JPS6444040A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6444040A JPS6444040A JP20151887A JP20151887A JPS6444040A JP S6444040 A JPS6444040 A JP S6444040A JP 20151887 A JP20151887 A JP 20151887A JP 20151887 A JP20151887 A JP 20151887A JP S6444040 A JPS6444040 A JP S6444040A
- Authority
- JP
- Japan
- Prior art keywords
- film
- groove
- etching
- forming
- sio2 film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To provide a roundness at the top corner of a silicon substrate and to prevent characteristics from deteriorating by forming in advance a relatively thick SiO2 film on a U-shaped groove forming region by wet oxidation before forming s U-shaped groove by etching, and etching a semiconductor layer containing the SiO2 film to form the groove. CONSTITUTION:An Si3N4 film 13 is formed through an SiO2 film 12 on a silicon substrate 11, patterned, wet oxidized with it as a mask, thereby forming an SiO2 film 20. The film 20 is etched with fluorine gas as reaction gas by a reactive ion etching method, and with chlorine gas as reaction gas a silicon substrate 11 is etched to form a U-shaped groove 15. An SiO2 film 18 is formed in the groove 15 by wet oxidizing, the groove is coated with a conductive polycrystalline silicon film 19 by a reduced pressure chemical vapor growing method to bury the groove 15. The film 19 coating the upper face is removed by etching or polishing, and the film 13 is eventually removed. Thus, when a roundness is formed at the upper corner of the silicon layer, a capacitor having no drop in breakdown strength is obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20151887A JPS6444040A (en) | 1987-08-11 | 1987-08-11 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20151887A JPS6444040A (en) | 1987-08-11 | 1987-08-11 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6444040A true JPS6444040A (en) | 1989-02-16 |
Family
ID=16442374
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20151887A Pending JPS6444040A (en) | 1987-08-11 | 1987-08-11 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6444040A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6194787B1 (en) | 1996-04-04 | 2001-02-27 | Nec Corporation | Multistage coupling semiconductor carrier, semiconductor device using the semiconductor carrier |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6122661A (en) * | 1984-07-10 | 1986-01-31 | Nec Corp | Manufacture of semiconductor device |
| JPS61214446A (en) * | 1985-03-19 | 1986-09-24 | Toshiba Corp | Manufacture of semiconductor device |
-
1987
- 1987-08-11 JP JP20151887A patent/JPS6444040A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6122661A (en) * | 1984-07-10 | 1986-01-31 | Nec Corp | Manufacture of semiconductor device |
| JPS61214446A (en) * | 1985-03-19 | 1986-09-24 | Toshiba Corp | Manufacture of semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6194787B1 (en) | 1996-04-04 | 2001-02-27 | Nec Corporation | Multistage coupling semiconductor carrier, semiconductor device using the semiconductor carrier |
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