JPS6428928A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6428928A JPS6428928A JP18351787A JP18351787A JPS6428928A JP S6428928 A JPS6428928 A JP S6428928A JP 18351787 A JP18351787 A JP 18351787A JP 18351787 A JP18351787 A JP 18351787A JP S6428928 A JPS6428928 A JP S6428928A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- semiconductor device
- denatured
- coupling agent
- denatured resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Die Bonding (AREA)
Abstract
PURPOSE:To obtain a semiconductor device whose bonding performance, resistance to hydrolysis, moistureproof reliability and hardening speed are excellent by a method wherein a semiconductor chip and a lead frame are bonded by using a denatured resin composition whose constituents are a denatured resin composed of polyparahydroxystyrene and an epoxy resin, a silane-based coupling agent containing a ureide group and a conductor powder. CONSTITUTION:A semiconductor device is manufactured in the following manner: a denatured resin composed of polyparahydroxystyrene and an epoxy resin, a ureide silane-based coupling agent and a conductive powder are mixed sufficiently according to an ordinary method; after that, this mixture is kneaded, e.g., by using three rolls, a semiconductor chip and a lead frame are bonded by an obtained denatured resin composition; this composition is hardended in a short time by using a heat block or the like; after that, a wire bonding operation is executed; after that, the semiconductor device is sealed by using a resin. Because the denatured resin and the silanebased coupling agent containing a ureide group are used, the bonding performance between the resin and a wire is enhanced; a high-speed hardening operation can be executed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18351787A JPS6428928A (en) | 1987-07-24 | 1987-07-24 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18351787A JPS6428928A (en) | 1987-07-24 | 1987-07-24 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6428928A true JPS6428928A (en) | 1989-01-31 |
Family
ID=16137229
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18351787A Pending JPS6428928A (en) | 1987-07-24 | 1987-07-24 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6428928A (en) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5657792A (en) * | 1979-10-15 | 1981-05-20 | Shin Etsu Chem Co Ltd | Preparation of ureido group-containing alkoxysilane |
JPS60189229A (en) * | 1984-03-09 | 1985-09-26 | Toshiba Chem Corp | Semiconductor device |
JPS60193349A (en) * | 1984-03-15 | 1985-10-01 | Toshiba Chem Corp | Semiconductor element |
JPS6110247A (en) * | 1984-06-26 | 1986-01-17 | Hitachi Chem Co Ltd | Semiconductor device |
-
1987
- 1987-07-24 JP JP18351787A patent/JPS6428928A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5657792A (en) * | 1979-10-15 | 1981-05-20 | Shin Etsu Chem Co Ltd | Preparation of ureido group-containing alkoxysilane |
JPS60189229A (en) * | 1984-03-09 | 1985-09-26 | Toshiba Chem Corp | Semiconductor device |
JPS60193349A (en) * | 1984-03-15 | 1985-10-01 | Toshiba Chem Corp | Semiconductor element |
JPS6110247A (en) * | 1984-06-26 | 1986-01-17 | Hitachi Chem Co Ltd | Semiconductor device |
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