JPS6467917A - Developing device - Google Patents

Developing device

Info

Publication number
JPS6467917A
JPS6467917A JP22391387A JP22391387A JPS6467917A JP S6467917 A JPS6467917 A JP S6467917A JP 22391387 A JP22391387 A JP 22391387A JP 22391387 A JP22391387 A JP 22391387A JP S6467917 A JPS6467917 A JP S6467917A
Authority
JP
Japan
Prior art keywords
wafer
rotation
vacuum suction
suction stand
speed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22391387A
Other languages
Japanese (ja)
Inventor
Keizo Kuroiwa
Kazunori Nemoto
Tadahide Chiba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP22391387A priority Critical patent/JPS6467917A/en
Publication of JPS6467917A publication Critical patent/JPS6467917A/en
Pending legal-status Critical Current

Links

Landscapes

  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To remove completely moisture remaining in fine recessed parts of the surface of an etched substance, by spraying a high pressure inert gas from a gas nozzle to the surface of the etched substance. CONSTITUTION:When an unnecessary photoresist is removed by a developing treatment, a rinse liquid is discharged from a rinse liquid nozzle 6 to the surface of a wafer 3 and at the same time, an alkali developer that adheres to the surface of the wafer 3 is washed with the rotation of a vacuum suction stand 2 at a prescribed speed. Then, moisture at the surface of the wafer 3 is scattered by centrifugal force with the rotation of the vacuum suction stand 2 at great speed. Subsequently, with the rotation of the vacuum suction stand 2 at a low speed, a driving part 8 is operated to spray a high pressure nitrogen gas to the surface of the wafer 3 while a gas nozzle 7 is repeating reciprocating motion between an interval from the center of the wafer 3 to its peripheral parts at the prescribed speed and moisture remaining at recessed parts of a photoresist pattern is removed completely.
JP22391387A 1987-09-09 1987-09-09 Developing device Pending JPS6467917A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22391387A JPS6467917A (en) 1987-09-09 1987-09-09 Developing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22391387A JPS6467917A (en) 1987-09-09 1987-09-09 Developing device

Publications (1)

Publication Number Publication Date
JPS6467917A true JPS6467917A (en) 1989-03-14

Family

ID=16805673

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22391387A Pending JPS6467917A (en) 1987-09-09 1987-09-09 Developing device

Country Status (1)

Country Link
JP (1) JPS6467917A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017054146A1 (en) * 2015-09-30 2017-04-06 Acm Research (Shanghai) Inc. Apparatus and methods for cleaning wafers

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017054146A1 (en) * 2015-09-30 2017-04-06 Acm Research (Shanghai) Inc. Apparatus and methods for cleaning wafers
CN108140595A (en) * 2015-09-30 2018-06-08 盛美半导体设备（上海）有限公司 Wafer cleaning device and method

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