CN108140595A - Wafer cleaning device and method - Google Patents
Wafer cleaning device and method Download PDFInfo
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- CN108140595A CN108140595A CN201580083409.7A CN201580083409A CN108140595A CN 108140595 A CN108140595 A CN 108140595A CN 201580083409 A CN201580083409 A CN 201580083409A CN 108140595 A CN108140595 A CN 108140595A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Present invention is disclosed a kind of devices (2000,3000,9000) for cleaning encapsulation wafer (1000).Device (2000,3000,9000) includes：Keep the chuck (2001 of at least two wafers (1000), 3001,9001), at least two wafers (1000) and chuck (2001,3001,9001) there is a distance at center, and there are multiple micro-structures (1003) on the surface per wafer (1000)；The driving device (2002,3002,9002) that chuck (2001,3001,9001) is driven to rotate；And it is at least one to wafer (1000) spray fluid to clean or dry the nozzle of wafer (1000) (2003,2004,3003,3004,9003,9004).Present invention further teaches a kind of wafer (1000) cleaning methods.Method includes：In chuck (2001,3001,9001) at least two wafers (1000) are loaded on, at least two wafers (1000) and chuck (2001,3001,9001) there is a distance at center, and there are multiple micro-structures (1003) on the surface per wafer (1000)；Chuck (2001,3001,9001) is driven with a rotational speed；To wafer (1000) spray fluid to clean or dry wafer (1000).
Description
Technical field
By driving chuck with the slow-speed of revolution the present invention relates to wafer cleaning device and method more particularly in cleaning process
The semiconductor structure encapsulated with cleaning wafer grade is alternately rotated with high rotating speed, more thoroughly, efficiently removes welding assisted agent residuals.
Background technology
As the size of semiconductor devices becomes less and less, integrated antenna package technology has evolved to a new rank
Section.The process that one kind is known as wafer-level packaging (WLP) is applied to encapsulation wafer, and have trend to become microelectronics Packaging industry
In one of mainstream technology.WLP techniques and traditional chip package process are entirely different, because in traditional chip package process
In, technique is divided into several steps, for example, cutting several chip units from wafer first, then each chip unit one connects
The encapsulation of one is tested.However in WLP techniques, almost all of subsequent step can be completed once, this causes WLP techniques
More efficiently.
WLP techniques have more advantage, but clean and be challenging using the wafer of WLP techniques encapsulation, because using WLP
The surface of the wafer of technique encapsulation has many chip units, and multiple small knots are formed between two neighboring chip unit
Therefore structure, such as beam, bridge, gap, groove etc., clean the complicated many of crystal column surface that this wafer can be more conventional than cleaning.Total
For, by pollutant from using WLP techniques encapsulation wafer on thoroughly removal there are two it is important the problem of：
(1) high temperature in solder reflow step easily causes the coking of scaling powder so that remaining scaling powder is difficult to be removed；
(2) wafer before being sliced substantially is exactly the conglomerate of a flip-chip, this conglomerate is by convex block and ball bar
Lattice array forms, as size and pattern spacing persistently reduce, more fragile, this imperceptibility of projection cube structure change, and fragilityization
Development trend so that the space that can be cleaned between convex block unit is further narrow, but also thoroughly equably cleaning so it is narrow
Space be faced with the challenge of bigger.
In order to meet Performance And Reliability standard, encapsulation wafer must be without such as scaling powder, fingerprint contamination, water or other tables
Face pollutant, otherwise these pollutants residual will lead to ionic soil and corrosion, it is insufficient and produce so as to cause underfill
The problems such as raw cavity, generation moisture concentration, overheat and partial failure.
Therefore, it is necessary to a kind of improved cleaning systems, thoroughly can equably clean pollutant.
