JPS6472569A - Manufacture of photoelectric conversion device - Google Patents
Manufacture of photoelectric conversion deviceInfo
- Publication number
- JPS6472569A JPS6472569A JP62228863A JP22886387A JPS6472569A JP S6472569 A JPS6472569 A JP S6472569A JP 62228863 A JP62228863 A JP 62228863A JP 22886387 A JP22886387 A JP 22886387A JP S6472569 A JPS6472569 A JP S6472569A
- Authority
- JP
- Japan
- Prior art keywords
- photoelectric conversion
- layer
- closed circuit
- manufacturing
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
PURPOSE:To prevent a metal electrode layer during a manufacturing process from corroding by a combination of conventional techniques not by any technique which is difficult to be realized by forming a closed circuit including photoelectric conversion elements of a photoelectric conversion device so as not to generate a potential difference between both electrode layers of the element in the process of manufacturing the device. CONSTITUTION:When at least a photoelectric conversion layer 2 and two electrode layers 3, 4 are laminated on a substrate 1 to manufacture a photoelectric converter DA1 through the processes of forming photoelectric converter element D1, a closed circuit including the element D1 is so formed on the substrate 1 as not to generate a potential difference between the layers 3 and 4 of the element D1 in the processes of manufacturing the converter DA1. For example, an electrode layer 3 made of a thin Cr film, terminals T3, T4 and a connector 6 are simultaneously formed by a photolithography technique on the insulating substrate 1. Then, an amorphous silicon PIN layer of the layer 2 and the electrode layer 4 made of In2O2 are sequentially formed in this order thereon, and a closed circuit C including two photoelectric converter element arrays DA1, DA2 is formed as shown.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62228863A JPS6472569A (en) | 1987-09-11 | 1987-09-11 | Manufacture of photoelectric conversion device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62228863A JPS6472569A (en) | 1987-09-11 | 1987-09-11 | Manufacture of photoelectric conversion device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6472569A true JPS6472569A (en) | 1989-03-17 |
Family
ID=16883063
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62228863A Pending JPS6472569A (en) | 1987-09-11 | 1987-09-11 | Manufacture of photoelectric conversion device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6472569A (en) |
-
1987
- 1987-09-11 JP JP62228863A patent/JPS6472569A/en active Pending
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