JPS5572040A - Method for pattern formation - Google Patents

Method for pattern formation

Info

Publication number
JPS5572040A
JPS5572040A JP14749578A JP14749578A JPS5572040A JP S5572040 A JPS5572040 A JP S5572040A JP 14749578 A JP14749578 A JP 14749578A JP 14749578 A JP14749578 A JP 14749578A JP S5572040 A JPS5572040 A JP S5572040A
Authority
JP
Japan
Prior art keywords
etched
sent
etching
cassette
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14749578A
Other languages
Japanese (ja)
Inventor
Mitsuru Yamada
Yukio Uehara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14749578A priority Critical patent/JPS5572040A/en
Publication of JPS5572040A publication Critical patent/JPS5572040A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To form a fine pattern by switching a dry etching to a wet etching on the way.
CONSTITUTION: An object 3 to be etched, which is holding in a cassette 20, is sent into a room 11 facing up the surface of object 3b on which a patterning is made by a regist film 3c and contacting the base 3a on the conveyor 19, and it is etched first by gas plasma. Further it is sent to a next room 16 in a state of some material 3b being lefted in the around of pattern. After it was cooled, it is etched by etching solution which is sprayed from jet nozzles 18 when it passes the place, and then it is sent to the cassette 21. A fine etching is obtained by this constitution using advantages of dry and wet etchings.
COPYRIGHT: (C)1980,JPO&Japio
JP14749578A 1978-11-25 1978-11-25 Method for pattern formation Pending JPS5572040A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14749578A JPS5572040A (en) 1978-11-25 1978-11-25 Method for pattern formation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14749578A JPS5572040A (en) 1978-11-25 1978-11-25 Method for pattern formation

Publications (1)

Publication Number Publication Date
JPS5572040A true JPS5572040A (en) 1980-05-30

Family

ID=15431670

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14749578A Pending JPS5572040A (en) 1978-11-25 1978-11-25 Method for pattern formation

Country Status (1)

Country Link
JP (1) JPS5572040A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1992007376A1 (en) * 1990-10-19 1992-04-30 Integrated Process Equipment Corporation Semiconductor processing apparatus and method
US5135608A (en) * 1989-07-11 1992-08-04 Hitachi, Ltd. Method of producing semiconductor devices
US5200017A (en) * 1989-02-27 1993-04-06 Hitachi, Ltd. Sample processing method and apparatus
EP0751552A1 (en) * 1989-02-27 1997-01-02 Hitachi, Ltd. Sample processing apparatus
US6036816A (en) * 1989-02-27 2000-03-14 Hitachi, Ltd. Apparatus for processing a sample having a metal laminate

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5200017A (en) * 1989-02-27 1993-04-06 Hitachi, Ltd. Sample processing method and apparatus
EP0751552A1 (en) * 1989-02-27 1997-01-02 Hitachi, Ltd. Sample processing apparatus
US6036816A (en) * 1989-02-27 2000-03-14 Hitachi, Ltd. Apparatus for processing a sample having a metal laminate
US6254721B1 (en) 1989-02-27 2001-07-03 Hitachi, Ltd. Method and apparatus for processing samples
US6537417B2 (en) 1989-02-27 2003-03-25 Hitachi, Ltd. Apparatus for processing samples
US6537415B2 (en) 1989-02-27 2003-03-25 Hitachi, Ltd. Apparatus for processing samples
US6656846B2 (en) 1989-02-27 2003-12-02 Hitachi, Ltd. Apparatus for processing samples
US5135608A (en) * 1989-07-11 1992-08-04 Hitachi, Ltd. Method of producing semiconductor devices
WO1992007376A1 (en) * 1990-10-19 1992-04-30 Integrated Process Equipment Corporation Semiconductor processing apparatus and method
US5227001A (en) * 1990-10-19 1993-07-13 Integrated Process Equipment Corporation Integrated dry-wet semiconductor layer removal apparatus and method

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