Invention content
A kind of specific embodiment of the present invention, proposes a kind of wafer cleaning device, which includes：Keep at least two panels
There is a distance at the chuck of wafer, at least center of two wafers and chuck, wherein, the surface per wafer has multiple small
Structure；Drive the driving device of chuck rotation；It is at least one to wafer spray fluid to clean or dry the nozzle of wafer；Its
In, driving device driving chuck is alternately rotated in cleaning process with the slow-speed of revolution and high rotating speed, wherein, slow-speed of revolution Nl is less than and faces
Boundary's rotating speed, high rotating speed be higher than critical speed, critical speed by between brilliant diameter of a circle, wafer and chuck hub the shortest distance,
The height of crystal column surface micro-structure, time, fluid density and the surface tension of liquid coefficient of chuck rotation determine.
A kind of specific embodiment of the present invention, proposes a kind of method for cleaning wafer, this method includes：It is brilliant to incite somebody to action at least two panels
Circle is loaded on chuck, which has a distance, wherein, the surface per wafer has multiple
Micro-structure；Drive chuck rotation；To wafer spray fluid to clean or dry wafer, wherein, chuck in cleaning process with
The slow-speed of revolution and high rotating speed alternately rotate, wherein, slow-speed of revolution Nl be less than critical speed, high rotating speed be higher than critical speed, critical turn
Speed by between brilliant diameter of a circle, wafer and chuck hub the shortest distance, the height of crystal column surface micro-structure, chuck rotation
Time, fluid density and surface tension of liquid coefficient determine.
A kind of specific embodiment of the present invention, proposes another method for cleaning wafer, and this method includes：From wafer cassette
Take out at least two wafers and by at least two panels wafer load on the chuck in process cavity, at least two wafers with
There is a distance at the center of chuck, wherein, there are multiple micro-structures on the surface per wafer；Drive chuck rotation；It is sprayed to wafer
Fluid is spilt to clean or dry wafer, wherein, chuck is alternately rotated in cleaning process with the slow-speed of revolution and high rotating speed, wherein,
Slow-speed of revolution Nl be less than critical speed, high rotating speed be higher than critical speed, critical speed by brilliant diameter of a circle, wafer and chuck hub it
Between the shortest distance, the height of crystal column surface micro-structure, chuck rotation time, fluid density and surface tension of liquid system
Number determines.
Description of the drawings
Figure 1A -1B are a kind of specific embodiments using the wafer of WLP techniques encapsulation；
Fig. 2 is a kind of specific embodiment of wafer cleaning device；
Fig. 3 A-3B are another specific embodiments of wafer cleaning device；
Fig. 4 A-4C are a kind of specific embodiments for the chuck for carrying wafer；
Fig. 5 A-5B are another specific embodiments for the chuck for carrying wafer；
Fig. 6 A-6B are a kind of specific embodiments of clamping element；
Fig. 7 is a kind of specific embodiment for fixing the positioning pin of wafer；
Fig. 8 is another specific embodiment for fixing the positioning pin of wafer；
Fig. 9 A-9C are another specific embodiments of wafer cleaning device；
Figure 10 is a kind of flow chart of method for cleaning wafer；
Figure 11 illustrates the method for cleaning wafer in Figure 10；
Figure 12 is the flow chart of another method for cleaning wafer；
Figure 13 illustrates the method for cleaning wafer in Figure 12.
Specific embodiment
Figure 1A -1B are a kind of specific embodiments using the wafer of WLP techniques encapsulation.Figure 1A is shown using WLP works
The vertical view of the wafer 1000 of skill encapsulation, Figure 1B show the cross-sectional view of the wafer 1000 in Figure 1A.Wafer 1000 is (so-called
Wafer-level packaging wafer) surface 1002 there are many chip unit 1001, have between adjacent chip unit 1001 multiple small
Structure 1003, micro-structure 1003 include but are not limited to beam, bridge, gap, groove etc..Chip unit 1001 usually has certain
Highly, the height of " h " of small letter for chip unit 1001 in Figure 1B.Due to complicated micro-structure 1003, sealed using WLP techniques
The wafer 1000 of dress is difficult cleaning, however, in the following detailed description, the present invention will provide a kind of cleaning wafer 1000
Device.
