JPS6442117A - Crystal growth method - Google Patents
Crystal growth methodInfo
- Publication number
- JPS6442117A JPS6442117A JP19868887A JP19868887A JPS6442117A JP S6442117 A JPS6442117 A JP S6442117A JP 19868887 A JP19868887 A JP 19868887A JP 19868887 A JP19868887 A JP 19868887A JP S6442117 A JPS6442117 A JP S6442117A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- seed
- fine particle
- single crystal
- amorphous silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Recrystallisation Techniques (AREA)
Abstract
PURPOSE:To obtain a single crystal which makes the three-dimensional integration and a large area easy and which can be applied to a device easily and practically by a method wherein a material to be used as a seed is heat-treated, melted and solidified to form a seed single crystal whose plane orientation has been controlled and the single crystal is grown by using the seed single crystal as the seed. CONSTITUTION:An amorphous silicon film 2 is deposited on a quartz glass substrate 1 by using a low-pressure CVD method; then, the amorphous silicon film 2 is patterned to be spot-like by a photolithographic process. Then, while the substrate 1 is being shifted, a laser beam is scanned and irradiated; an amorphous silicon film 3 is melted and solidified; it is transformed into a silicon single-crystal fine particle 4. If a crystal is grown by using the silicon single- crystal fine particle 4 as a seed, it becomes large single-crystal silicon 5. Because the plane orientation of the single-crystal fine particle used as the seed is uniform, an irregularity of a characteristic of a single device is small; by this setup, it is possible to easily obtain a single crystal which makes the three- dimensional intergration and a large area easy and which can be applied to a device easily and practically.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19868887A JPS6442117A (en) | 1987-08-08 | 1987-08-08 | Crystal growth method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19868887A JPS6442117A (en) | 1987-08-08 | 1987-08-08 | Crystal growth method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6442117A true JPS6442117A (en) | 1989-02-14 |
Family
ID=16395389
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19868887A Pending JPS6442117A (en) | 1987-08-08 | 1987-08-08 | Crystal growth method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6442117A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5176557A (en) * | 1987-02-06 | 1993-01-05 | Canon Kabushiki Kaisha | Electron emission element and method of manufacturing the same |
US5201681A (en) * | 1987-02-06 | 1993-04-13 | Canon Kabushiki Kaisha | Method of emitting electrons |
-
1987
- 1987-08-08 JP JP19868887A patent/JPS6442117A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5176557A (en) * | 1987-02-06 | 1993-01-05 | Canon Kabushiki Kaisha | Electron emission element and method of manufacturing the same |
US5201681A (en) * | 1987-02-06 | 1993-04-13 | Canon Kabushiki Kaisha | Method of emitting electrons |
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