JPS6441240A - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit deviceInfo
- Publication number
- JPS6441240A JPS6441240A JP19760987A JP19760987A JPS6441240A JP S6441240 A JPS6441240 A JP S6441240A JP 19760987 A JP19760987 A JP 19760987A JP 19760987 A JP19760987 A JP 19760987A JP S6441240 A JPS6441240 A JP S6441240A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- wiring
- titanium
- titanium nitride
- connection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To control mutual diffusion of wiring metal and silicon at wiring connection and to reduce connection resistance by contacting the opening inside for wiring connection with a double layer film of titanium and titanium nitride and by filling it with metal. CONSTITUTION:A silicon oxide film 102, an active region 103, a phosphorus glass layer 104 and an opening 105 for wiring layer connection are provided on a silicon substrate 101. Then a titanium layer 106 and a titanium nitride layer 107 are formed successively, and a photo resist layer 108 is applied flat. Afterwards, etching is made to the titanium and titanium nitride layers and the photo resist layer until the layer 104 is exposed. After photo resist 108 is removed, tungsten 109 is grown only on the surface of titanium nitride which remains in the inside of the opening 105. Then a wiring layer 110 is formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19760987A JPS6441240A (en) | 1987-08-07 | 1987-08-07 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19760987A JPS6441240A (en) | 1987-08-07 | 1987-08-07 | Semiconductor integrated circuit device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6441240A true JPS6441240A (en) | 1989-02-13 |
Family
ID=16377318
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19760987A Pending JPS6441240A (en) | 1987-08-07 | 1987-08-07 | Semiconductor integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6441240A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01266718A (en) * | 1988-04-19 | 1989-10-24 | Fujitsu Ltd | Production of semiconductor device |
JPH02199827A (en) * | 1989-01-30 | 1990-08-08 | Hitachi Ltd | Fine wiring |
JPH03230531A (en) * | 1990-02-06 | 1991-10-14 | Matsushita Electron Corp | Manufacture of semiconductor device |
JPH03239365A (en) * | 1990-02-17 | 1991-10-24 | Takehide Shirato | Semiconductor device |
JPH0442952A (en) * | 1990-06-06 | 1992-02-13 | Matsushita Electron Corp | Electrode wiring of semiconductor device and formation thereof |
JPH04152631A (en) * | 1990-10-17 | 1992-05-26 | Mitsubishi Electric Corp | Semiconductor device |
JPH0685414B2 (en) * | 1989-04-17 | 1994-10-26 | ヒューズ・エアクラフト・カンパニー | Titanium tungsten and selective CVD tungsten recess interconnection method |
JP2016225512A (en) * | 2015-06-01 | 2016-12-28 | 富士電機株式会社 | Semiconductor device manufacturing method |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6190445A (en) * | 1984-10-09 | 1986-05-08 | Nec Corp | Semiconductor device |
JPS61258452A (en) * | 1985-05-13 | 1986-11-15 | Toshiba Corp | Semiconductor device |
-
1987
- 1987-08-07 JP JP19760987A patent/JPS6441240A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6190445A (en) * | 1984-10-09 | 1986-05-08 | Nec Corp | Semiconductor device |
JPS61258452A (en) * | 1985-05-13 | 1986-11-15 | Toshiba Corp | Semiconductor device |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01266718A (en) * | 1988-04-19 | 1989-10-24 | Fujitsu Ltd | Production of semiconductor device |
JPH02199827A (en) * | 1989-01-30 | 1990-08-08 | Hitachi Ltd | Fine wiring |
JPH0685414B2 (en) * | 1989-04-17 | 1994-10-26 | ヒューズ・エアクラフト・カンパニー | Titanium tungsten and selective CVD tungsten recess interconnection method |
JPH03230531A (en) * | 1990-02-06 | 1991-10-14 | Matsushita Electron Corp | Manufacture of semiconductor device |
JPH03239365A (en) * | 1990-02-17 | 1991-10-24 | Takehide Shirato | Semiconductor device |
JPH0442952A (en) * | 1990-06-06 | 1992-02-13 | Matsushita Electron Corp | Electrode wiring of semiconductor device and formation thereof |
JPH04152631A (en) * | 1990-10-17 | 1992-05-26 | Mitsubishi Electric Corp | Semiconductor device |
JP2016225512A (en) * | 2015-06-01 | 2016-12-28 | 富士電機株式会社 | Semiconductor device manufacturing method |
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