JPS6489539A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6489539A JPS6489539A JP24709687A JP24709687A JPS6489539A JP S6489539 A JPS6489539 A JP S6489539A JP 24709687 A JP24709687 A JP 24709687A JP 24709687 A JP24709687 A JP 24709687A JP S6489539 A JPS6489539 A JP S6489539A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- forming
- wiring layer
- wiring
- insulating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To prevent removal of an insulating layer located at a stepped part by forming second and third wiring layers on a first wiring layer, and by getting the second wiring layer to be coated at the time of forming an opening part. CONSTITUTION:A gate oxide film 3 is formed on a silicon substrate 1 after forming a field oxide film 2. Then after forming a wiring layer 4 consisting of a polycrystalline silicon layer on the gate oxide film 3 and patterning it, impurity regions 5, 6 are formed on the silicon substrate 1. Then when forming an insulating layer 7 consisting of an SiO2 layer or the like over the entire surface and coating the wiring layer 4, stepped parts 7a, 7a are likewise formed on the insulating layer 7. An opening part 9 is formed to expose the impurity region 5 after forming a wiring layer 8 consisting entirely of a polycrystalline silicon. Then a wiring layer 10 is formed using the polycrystalline silicon layer after light etching or ammonia hydrolytic treatment. Both wiring layers 8 and 10 are patterned as predetermined. According to the constitution, the stepped parts 7a, 7a on the interlayer insulating layer 7 are not to be removed by etching, whereby interlayer pressure resistance can be improved.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62247096A JP2551030B2 (en) | 1987-09-30 | 1987-09-30 | Semiconductor device and manufacturing method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62247096A JP2551030B2 (en) | 1987-09-30 | 1987-09-30 | Semiconductor device and manufacturing method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6489539A true JPS6489539A (en) | 1989-04-04 |
JP2551030B2 JP2551030B2 (en) | 1996-11-06 |
Family
ID=17158369
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62247096A Expired - Fee Related JP2551030B2 (en) | 1987-09-30 | 1987-09-30 | Semiconductor device and manufacturing method thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2551030B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5900554A (en) * | 1995-07-28 | 1999-05-04 | Nippendenso Co., Ltd. | Pressure sensor |
-
1987
- 1987-09-30 JP JP62247096A patent/JP2551030B2/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5900554A (en) * | 1995-07-28 | 1999-05-04 | Nippendenso Co., Ltd. | Pressure sensor |
Also Published As
Publication number | Publication date |
---|---|
JP2551030B2 (en) | 1996-11-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |