JPS6461307A - Production of beta-type silicon carbide fine powder - Google Patents

Production of beta-type silicon carbide fine powder

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Publication number
JPS6461307A
JPS6461307A JP62216067A JP21606787A JPS6461307A JP S6461307 A JPS6461307 A JP S6461307A JP 62216067 A JP62216067 A JP 62216067A JP 21606787 A JP21606787 A JP 21606787A JP S6461307 A JPS6461307 A JP S6461307A
Authority
JP
Japan
Prior art keywords
fine powder
beta
production
silicon carbide
reaction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62216067A
Other languages
Japanese (ja)
Inventor
Satoru Takenaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ibiden Co Ltd
Original Assignee
Ibiden Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibiden Co Ltd filed Critical Ibiden Co Ltd
Priority to JP62216067A priority Critical patent/JPS6461307A/en
Publication of JPS6461307A publication Critical patent/JPS6461307A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To obtain the titled high-purity fine powder with enhanced productivity, free from sticking to the reaction tube wall, by reaction of an organosilicon compound of specific structure with a carrier gas consisting chiefly of H2 followed by heat treatment of the resulting powder. CONSTITUTION:An organosilicon compound of structural formula R-SiHnX3-n (R is CH3 or C2H5; X is Cl; n is 1 or 2) (e.g. CH3SiHCl2) is incorporated into a carrier gas with a H2 content of >=95wt.% followed by introduction into a reaction tube with its center temperature kept at 800-1,200 deg.C to carry out a gaseous phase chemical reaction. The resultant powder is heat-treated at 1,200-2,200 deg.C under normal pressure in a nonoxidative atmosphere (e.g. Ar), thus obtaining the objective fine powder.
JP62216067A 1987-08-29 1987-08-29 Production of beta-type silicon carbide fine powder Pending JPS6461307A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62216067A JPS6461307A (en) 1987-08-29 1987-08-29 Production of beta-type silicon carbide fine powder

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62216067A JPS6461307A (en) 1987-08-29 1987-08-29 Production of beta-type silicon carbide fine powder

Publications (1)

Publication Number Publication Date
JPS6461307A true JPS6461307A (en) 1989-03-08

Family

ID=16682752

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62216067A Pending JPS6461307A (en) 1987-08-29 1987-08-29 Production of beta-type silicon carbide fine powder

Country Status (1)

Country Link
JP (1) JPS6461307A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2666799A1 (en) * 1990-09-13 1992-03-20 Rhone Poulenc Chimie Preparation of silicon carbide by a gas route in the presence of an additive
FR2666798A1 (en) * 1990-09-13 1992-03-20 Rhone Poulenc Chimie Process for the preparation, via the gas route, of a metal carbide, especially silicon carbide, in a silicon carbide reactor
FR2666797A1 (en) * 1990-09-13 1992-03-20 Rhone Poulenc Chimie Process for the preparation, via the gas route, of a metal carbide, especially silicon carbide
JPH06239609A (en) * 1992-11-23 1994-08-30 Cvd Inc New light transmitting independent beta-sic and preparation thereof
JPH07206418A (en) * 1994-01-24 1995-08-08 Korea Advanced Inst Of Sci Technol Preparation of beta type silicon carbide fine powder by pyrolysis of trisilaalkane compound
JP2020124656A (en) * 2019-02-01 2020-08-20 一般財団法人ファインセラミックスセンター Gas separation material and manufacturing method for the same

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2666799A1 (en) * 1990-09-13 1992-03-20 Rhone Poulenc Chimie Preparation of silicon carbide by a gas route in the presence of an additive
FR2666798A1 (en) * 1990-09-13 1992-03-20 Rhone Poulenc Chimie Process for the preparation, via the gas route, of a metal carbide, especially silicon carbide, in a silicon carbide reactor
FR2666797A1 (en) * 1990-09-13 1992-03-20 Rhone Poulenc Chimie Process for the preparation, via the gas route, of a metal carbide, especially silicon carbide
JPH06239609A (en) * 1992-11-23 1994-08-30 Cvd Inc New light transmitting independent beta-sic and preparation thereof
JPH07206418A (en) * 1994-01-24 1995-08-08 Korea Advanced Inst Of Sci Technol Preparation of beta type silicon carbide fine powder by pyrolysis of trisilaalkane compound
JP2020124656A (en) * 2019-02-01 2020-08-20 一般財団法人ファインセラミックスセンター Gas separation material and manufacturing method for the same

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