Fig. 2 is a kind of specific embodiment of wafer cleaning device of the present invention.Device 2000 includes：Carry at least two platelets
The chuck 2001 of circle 1000 has a distance per wafer 1000 with the center of chuck 2001, and the surface 1002 per wafer has
Multiple micro-structures 1003；Driving device 2002 is connected with chuck 2001 and chuck 2001 is driven to rotate；At least one top nozzle
For spray fluid to clean or dry the wafer on chuck 2001.In one embodiment, fluid can be deionized water,
Cleaning solution, gas or steam.In one embodiment, altogether there are two top nozzle in Fig. 2, a sprinkling of nozzle 2003 go from
Sub- water, cleaning solution spray gas or steam to dry wafer 1000 with cleaning wafer 1000, another nozzle 2004.
Driving device 2002 drives chuck 2001 alternately to be rotated with the slow-speed of revolution and high rotating speed in cleaning process, wherein,
Slow-speed of revolution Nl be less than critical speed, high rotating speed be higher than critical speed, critical speed by brilliant diameter of a circle, wafer and chuck hub it
Between the shortest distance, the height of crystal column surface micro-structure, chuck rotation time, fluid density and surface tension of liquid system
Number determines.
According to a kind of specific embodiment, slow-speed of revolution Nl is less than critical speed
High rotating speed Nh is higher than critical speed
Wherein, D is the diameter of wafer 1000, and the shortest distances of the r between 2001 center of wafer 1000 and chuck, h is crystalline substance
The height of micro-structure 1003 on circle 1000, t are the time that chuck 2001 rotates, and ρ is fluid density (for example, liquid is close
Degree), σ is surface tension of liquid coefficient (for example, liquid surface tension coefficient).
In cleaning process, in order to thoroughly, equably clean pollutant, the rotating speed of chuck 2001 should be controlled well
System.Alternately it is applied to chuck in cleaning process middle and slow speed of revolution and high rotating speed.When using the slow-speed of revolution, what nozzle 2003 sprayed goes
Ionized water or cleaning solution can readily flow through micro-structure 1003 and uniformly cover crystal column surface 1002, use high rotating speed
Before, deionized water or cleaning solution can stay for some time in crystal column surface 1002, make deionized water or cleaning solution at this section
Between thorough dissolved contaminants.Further, centrifugal force can be generated when using high rotating speed, and centrifugal force is sufficiently strong to overcome liquid
Deionized water or cleaning solution are pulled away from 1000 surface of wafer by surface tension, centrifugal force, and pollutant is with deionized water or cleaning solution
It takes away.Therefore, device 2000 can provide thorough, uniform pollutant cleaning.
Fig. 3 A-3B are another specific embodiments of wafer cleaning device.Device 3000 includes：Carry at least two platelets
The chuck 3001 of circle 1000, there is a distance at least two wafers 1000 and the center of chuck 3001, per platelet circular surfaces
1002 have multiple micro-structures 1003；Driving device 3002 is connected with chuck 3001 and chuck 3001 is driven to rotate；It is at least one
Top nozzle is used to 1000 spray fluid of wafer cleaning or drying wafer 1000.In one embodiment, fluid can be
Deionized water, cleaning solution, gas or steam.In one embodiment, there are two top nozzle, a nozzles altogether in Fig. 3
With cleaning wafer 1000, another nozzle 3004 sprays gas or steam to dry wafer for 3003 sprinkling deionized waters, cleaning solution
1000.Device 3000 further includes at least one ultrasonic wave or mega sonic wave device 3005 positioned at 3001 top of chuck.Work as nozzle
When 3003 sprinkling deionized waters, cleaning solution, gas or steam are to clean the wafer being loaded on chuck 3001, ultrasonic wave or million sound
Ultrasonic wave or megasonic energy can be applied to cleaning wafer 1000 by wave apparatus 3005.
