JPS6483510A - Production of beta type silicon carbide powder - Google Patents

Production of beta type silicon carbide powder

Info

Publication number
JPS6483510A
JPS6483510A JP62243450A JP24345087A JPS6483510A JP S6483510 A JPS6483510 A JP S6483510A JP 62243450 A JP62243450 A JP 62243450A JP 24345087 A JP24345087 A JP 24345087A JP S6483510 A JPS6483510 A JP S6483510A
Authority
JP
Japan
Prior art keywords
beta type
fine powder
production
silicon carbide
type silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62243450A
Other languages
Japanese (ja)
Inventor
Satoru Takenaka
Toshikazu Amino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ibiden Co Ltd
Original Assignee
Ibiden Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibiden Co Ltd filed Critical Ibiden Co Ltd
Priority to JP62243450A priority Critical patent/JPS6483510A/en
Publication of JPS6483510A publication Critical patent/JPS6483510A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To obtain high-purity beta type SiC fine powder inexpensively and efficiently, by thermally decomposing an organosilicon compound with a specific gas and heat-treating the obtained fine powder. CONSTITUTION:An organosilicon compound shown by formula I (R is CH3 or C2H5; X is Cl; n is 1-2) and a carrier gas containing >=95wt.% hydrocarbon gas shown by formula II such as methane are introduced into a reaction system and chemically reacted in a gas phase at 800-1,200 deg.C to give fine powder. Then the powder is heat-treated at 1,200-2,200 deg.C to produce beta type SiC fine powder having >=95wt.% purity and 1-6m<2>/g specific surface area.
JP62243450A 1987-09-28 1987-09-28 Production of beta type silicon carbide powder Pending JPS6483510A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62243450A JPS6483510A (en) 1987-09-28 1987-09-28 Production of beta type silicon carbide powder

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62243450A JPS6483510A (en) 1987-09-28 1987-09-28 Production of beta type silicon carbide powder

Publications (1)

Publication Number Publication Date
JPS6483510A true JPS6483510A (en) 1989-03-29

Family

ID=17104063

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62243450A Pending JPS6483510A (en) 1987-09-28 1987-09-28 Production of beta type silicon carbide powder

Country Status (1)

Country Link
JP (1) JPS6483510A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004036631A3 (en) * 2002-10-18 2004-06-24 Applied Materials Inc Silicon-containing layer deposition with silicon compounds

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004036631A3 (en) * 2002-10-18 2004-06-24 Applied Materials Inc Silicon-containing layer deposition with silicon compounds

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