JPS56160071A - Manufacture of insulated gate type field effect transistor - Google Patents

Manufacture of insulated gate type field effect transistor

Info

Publication number
JPS56160071A
JPS56160071A JP5389580A JP5389580A JPS56160071A JP S56160071 A JPS56160071 A JP S56160071A JP 5389580 A JP5389580 A JP 5389580A JP 5389580 A JP5389580 A JP 5389580A JP S56160071 A JPS56160071 A JP S56160071A
Authority
JP
Japan
Prior art keywords
electrode
source
region
semiconductor substrate
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5389580A
Other languages
Japanese (ja)
Inventor
Toshiyuki Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP5389580A priority Critical patent/JPS56160071A/en
Publication of JPS56160071A publication Critical patent/JPS56160071A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)

Abstract

PURPOSE:To obtain MISFET by electrically connecting a source region and a semiconductor substrate by a method wherein a drain electrode is formed after an Al electrode is formed on a source region and heat-treated for alloying. CONSTITUTION:The source region 3 and a drain region 2 are formed on the P type silicon substrate 1, and a gate insulation film 5 is formed. Then, a gate electrode 6 composed of a polycrystalline silicon is formed and ions is injected with the electrode 6 as a mask to form an offset gate region 4. Then, Al is evaporated on the source region to form a source electrode 8, the heat treatment for alloying is applied in the hydrogen atmosphere and the alloy spike on a source alloy layer 11 is formed to be connected with the semiconductor substrate. Subsequently, the drain electrode 7 and the source electrode 13 are formed. The element of the high withstand voltage can be obtained without the ion-injection of the carrier from the source to the semiconductor substrate.
JP5389580A 1980-04-23 1980-04-23 Manufacture of insulated gate type field effect transistor Pending JPS56160071A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5389580A JPS56160071A (en) 1980-04-23 1980-04-23 Manufacture of insulated gate type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5389580A JPS56160071A (en) 1980-04-23 1980-04-23 Manufacture of insulated gate type field effect transistor

Publications (1)

Publication Number Publication Date
JPS56160071A true JPS56160071A (en) 1981-12-09

Family

ID=12955451

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5389580A Pending JPS56160071A (en) 1980-04-23 1980-04-23 Manufacture of insulated gate type field effect transistor

Country Status (1)

Country Link
JP (1) JPS56160071A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55134305A (en) * 1979-04-09 1980-10-20 Hoxan Corp Length measuring device used at extremely low temperature
JPH07336127A (en) * 1994-06-09 1995-12-22 Nec Corp Device and method for detecting antenna tracking error

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5287373A (en) * 1976-01-17 1977-07-21 Nec Corp Production of semiconductor device
JPS52122482A (en) * 1976-04-07 1977-10-14 Sanyo Electric Co Ltd Semiconductor device
JPS53980A (en) * 1977-07-13 1978-01-07 Hitachi Ltd Field-effect transistor of high dielectric strength

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5287373A (en) * 1976-01-17 1977-07-21 Nec Corp Production of semiconductor device
JPS52122482A (en) * 1976-04-07 1977-10-14 Sanyo Electric Co Ltd Semiconductor device
JPS53980A (en) * 1977-07-13 1978-01-07 Hitachi Ltd Field-effect transistor of high dielectric strength

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55134305A (en) * 1979-04-09 1980-10-20 Hoxan Corp Length measuring device used at extremely low temperature
JPH07336127A (en) * 1994-06-09 1995-12-22 Nec Corp Device and method for detecting antenna tracking error

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