Driving device 3002 drives chuck 3001 alternately to be rotated with the slow-speed of revolution and high rotating speed in cleaning process, wherein,
Slow-speed of revolution N1 be less than critical speed, high rotating speed be higher than critical speed, critical speed by brilliant diameter of a circle, wafer and chuck hub it
Between the shortest distance, the height of crystal column surface micro-structure, chuck rotation time, fluid density and surface tension of liquid system
Number determines.
According to a kind of specific embodiment, slow-speed of revolution N1 is less than critical speed
High rotating speed Nh is higher than critical speed
Wherein, D is the diameter of wafer 1000, and the shortest distances of the r between 3001 center of wafer 1000 and chuck, h is crystalline substance
Circle 1000 on micro-structure 1003 height, t be chuck 3001 rotate time, ρ be fluid density (for example, fluid density), σ
For surface tension of liquid coefficient (for example, liquid surface tension coefficient).
Correspondingly, in a kind of specific embodiment of the present invention, chuck 3001 carries at least two panels by vacuum suction
Wafer 1000.Fig. 4 A-4C are a kind of specific embodiments for the chuck 3001 for carrying wafer 1000, and Fig. 4 A, which are shown, passes through vacuum
The vertical view of the fixed at least chuck 3001 of two panels wafer 1000 of absorption, Fig. 4 B show the chuck 3001 that does not carry wafer
Vertical view, Fig. 4 C show the cross-sectional view of chuck 3001.Chuck 3001 includes at least two independent gas pipelines 3006, often
Gas pipeline 3006 is used to wafer 1000 being fixed on chuck 3001, every gas pipeline 3006 by vacuum suction
It is independently controlled and is independent of each other.
Correspondingly, in a kind of specific embodiment of the present invention, another chuck is provided.Fig. 5 A-5B are that carrying is brilliant
Another specific embodiment of round chuck, is fixed with wafer 1000 on the chuck 4001 in Fig. 5 A, the chuck in Fig. 5 B
There is no wafer 1000 on 4001.Chuck 4001 includes at least two groups of support elements 4002, and every group of support element 4002 includes a positioning
4003 and at least three clamping element 4004 of pin is to fix wafer 1000.One 4003 and at least three clamping element of positioning pin
4004 are evenly distributed on the surrounding of wafer 1000, and positioning pin 4003 is located most closely to the position at 4001 center of chuck.
Fig. 6 A-6B are a kind of specific embodiments of clamping element.Clamping element 4004 includes base portion 4005 and movable part 4006,
Movable part 4006 is movably arranged on base portion 4005, and when implementing external force to movable part 4006, movable part 4006 carrys out backswing
It is dynamic.When chuck 4001 rotates, the centrifugal force of generation is applied to as external force on movable part 4006, in this case, activity
The bottom in portion 4006 rises, and the top of movable part 4006 declines so that pushes down the surface of wafer 1000 in the top of movable part 4006
And apply lower pressure to wafer 1000, at this under the action of lower pressure, wafer 1000 is clamped part 4004 and clamps.If on the contrary,
4001 remains stationary of chuck, movable part 4006 will be kept vertically under the action of centrifugal force, and wafer is moved convenient for manipulator
1000。
Fig. 7 is a kind of specific embodiment for fixing the positioning pin of wafer.In 4001 rotation process of chuck,
The positioning pin 4003 works to prevent wafer 1000 from moving with clamping element 4,004 1.The shape of positioning pin 4003 is random, such as
A kind of specific embodiment of the present invention shown in Fig. 7, the shape of positioning pin 4003a is cuboid.The present invention as shown in Figure 8
Another specific embodiment, the shape of positioning pin 4003b is cylinder.
