JPS577925A - Manufacture of thin film integrated circuit - Google Patents

Manufacture of thin film integrated circuit

Info

Publication number
JPS577925A
JPS577925A JP8323980A JP8323980A JPS577925A JP S577925 A JPS577925 A JP S577925A JP 8323980 A JP8323980 A JP 8323980A JP 8323980 A JP8323980 A JP 8323980A JP S577925 A JPS577925 A JP S577925A
Authority
JP
Japan
Prior art keywords
thin film
mask
sio2
grown
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8323980A
Other languages
Japanese (ja)
Inventor
Masatoshi Kitagawa
Shinichiro Ishihara
Koshiro Mori
Seiichi Nagata
Tsuneo Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP8323980A priority Critical patent/JPS577925A/en
Publication of JPS577925A publication Critical patent/JPS577925A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To continuously form a plurality of thin film circuit elements in a simple process by moving a supporting stand or a mask and selectively forming a plurality of thin film elements on a substrate of the supporting stand. CONSTITUTION:The mask 8 having an opening part 10 is provided on a substrate and P type amorphous Si is grown. Then, the mask is rotated by 90 degrees, and an I type layer is grown. Thereafter, the mask is rotated again to get a status of (c), and an SiO2 film is formed. Under the state (a), an N type layer is grown. A photoelectric conversion element is formed in a P-I-N part, and MOSFET is formed in I-SiO2 part. A P-SiO2-N part and an SiO2-N part are used as a capacitor and a resistor. In this method, a plurality of the thin film circuit elements can be continuously formed without using complex processes which are required for the thin film integrated circuits and the advantage of the one-layer thin film element can be obtained.
JP8323980A 1980-06-18 1980-06-18 Manufacture of thin film integrated circuit Pending JPS577925A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8323980A JPS577925A (en) 1980-06-18 1980-06-18 Manufacture of thin film integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8323980A JPS577925A (en) 1980-06-18 1980-06-18 Manufacture of thin film integrated circuit

Publications (1)

Publication Number Publication Date
JPS577925A true JPS577925A (en) 1982-01-16

Family

ID=13796766

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8323980A Pending JPS577925A (en) 1980-06-18 1980-06-18 Manufacture of thin film integrated circuit

Country Status (1)

Country Link
JP (1) JPS577925A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01212433A (en) * 1988-02-20 1989-08-25 Fujitsu General Ltd Manufacture of thin film semiconductor device
JPH01212457A (en) * 1988-02-20 1989-08-25 Fujitsu General Ltd Thin film hybrid ic device and manufacture thereof
JP2003173972A (en) * 2001-12-04 2003-06-20 Fuji Xerox Co Ltd Method for manufacturing nitride semiconductor element and pattern obtained thereby
WO2019129364A1 (en) * 2017-12-29 2019-07-04 Microsoft Technology Licensing, Llc Fabrication process using vapour deposition through a positioned shadow mask

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5382162A (en) * 1976-12-27 1978-07-20 Fujitsu Ltd Beam epitaxial growth method
JPS5552220A (en) * 1978-10-13 1980-04-16 Fujitsu Ltd Manufacturing of semiconductor intergrated circuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5382162A (en) * 1976-12-27 1978-07-20 Fujitsu Ltd Beam epitaxial growth method
JPS5552220A (en) * 1978-10-13 1980-04-16 Fujitsu Ltd Manufacturing of semiconductor intergrated circuit

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01212433A (en) * 1988-02-20 1989-08-25 Fujitsu General Ltd Manufacture of thin film semiconductor device
JPH01212457A (en) * 1988-02-20 1989-08-25 Fujitsu General Ltd Thin film hybrid ic device and manufacture thereof
JP2003173972A (en) * 2001-12-04 2003-06-20 Fuji Xerox Co Ltd Method for manufacturing nitride semiconductor element and pattern obtained thereby
WO2019129364A1 (en) * 2017-12-29 2019-07-04 Microsoft Technology Licensing, Llc Fabrication process using vapour deposition through a positioned shadow mask
CN111479947A (en) * 2017-12-29 2020-07-31 微软技术许可有限责任公司 Manufacturing process using vapor deposition through a positioned shadow mask
US11629430B2 (en) 2017-12-29 2023-04-18 Microsoft Technology Licensing, Llc Fabrication process using vapour deposition through a positioned shadow mask

Similar Documents

Publication Publication Date Title
JPS5516464A (en) Method of forming wafer for semiconductor device
JPS5350686A (en) Production of semiconductor integrated circuit
JPS577925A (en) Manufacture of thin film integrated circuit
JPS5249772A (en) Process for production of semiconductor device
JPS53114685A (en) Manufacture for semiconductor device
JPS5330283A (en) Production of substrates for semiconductor integrated circuits
JPS542657A (en) Manufacture for semiconductor device
JPS52124860A (en) Electrode formation method for semiconductor devices
JPS5317068A (en) Semiconductor device and its production
JPS52146565A (en) Production of semiconductor device
JPS5386177A (en) Production of semiconductor device
JPS5368165A (en) Production of semiconductor device
JPS5251872A (en) Production of semiconductor device
JPS5397791A (en) Production of semiconductor integrated circuit device
JPS56137617A (en) Semiconductor crystal substrate
JPS53144690A (en) Production of semiconductor device
JPS57118641A (en) Lifting-off method
JPS547867A (en) Manufacture for semiconductor device
JPS5285465A (en) Production of semiconductor device
JPS5287359A (en) Production of semiconductor device
JPS538082A (en) Production of semiconductor device
JPS53143183A (en) Semicondutor integrated circuit device and production of the same
JPS5428580A (en) Manufacture of semiconductor device
JPS53124993A (en) Production of semiconductor device
JPS5323578A (en) Production of mos type integrated circuit device