JPS62193743U - - Google Patents
Info
- Publication number
- JPS62193743U JPS62193743U JP8338586U JP8338586U JPS62193743U JP S62193743 U JPS62193743 U JP S62193743U JP 8338586 U JP8338586 U JP 8338586U JP 8338586 U JP8338586 U JP 8338586U JP S62193743 U JPS62193743 U JP S62193743U
- Authority
- JP
- Japan
- Prior art keywords
- diffusion layer
- hole
- insulating film
- semiconductor substrate
- phosphorus concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000012212 insulator Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 2
- 229910052698 phosphorus Inorganic materials 0.000 claims 2
- 239000011574 phosphorus Substances 0.000 claims 2
- 239000013067 intermediate product Substances 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
第1図は本考案の半導体装置の部分断面図、第
2図、第3図は同装置の中間品の部分断面図、第
4図は従来装置の部分断面図である。
10……半導体基板、15……絶縁体膜、16
……貫通孔、22……配線、17……第1絶縁体
膜、18……第2絶縁体膜。
FIG. 1 is a partial sectional view of a semiconductor device of the present invention, FIGS. 2 and 3 are partial sectional views of intermediate products of the same device, and FIG. 4 is a partial sectional view of a conventional device. 10...Semiconductor substrate, 15...Insulator film, 16
...Through hole, 22... Wiring, 17... First insulator film, 18... Second insulator film.
Claims (1)
体基板上に前記拡散層を覆うように形成されかつ
前記拡散層の1部分を露出させる貫通孔を有する
絶縁体膜と、該絶縁体膜上に付設され前記貫通孔
を通じて前記拡散層に接続される配線とを備えて
なる半導体装置において、前記絶縁体膜は前記半
導体基板側に配置されているリン濃度の小さい第
1絶縁体膜と、前記配線側に配置されているリン
濃度の大きい第2絶縁体膜とを備えており、前記
貫通孔はその開口幅がこの貫通孔の深さ方向に向
けて傾向として徐々に小さく構成されていること
を特徴とする半導体装置。 a semiconductor substrate having a diffusion layer on a surface portion; an insulator film formed on the semiconductor substrate to cover the diffusion layer and having a through hole exposing a portion of the diffusion layer; In the semiconductor device, the insulating film includes a first insulating film with a low phosphorus concentration disposed on the semiconductor substrate side, and a wiring connected to the diffusion layer through the through hole; and a second insulating film having a high phosphorus concentration disposed on the side, and the opening width of the through hole is configured to gradually become smaller in the depth direction of the through hole. Characteristic semiconductor devices.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8338586U JPS62193743U (en) | 1986-05-30 | 1986-05-30 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8338586U JPS62193743U (en) | 1986-05-30 | 1986-05-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS62193743U true JPS62193743U (en) | 1987-12-09 |
Family
ID=30936922
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8338586U Pending JPS62193743U (en) | 1986-05-30 | 1986-05-30 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62193743U (en) |
-
1986
- 1986-05-30 JP JP8338586U patent/JPS62193743U/ja active Pending