Fig. 9 A-9C are another specific embodiments of wafer cleaning device.Device 9000 includes：Carry at least two platelets
The chuck 9001 of circle 1000, it is preferred that chuck 9001 carries four or six wafers 1000.If chuck carries too many wafer
1000, the size needs of chuck 9001 are sufficiently large so that chuck 9001 is difficult to rotate.Four or six wafers 1000 and chuck 9001
Center have a distance, have multiple micro-structures 1003 per the surface 1002 of wafer.Driving device 9002 and chuck 9001
It is connected and chuck 9001 is driven to rotate.At least one top nozzle is used to spray deionized water, cleaning solution, gas or steam to clean
Or the dry wafer 1000 being carried on chuck 9001.In one embodiment, top nozzle there are two being had altogether in Fig. 9 A, one
Nozzle 9003 sprays deionized water, cleaning solution with cleaning wafer 1000, another nozzle 9004 sprinkling gas or steam are with drying
Wafer 1000.Nozzle 9003 and nozzle 9004 are located at the top of chuck 9001, and two nozzles are all that can be rotated simultaneously around rotation axis
Difference sprinkling deionized water, cleaning solution, gas or the sweep type nozzle of steam or oscillating-type nozzle on wafer 1000.
In a kind of specific embodiment, device 9000 further includes at least one side nozzle 9006 positioned at the side per wafer 1000,
The spout 9007 that side nozzle 9006 has multiple linear arrays and is mutually parallel, for spray fluid cleaning or dry wafer 1000.
Device 9000 further includes at least one ultrasonic wave or mega sonic wave device 9005 positioned at 9001 top of chuck, when nozzle 9003 sprays
When deionized water, cleaning solution, gas or steam are to clean the wafer being loaded on chuck 9001, ultrasonic wave or mega sonic wave device
9005 can be applied to cleaning wafer 1000 ultrasonic wave or megasonic energy.
Driving device 9002 drives chuck 9001 alternately to be rotated with the slow-speed of revolution and high rotating speed in cleaning process, wherein,
Slow-speed of revolution Nl be less than critical speed, high rotating speed be higher than critical speed, critical speed by brilliant diameter of a circle, wafer and chuck hub it
Between the shortest distance, the height of crystal column surface micro-structure, chuck rotation time, fluid density and surface tension of liquid system
Number determines.
According to a kind of specific embodiment, slow-speed of revolution Nl is less than critical speed
High rotating speed Nh is higher than critical speed
Wherein, D is the diameter of wafer 1000, and the shortest distances of the r between 9001 center of wafer 1000 and chuck, h is crystalline substance
Circle 1000 on micro-structure 1003 height, t be chuck 9001 rotate time, ρ be fluid density (for example, fluid density), σ
For surface tension of liquid coefficient (for example, liquid surface tension coefficient).
In cleaning process, rotating speed sufficiently high must overcome surface tension of liquid to generate centrifugal force, and centrifugal force will
Cause the centripetal acceleration of radial direction.According to Newton's second law, the following formula can be obtained：
Fc-Fs=mac
(1)；
Wherein, FcFor centrifugal force, FsFor surface tension of liquid, m is liquid quality, acFor centripetal acceleration.As Fig. 9 C, D are
The diameter of wafer 1000, the shortest distances of the r between 9001 center of wafer 1000 and chuck, h are micro-structure on wafer 1000
1003 height, ω are the angular speed of chuck 9001.According to formula (1), critical speed N can be calculated：
Wherein, t is the rotation time of chuck 9001, and ρ is fluid density, and σ is surface tension of liquid coefficient.
