JPS56160071A - Manufacture of insulated gate type field effect transistor - Google Patents
Manufacture of insulated gate type field effect transistorInfo
- Publication number
- JPS56160071A JPS56160071A JP5389580A JP5389580A JPS56160071A JP S56160071 A JPS56160071 A JP S56160071A JP 5389580 A JP5389580 A JP 5389580A JP 5389580 A JP5389580 A JP 5389580A JP S56160071 A JPS56160071 A JP S56160071A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- source
- region
- semiconductor substrate
- manufacture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 4
- 239000004065 semiconductor Substances 0.000 abstract 3
- 229910045601 alloy Inorganic materials 0.000 abstract 2
- 239000000956 alloy Substances 0.000 abstract 2
- 238000005275 alloying Methods 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
Abstract
PURPOSE:To obtain MISFET by electrically connecting a source region and a semiconductor substrate by a method wherein a drain electrode is formed after an Al electrode is formed on a source region and heat-treated for alloying. CONSTITUTION:The source region 3 and a drain region 2 are formed on the P type silicon substrate 1, and a gate insulation film 5 is formed. Then, a gate electrode 6 composed of a polycrystalline silicon is formed and ions is injected with the electrode 6 as a mask to form an offset gate region 4. Then, Al is evaporated on the source region to form a source electrode 8, the heat treatment for alloying is applied in the hydrogen atmosphere and the alloy spike on a source alloy layer 11 is formed to be connected with the semiconductor substrate. Subsequently, the drain electrode 7 and the source electrode 13 are formed. The element of the high withstand voltage can be obtained without the ion-injection of the carrier from the source to the semiconductor substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5389580A JPS56160071A (en) | 1980-04-23 | 1980-04-23 | Manufacture of insulated gate type field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5389580A JPS56160071A (en) | 1980-04-23 | 1980-04-23 | Manufacture of insulated gate type field effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56160071A true JPS56160071A (en) | 1981-12-09 |
Family
ID=12955451
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5389580A Pending JPS56160071A (en) | 1980-04-23 | 1980-04-23 | Manufacture of insulated gate type field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56160071A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55134305A (en) * | 1979-04-09 | 1980-10-20 | Hoxan Corp | Length measuring device used at extremely low temperature |
JPH07336127A (en) * | 1994-06-09 | 1995-12-22 | Nec Corp | Device and method for detecting antenna tracking error |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5287373A (en) * | 1976-01-17 | 1977-07-21 | Nec Corp | Production of semiconductor device |
JPS52122482A (en) * | 1976-04-07 | 1977-10-14 | Sanyo Electric Co Ltd | Semiconductor device |
JPS53980A (en) * | 1977-07-13 | 1978-01-07 | Hitachi Ltd | Field-effect transistor of high dielectric strength |
-
1980
- 1980-04-23 JP JP5389580A patent/JPS56160071A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5287373A (en) * | 1976-01-17 | 1977-07-21 | Nec Corp | Production of semiconductor device |
JPS52122482A (en) * | 1976-04-07 | 1977-10-14 | Sanyo Electric Co Ltd | Semiconductor device |
JPS53980A (en) * | 1977-07-13 | 1978-01-07 | Hitachi Ltd | Field-effect transistor of high dielectric strength |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55134305A (en) * | 1979-04-09 | 1980-10-20 | Hoxan Corp | Length measuring device used at extremely low temperature |
JPH07336127A (en) * | 1994-06-09 | 1995-12-22 | Nec Corp | Device and method for detecting antenna tracking error |
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