlled, etc. by shaping a nucleation surface so that nucleation density thereof is made sufficiently larger than that of a non-nucleation surface and only a single nucleus is grown selectively.
CONSTITUTION: A thin-film 5 enabling selective nucleation and having small nucleation density is formed onto a substrate 4 consisting of a material resisting a high temperature, and a nucleation surface 6 patterned onto the thin-film 5 and composed of materials of a different kind is shaped sufficiently minutely. The single nucleus of a thin-film material is formed only onto the nucleation surface 6 by selecting the proper conditions of deposition. The nucleus is grown while keeping single crystal structure, and changed into an insular single crystal grain 7. The insular single crystal grain 7 is further grown centering around the nucleation surface 6 while maintaining single crystal structure, and turned into a single crystal 7A covering one part or the whole of the thin-film 5. The surface of the single crystal 7A is flattened through etching or polishing as required, thus forming a single crystal layer 8 capable of shaping a desired element onto the thin-film 5.
COPYRIGHT: (C)1989,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7279188A JP2659745B2 (en) | 1987-03-26 | 1988-03-26 | III-Group V compound crystal article and method of forming the same |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62-71988 | 1987-03-26 | ||
JP7198887 | 1987-03-26 | ||
JP7279188A JP2659745B2 (en) | 1987-03-26 | 1988-03-26 | III-Group V compound crystal article and method of forming the same |
Publications (3)
Publication Number | Publication Date |
---|---|
JPS64723A true JPS64723A (en) | 1989-01-05 |
JPH01723A JPH01723A (en) | 1989-01-05 |
JP2659745B2 JP2659745B2 (en) | 1997-09-30 |
Family
ID=26413111
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7279188A Expired - Lifetime JP2659745B2 (en) | 1987-03-26 | 1988-03-26 | III-Group V compound crystal article and method of forming the same |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2659745B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5369290A (en) * | 1991-04-22 | 1994-11-29 | Canon Kabushiki Kaisha | Light emission element using a polycrystalline semiconductor material of III-V group compound |
US5818374A (en) * | 1996-05-08 | 1998-10-06 | Telefonaktiebolaget Lm Ericsson | Switched current delta-sigma modulator |
-
1988
- 1988-03-26 JP JP7279188A patent/JP2659745B2/en not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5369290A (en) * | 1991-04-22 | 1994-11-29 | Canon Kabushiki Kaisha | Light emission element using a polycrystalline semiconductor material of III-V group compound |
US5818374A (en) * | 1996-05-08 | 1998-10-06 | Telefonaktiebolaget Lm Ericsson | Switched current delta-sigma modulator |
Also Published As
Publication number | Publication date |
---|---|
JP2659745B2 (en) | 1997-09-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term | ||
FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080606 Year of fee payment: 11 |