In a kind of specific embodiment, rotation time t=1s, brilliant diameter of a circle A=B=300mm, micro-structure 1003
H=40 μm of height, the shortest distance r=100mm between 9001 center of wafer 1000 and chuck, liquid is deionized water, close
Spend ρ=1000kg/m3, liquid surface tension coefficient σ=0.0727N/m of the deionized water at 20 DEG C, so critical speed N=
1181RPM。
Figure 10 is a kind of flow chart of method for cleaning wafer.Figure 11 illustrates the method for cleaning wafer in Figure 10.According to upper
Specific embodiment is stated, method for cleaning wafer can set as follows：
Processing step：
Step 1：At least two wafers 1000 are loaded on chuck 1101, at least two wafers 1000 and chuck 1101
There is a distance at center, and there are multiple micro-structures 1003 on the surface 1002 per wafer 1000；
Step 2：Driving chuck 1101 rotates；
Step 3：To 1000 spray fluid of wafer to clean or dry wafer 1000；
Wherein, in cleaning process, chuck 1101 is alternately rotated with the slow-speed of revolution and high rotating speed, wherein, slow-speed of revolution Nl is low
In critical speed, high rotating speed is higher than critical speed,
Wherein, critical speed by between 1101 center of the diameter of wafer 1000, wafer 1000 and chuck the shortest distance, crystalline substance
The height of circular surfaces micro-structure, time, fluid density and the surface tension of liquid coefficient of chuck rotation determine.
According to a kind of specific embodiment, critical speed is：
Wherein, D is brilliant diameter of a circle, r is the shortest distance between wafer and chuck hub, h is micro-structure on wafer
Height, t be chuck rotation time, ρ be fluid density, σ is surface tension of liquid coefficient.
In a kind of specific embodiment, this method is further comprising the steps of：During to 1002 spray fluid of crystal column surface, make
With ultrasonic wave or megasonic energy cleaning wafer 1000；Deionized water, cleaning are included by the fluid that at least one nozzle sprays
Liquid, gas or steam.
Figure 12 is the flow chart of another method for cleaning wafer.Figure 13 illustrates the method for cleaning wafer in Figure 12.According to
Above-mentioned specific embodiment, another method for cleaning wafer can set as follows：
Processing step：
Step 1：At least two wafers 1000 are taken out from wafer cassette 1302 and wafer 1000 is loaded in positioned at process cavity
On chuck 1301 in 1300, there is a distance at least two wafers 1000 and the center of chuck 1301, per wafer 1000
Surface 1002 have multiple micro-structures 1003；
Step 2：Driving chuck 1301 rotates；
Step 3：To 1000 spray fluid of wafer to clean or dry wafer 1000；
Wherein, in cleaning process, chuck 1301 is alternately rotated with the slow-speed of revolution and high rotating speed, wherein, slow-speed of revolution Nl is low
In critical speed, high rotating speed is higher than critical speed,
Wherein, critical speed by between 1301 center of the diameter of wafer 1000, wafer 1000 and chuck the shortest distance, crystalline substance
The height of 1002 micro-structure 1003 of circular surfaces, time, fluid density and the surface tension of liquid coefficient of chuck rotation determine.
According to a kind of specific embodiment, critical speed is：
Wherein, D is the diameter of wafer 1000, r is the shortest distance between 1301 center of wafer 1000 and chuck, h is brilliant
The height of micro-structure 1003, t are the time of the rotation of chuck 1301 on circle 1000, ρ is fluid density, σ is surface tension of liquid
Coefficient.
In a kind of specific embodiment, this method is further comprising the steps of：During to crystal column surface spray fluid, using super
Sound wave or megasonic energy cleaning wafer；The fluid sprayed by least one nozzle include deionized water, cleaning solution, gas or
Steam.
Although the present invention with specific embodiment, citing, using illustrating, in the art obviously change and replace
It changes commanders and still falls into protection scope of the present invention.
