JPS57149752A - Structure of multilayer wiring - Google Patents

Structure of multilayer wiring

Info

Publication number
JPS57149752A
JPS57149752A JP3609281A JP3609281A JPS57149752A JP S57149752 A JPS57149752 A JP S57149752A JP 3609281 A JP3609281 A JP 3609281A JP 3609281 A JP3609281 A JP 3609281A JP S57149752 A JPS57149752 A JP S57149752A
Authority
JP
Japan
Prior art keywords
film
wiring
layer
psg
coated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3609281A
Other languages
Japanese (ja)
Inventor
Yoichi Akasaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP3609281A priority Critical patent/JPS57149752A/en
Publication of JPS57149752A publication Critical patent/JPS57149752A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics

Abstract

PURPOSE:To ensure the insulation of metallic wiring formed up and down by using two kinds of materials as a layer insulating film and employing the plasma nitride film as a lower layer and the SiO2 or the film of PSG as an upper layer when the multilayer wiring structure is shaped to a semiconductor device. CONSTITUTION:An oxide film or a PSG film 4 is coated with the first layer wiring 8a, the wiring is patterned according to a predetermined method, and the plasma Si3N4 film 15 is formed to the whole surface containing the wiring through a plasma CVD method. The film 15 is coated with the SiO2 or the film 16 of PSG through a sputtering method or a CVD method, a resist film 17 for a through-hole is applied, the film 16 of an exposed section is removed through etching by using fluoric acid, etc. while using the film 17 as a mask, the film 15 is removed through dry etching, and the through-hole 9a is shaped. The film 17 is removed, the surface is coated with the second layer wiring 8b contacting with the wiring 8a through the hole 9a while the wiring 8b is extended onto the film 16, and the multilayer wiring is formed.
JP3609281A 1981-03-11 1981-03-11 Structure of multilayer wiring Pending JPS57149752A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3609281A JPS57149752A (en) 1981-03-11 1981-03-11 Structure of multilayer wiring

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3609281A JPS57149752A (en) 1981-03-11 1981-03-11 Structure of multilayer wiring

Publications (1)

Publication Number Publication Date
JPS57149752A true JPS57149752A (en) 1982-09-16

Family

ID=12460105

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3609281A Pending JPS57149752A (en) 1981-03-11 1981-03-11 Structure of multilayer wiring

Country Status (1)

Country Link
JP (1) JPS57149752A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61113263A (en) * 1984-11-08 1986-05-31 Matsushita Electronics Corp Semiconductor device
JPS63164344A (en) * 1986-12-26 1988-07-07 Toshiba Corp Semiconductor device
JPH0191439A (en) * 1987-06-18 1989-04-11 Seiko Instr & Electron Ltd Semiconductor device
US5442223A (en) * 1990-10-17 1995-08-15 Nippondenso Co., Ltd. Semiconductor device with stress relief
JP2002085486A (en) * 2000-09-14 2002-03-26 Leben Co Ltd Nursing care grip

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5135292A (en) * 1974-09-20 1976-03-25 Matsushita Electric Ind Co Ltd Handotaisochi oyobi sonoseizohoho

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5135292A (en) * 1974-09-20 1976-03-25 Matsushita Electric Ind Co Ltd Handotaisochi oyobi sonoseizohoho

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61113263A (en) * 1984-11-08 1986-05-31 Matsushita Electronics Corp Semiconductor device
JPS63164344A (en) * 1986-12-26 1988-07-07 Toshiba Corp Semiconductor device
JPH0332214B2 (en) * 1986-12-26 1991-05-10 Tokyo Shibaura Electric Co
JPH0191439A (en) * 1987-06-18 1989-04-11 Seiko Instr & Electron Ltd Semiconductor device
US5442223A (en) * 1990-10-17 1995-08-15 Nippondenso Co., Ltd. Semiconductor device with stress relief
JP2002085486A (en) * 2000-09-14 2002-03-26 Leben Co Ltd Nursing care grip

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