JPS64349U - - Google Patents
Info
- Publication number
- JPS64349U JPS64349U JP9337887U JP9337887U JPS64349U JP S64349 U JPS64349 U JP S64349U JP 9337887 U JP9337887 U JP 9337887U JP 9337887 U JP9337887 U JP 9337887U JP S64349 U JPS64349 U JP S64349U
- Authority
- JP
- Japan
- Prior art keywords
- photo diode
- semiconductor substrate
- conductivity type
- long wavelength
- wavelength photo
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 3
- 238000001514 detection method Methods 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 4
- 238000009434 installation Methods 0.000 description 1
Description
第１図は本考案の一実施例の断面図、第２図は
第１図の装置の等価回路図、第３図は第１図の装
着の特性図、第４図は本考案の他の実施例の断面
図、第５図は従来装置の一例の断面図、第６図は
第５図の装置の等価回路図、第７、８図は第５図
の装置の特性図である。
符号の説明、１８……長波長用フオト・ダイオ
ード、１９……短波長用フオト・ダイオード、２
９……短波長用フオト・ダイオード。
Fig. 1 is a sectional view of one embodiment of the present invention, Fig. 2 is an equivalent circuit diagram of the device shown in Fig. 1, Fig. 3 is a characteristic diagram of the installation of Fig. 1, and Fig. 4 is another embodiment of the device of the present invention. 5 is a sectional view of an example of a conventional device, FIG. 6 is an equivalent circuit diagram of the device in FIG. 5, and FIGS. 7 and 8 are characteristic diagrams of the device in FIG. 5. Explanation of symbols, 18... Photo diode for long wavelength, 19... Photo diode for short wavelength, 2
9...Photo diode for short wavelength.
Claims (1)
傍に形成された反対導電形の領域とによるｐｎ接
合を用いた長波長用フオト・ダイオードと、上記
半導体基板上の上記長波長用フオト・ダイオード
が形成されていない部分の表面上に積層された薄
膜層による短波長用フオト・ダイオードとを備え
たことを特徴とする半導体波長検出装置。 A long wavelength photo diode using a pn junction formed of a semiconductor substrate of one conductivity type and a region of an opposite conductivity type formed near the surface of the semiconductor substrate, and the long wavelength photo diode on the semiconductor substrate. A semiconductor wavelength detection device characterized by comprising a short wavelength photo diode formed of a thin film layer laminated on the surface of the unformed portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9337887U JPS64349U (en) | 1987-06-19 | 1987-06-19 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9337887U JPS64349U (en) | 1987-06-19 | 1987-06-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS64349U true JPS64349U (en) | 1989-01-05 |
Family
ID=30955913
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9337887U Pending JPS64349U (en) | 1987-06-19 | 1987-06-19 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS64349U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011171546A (en) * | 2010-02-19 | 2011-09-01 | Victor Co Of Japan Ltd | Light receiving element |
-
1987
- 1987-06-19 JP JP9337887U patent/JPS64349U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011171546A (en) * | 2010-02-19 | 2011-09-01 | Victor Co Of Japan Ltd | Light receiving element |
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