Claims (21)
1. a kind of wafer cleaning device, which is characterized in that including：
Chuck is configured as keeping at least two wafers, which has a distance, per platelet
There are multiple micro-structures on round surface；
Driving device is configured as driving chuck rotation；
At least one nozzle is configured as to wafer spray fluid cleaning or drying wafer；
Wherein, driving device driving chuck is alternately rotated in cleaning process with the slow-speed of revolution and high rotating speed, wherein, slow-speed of revolution Nl
Less than critical speed, high rotating speed is higher than critical speed,
Wherein, critical speed by between brilliant diameter of a circle, wafer and chuck hub the shortest distance, crystal column surface micro-structure
Highly, time, fluid density and the surface tension of liquid coefficient of chuck rotation determine.
2. the apparatus according to claim 1, which is characterized in that critical speed is defined as：
Wherein, D is brilliant diameter of a circle, r is the shortest distance between wafer and chuck hub, the height that h is micro-structure on wafer
Degree, t are the time of chuck rotation, ρ is fluid density, σ is surface tension of liquid coefficient.
3. the apparatus according to claim 1, which is characterized in that the fluid sprayed by least one nozzle is deionization
Water, cleaning solution, gas or steam.
4. the apparatus according to claim 1, which is characterized in that chuck includes at least two groups of support elements, every group of support element packet
A positioning pin and at least three clamping elements are included to fix wafer.
5. device according to claim 4 a, which is characterized in that positioning pin and at least three folders in every group of support element
Tight part is evenly distributed in wafer surrounding, and positioning pin is located most closely to the position of chuck hub.
6. device according to claim 4, which is characterized in that clamping element includes base portion and movable part, and movable part is movable
Be mounted on base portion on, swing back and forth when movable part is by external force.
7. the apparatus according to claim 1, which is characterized in that chuck fixes at least two panels wafer by vacuum suction.
8. the apparatus according to claim 1, which is characterized in that chuck include at least two independent gas pipelines, every
Gas pipeline is used to wafer being fixed on chuck by vacuum suction.
9. the apparatus according to claim 1, which is characterized in that micro-structure includes beam, bridge, gap or groove.
10. the apparatus according to claim 1, which is characterized in that wafer is wafer-level packaging wafer.
11. the apparatus according to claim 1, which is characterized in that chuck keeps four or six wafers.
12. the apparatus according to claim 1, which is characterized in that nozzle is mounted on the top of chuck.
13. the apparatus according to claim 1, which is characterized in that further comprise being located at the top nozzle above chuck, upper spray
Mouth is sweep type nozzle or oscillating-type nozzle.
14. the apparatus according to claim 1, which is characterized in that further comprise positioned at the side per wafer at least
One side nozzle, side nozzle have multiple linear arrays and the spout being mutually parallel, for spray fluid cleaning or dry wafer.
15. the apparatus according to claim 1, which is characterized in that further comprise that at least one chuck top that is located at is used for
The ultrasonic wave of cleaning wafer or mega sonic wave device.
16. a kind of method for cleaning wafer, which is characterized in that including：
At least two wafers are loaded on chuck, which has a distance, per wafer
There are multiple micro-structures on surface；
Drive chuck rotation；
To wafer spray fluid to clean or dry wafer；
Wherein, in cleaning process, chuck is alternately rotated with the slow-speed of revolution and high rotating speed, wherein, slow-speed of revolution Nl is less than critical turn
Speed, high rotating speed are higher than critical speed,
Wherein, critical speed by between brilliant diameter of a circle, wafer and chuck hub the shortest distance, crystal column surface micro-structure
Highly, time, fluid density and the surface tension of liquid coefficient of chuck rotation determine.
17. according to the method for claim 16, which is characterized in that critical speed is defined as：
Wherein, D is brilliant diameter of a circle, r is the shortest distance between wafer and chuck hub, the height that h is micro-structure on wafer
Degree, t are the time of chuck rotation, ρ is fluid density, σ is surface tension of liquid coefficient.
18. according to the method for claim 16, which is characterized in that further comprise the steps：
During to crystal column surface spray fluid, ultrasonic wave or megasonic energy cleaning wafer are used；
Deionized water, cleaning solution, gas or steam are included by the fluid that at least one nozzle sprays.
