JPS6464354A - Mos-type solid-state image sensing device - Google Patents

Abstract

PURPOSE:To provide a capacitance element to be formed by the small number of production processes by providing the capacitance element where an end on one side of mutually facing counter end faces is formed by a polysilicon layer for gate electrode use, an end one the other side is formed by a first metal layer and one part or a whole face of an upper face of the counter end faces is covered with a second metal layer. CONSTITUTION:Four conductor layers 13a, 13b, 13c, 13d composed of a first metal layer are deposited on an upper face of a polysilicon layer 12 formed on an upper face of a field oxide film layer; one end each of them is connected to connection parts 14a, 14b, 14c, 14d composed of a second metal layer. One end of the polysilicon layer 12 is connected to a circuit of a block 8; the connection part 14a is connected to the circuit of the block 8. That is to say, the polysilicon layer 12 forms the end on one side of a capacitance element; the conductor layers 13a, 13b, 13c, 13d form one end each on the other side; if two or more conductor layers 13a, 13b, 13c, 13d are connected, the capacitance element of large capacitance is formed.