JPS6441240A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS6441240A
JPS6441240A JP19760987A JP19760987A JPS6441240A JP S6441240 A JPS6441240 A JP S6441240A JP 19760987 A JP19760987 A JP 19760987A JP 19760987 A JP19760987 A JP 19760987A JP S6441240 A JPS6441240 A JP S6441240A
Authority
JP
Japan
Prior art keywords
layer
wiring
titanium
titanium nitride
connection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19760987A
Other languages
Japanese (ja)
Inventor
Shigeru Murakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP19760987A priority Critical patent/JPS6441240A/en
Publication of JPS6441240A publication Critical patent/JPS6441240A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To control mutual diffusion of wiring metal and silicon at wiring connection and to reduce connection resistance by contacting the opening inside for wiring connection with a double layer film of titanium and titanium nitride and by filling it with metal. CONSTITUTION:A silicon oxide film 102, an active region 103, a phosphorus glass layer 104 and an opening 105 for wiring layer connection are provided on a silicon substrate 101. Then a titanium layer 106 and a titanium nitride layer 107 are formed successively, and a photo resist layer 108 is applied flat. Afterwards, etching is made to the titanium and titanium nitride layers and the photo resist layer until the layer 104 is exposed. After photo resist 108 is removed, tungsten 109 is grown only on the surface of titanium nitride which remains in the inside of the opening 105. Then a wiring layer 110 is formed.
JP19760987A 1987-08-07 1987-08-07 Semiconductor integrated circuit device Pending JPS6441240A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19760987A JPS6441240A (en) 1987-08-07 1987-08-07 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19760987A JPS6441240A (en) 1987-08-07 1987-08-07 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS6441240A true JPS6441240A (en) 1989-02-13

Family

ID=16377318

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19760987A Pending JPS6441240A (en) 1987-08-07 1987-08-07 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS6441240A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01266718A (en) * 1988-04-19 1989-10-24 Fujitsu Ltd Production of semiconductor device
JPH02199827A (en) * 1989-01-30 1990-08-08 Hitachi Ltd Fine wiring
JPH03230531A (en) * 1990-02-06 1991-10-14 Matsushita Electron Corp Manufacture of semiconductor device
JPH03239365A (en) * 1990-02-17 1991-10-24 Takehide Shirato Semiconductor device
JPH0442952A (en) * 1990-06-06 1992-02-13 Matsushita Electron Corp Electrode wiring of semiconductor device and formation thereof
JPH04152631A (en) * 1990-10-17 1992-05-26 Mitsubishi Electric Corp Semiconductor device
JPH0685414B2 (en) * 1989-04-17 1994-10-26 ヒューズ・エアクラフト・カンパニー Titanium tungsten and selective CVD tungsten recess interconnection method
JP2016225512A (en) * 2015-06-01 2016-12-28 富士電機株式会社 Semiconductor device manufacturing method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6190445A (en) * 1984-10-09 1986-05-08 Nec Corp Semiconductor device
JPS61258452A (en) * 1985-05-13 1986-11-15 Toshiba Corp Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6190445A (en) * 1984-10-09 1986-05-08 Nec Corp Semiconductor device
JPS61258452A (en) * 1985-05-13 1986-11-15 Toshiba Corp Semiconductor device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01266718A (en) * 1988-04-19 1989-10-24 Fujitsu Ltd Production of semiconductor device
JPH02199827A (en) * 1989-01-30 1990-08-08 Hitachi Ltd Fine wiring
JPH0685414B2 (en) * 1989-04-17 1994-10-26 ヒューズ・エアクラフト・カンパニー Titanium tungsten and selective CVD tungsten recess interconnection method
JPH03230531A (en) * 1990-02-06 1991-10-14 Matsushita Electron Corp Manufacture of semiconductor device
JPH03239365A (en) * 1990-02-17 1991-10-24 Takehide Shirato Semiconductor device
JPH0442952A (en) * 1990-06-06 1992-02-13 Matsushita Electron Corp Electrode wiring of semiconductor device and formation thereof
JPH04152631A (en) * 1990-10-17 1992-05-26 Mitsubishi Electric Corp Semiconductor device
JP2016225512A (en) * 2015-06-01 2016-12-28 富士電機株式会社 Semiconductor device manufacturing method

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