19. a kind of method for cleaning wafer, which is characterized in that including：
At least two wafers are taken out from wafer cassette and by wafer load on the chuck in process cavity, at least two platelets
There is a distance at the center of circle and chuck, and there are multiple micro-structures on the surface per wafer；
Drive chuck rotation；
To wafer spray fluid to clean or dry wafer；
Wherein, in cleaning process, chuck is alternately rotated with the slow-speed of revolution and high rotating speed, wherein, slow-speed of revolution Nl is less than critical turn
Speed, high rotating speed are higher than critical speed,
Wherein, critical speed by between brilliant diameter of a circle, wafer and chuck hub the shortest distance, crystal column surface micro-structure
Highly, time, fluid density and the surface tension of liquid coefficient of chuck rotation determine.
20. according to the method for claim 19, which is characterized in that critical speed is defined as：
Wherein, D is brilliant diameter of a circle, r is the shortest distance between wafer and chuck hub, the height that h is micro-structure on wafer
Degree, t are the time of chuck rotation, ρ is fluid density, σ is surface tension of liquid coefficient.
21. according to the method for claim 19, which is characterized in that further comprise the steps：
During to crystal column surface spray fluid, ultrasonic wave or megasonic energy cleaning wafer are used；
Deionized water, cleaning solution, gas or steam are included by the fluid that at least one nozzle sprays.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2015/091150 WO2017054146A1 (en) | 2015-09-30 | 2015-09-30 | Apparatus and methods for cleaning wafers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108140595A true CN108140595A (en) | 2018-06-08 |
Family
ID=58422637
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201580083409.7A Pending CN108140595A (en) | 2015-09-30 | 2015-09-30 | Wafer cleaning device and method |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN108140595A (en) |
| WO (1) | WO2017054146A1 (en) |
Cited By (7)
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| CN109304318A (en) * | 2018-11-30 | 2019-02-05 | 上海华力微电子有限公司 | A kind of wafer cleaning device and cleaning method |
| CN109427548A (en) * | 2017-08-31 | 2019-03-05 | 株式会社斯库林集团 | Substrate processing method using same and substrate board treatment |
| CN109686696A (en) * | 2018-12-27 | 2019-04-26 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | A kind of chuck assembly |
| CN109701930A (en) * | 2018-11-30 | 2019-05-03 | 南安市博铭工业设计有限公司 | Reduce the wafer cleaning bearing device of scratch and washmarking |
| CN110624893A (en) * | 2019-09-25 | 2019-12-31 | 上海华力集成电路制造有限公司 | Megasonic wave combined gas spray cleaning device and application thereof |
| CN111180312A (en) * | 2019-12-31 | 2020-05-19 | 贵州振华风光半导体有限公司 | Reflow soldering cleaning method suitable for integrated circuit |
| CN112871811A (en) * | 2019-11-29 | 2021-06-01 | 长鑫存储技术有限公司 | Single wafer cleaning system and method |
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| TWI766105B (en) * | 2017-09-28 | 2022-06-01 | 美商魯道夫科技股份有限公司 | Wafer-level package assembly handling |
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| CN110624893B (en) * | 2019-09-25 | 2022-06-14 | 上海华力集成电路制造有限公司 | Megasonic wave combined gas spray cleaning device and application thereof |
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| CN112871811B (en) * | 2019-11-29 | 2023-03-14 | 长鑫存储技术有限公司 | Single wafer cleaning system and method |
| CN111180312A (en) * | 2019-12-31 | 2020-05-19 | 贵州振华风光半导体有限公司 | Reflow soldering cleaning method suitable for integrated circuit |
| CN111180312B (en) * | 2019-12-31 | 2023-08-11 | 贵州振华风光半导体股份有限公司 | Reflow soldering cleaning method suitable for integrated circuit |
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| WO2017054146A1 (en) | 2017-04-06 |
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