JPS6431959A - Formation of thin compound film - Google Patents
Formation of thin compound filmInfo
- Publication number
- JPS6431959A JPS6431959A JP18726187A JP18726187A JPS6431959A JP S6431959 A JPS6431959 A JP S6431959A JP 18726187 A JP18726187 A JP 18726187A JP 18726187 A JP18726187 A JP 18726187A JP S6431959 A JPS6431959 A JP S6431959A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- sputtering
- compound film
- thin compound
- active
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Physical Vapour Deposition (AREA)
Abstract
PURPOSE:To form a thin compound film consisting of metallic target-composing materials and active gas-composing materials to the desired composition with good reproducibility, by monitoring sputtering speed at the time of carrying out sputtering by introducing active gas and inert gas into a vacuum vessel to exert glow discharge. CONSTITUTION:Ar gas is introduced from a mass flow controller 11 into a vacuum vessel 1 and, while holding a pressure at about 5X10<-6>, nitrogen gas is introduced from a mass controller 12, and then, a voltage is impressed on a metallic target 4 by means of a D.C. power source 14 to start sputtering. At this time, the consumption of active gas incorporated into a thin film under sputtering and consumed and sputtering speed detected by means of a spectrometry equipment 16 are monitored, and, according to the composition of the thin compound film to be formed, active-gas consumption and sputtering speed ratio are set up. By this method, the thin compound film of the desired composition having good reproducibility can be formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18726187A JPS6431959A (en) | 1987-07-27 | 1987-07-27 | Formation of thin compound film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18726187A JPS6431959A (en) | 1987-07-27 | 1987-07-27 | Formation of thin compound film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6431959A true JPS6431959A (en) | 1989-02-02 |
Family
ID=16202881
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18726187A Pending JPS6431959A (en) | 1987-07-27 | 1987-07-27 | Formation of thin compound film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6431959A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5283435A (en) * | 1991-11-27 | 1994-02-01 | Leybold Aktiengesellschaft | Apparatus for determining the concentration of a gas in a vacuum chamber |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54153791A (en) * | 1978-05-24 | 1979-12-04 | Gould Inc | Method and apparatus for watching and controlling sputtering adhesion |
JPS596376A (en) * | 1982-06-30 | 1984-01-13 | Anelva Corp | Sputtering apparatus |
JPS61242631A (en) * | 1985-04-20 | 1986-10-28 | Nippon Soken Inc | Method and device for producing ultrafine particles of compound |
-
1987
- 1987-07-27 JP JP18726187A patent/JPS6431959A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54153791A (en) * | 1978-05-24 | 1979-12-04 | Gould Inc | Method and apparatus for watching and controlling sputtering adhesion |
JPS596376A (en) * | 1982-06-30 | 1984-01-13 | Anelva Corp | Sputtering apparatus |
JPS61242631A (en) * | 1985-04-20 | 1986-10-28 | Nippon Soken Inc | Method and device for producing ultrafine particles of compound |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5283435A (en) * | 1991-11-27 | 1994-02-01 | Leybold Aktiengesellschaft | Apparatus for determining the concentration of a gas in a vacuum chamber |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS57180046A (en) | Panel for displaying dc gas discharge | |
ES8708093A1 (en) | Vertical apparatus for continuous deposition of semiconductor alloys. | |
JPS6431959A (en) | Formation of thin compound film | |
EP0244874A3 (en) | Luminescent material, process for producing it and luminescent semiconductor device using it | |
JPS6459729A (en) | Manufacture of superconducting thin film | |
JPS542300A (en) | Methdo and apparatus for vapor phase growth of magnespinel | |
JPS53110378A (en) | Plasma carrying device | |
JPS6483655A (en) | Sputtering film formation | |
JPS52127770A (en) | Spatter etching method | |
JPS57123968A (en) | Formation of zinc oxide film by plasma vapor phase method | |
JPS6451326A (en) | Production of superconducting material | |
JPS5531139A (en) | Ion-treating apparatus | |
JPS54128283A (en) | Manufacture of semiconductor device | |
JPS5377885A (en) | Coating method for substrate | |
JPS52122284A (en) | Sputtering device having bias electrode | |
JPS5547225A (en) | Production of zinc oxide thin film | |
JPS6446936A (en) | Growth method of thin film | |
JPS55125634A (en) | Production of silicon dioxide film | |
JPS541242A (en) | Method of removing metal scale | |
JPS57211239A (en) | Formation of insulating film | |
JPS5772235A (en) | Transparent electrode and production thereof | |
JPS52122283A (en) | Sputtering device having bias mechanism | |
JPS53147684A (en) | Method of and apparatus for liquid phase epitaxial growth | |
JPS5613481A (en) | Etching apparatus | |
JPS5576545A (en) | Production method of gas discharge panel |