JPS60193349A - Semiconductor element - Google Patents

Semiconductor element

Info

Publication number
JPS60193349A
JPS60193349A JP59048253A JP4825384A JPS60193349A JP S60193349 A JPS60193349 A JP S60193349A JP 59048253 A JP59048253 A JP 59048253A JP 4825384 A JP4825384 A JP 4825384A JP S60193349 A JPS60193349 A JP S60193349A
Authority
JP
Japan
Prior art keywords
lead frame
modified resin
resin
silver
polyparahydroxystyrene
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59048253A
Other languages
Japanese (ja)
Other versions
JPH0527251B2 (en
Inventor
Teru Okunoyama
奥野山　輝
Haruo Kato
加藤　春雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Chemical Products Co Ltd
Kyocera Chemical Corp
Original Assignee
Toshiba Chemical Products Co Ltd
Toshiba Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Chemical Products Co Ltd, Toshiba Chemical Corp filed Critical Toshiba Chemical Products Co Ltd
Priority to JP59048253A priority Critical patent/JPS60193349A/en
Publication of JPS60193349A publication Critical patent/JPS60193349A/en
Publication of JPH0527251B2 publication Critical patent/JPH0527251B2/ja
Granted legal-status Critical Current

Links

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent

Abstract

PURPOSE:To enable to obtain a semiconductor element having superiorly water- vaporproof reliability by a method wherein modified resin consisting of polyparahydroxystyrene and epoxy resin, a composition mainly consisting of electrically conductive powder and a lead frame not plated with silver are used. CONSTITUTION:Polyparahydroxystyrene and epoxy resin are molten or made to perform a heating reaction to obtain modified resin. A semiconductor chip and a lead frame are adhered using the modified resin thereof and a modified composition mainly consisting of electrically conductive powder such as Ag, etc. A lead frame not plated with silver, mainly a copper lead frame, an iron lead frame, etc. are used as the lead frame. By using the adhesive and the lead frame having the compositions mentioned above, adhesion between the semiconductor chip and the lead frame, and wire bonding ability according to a gold wire are enhanced, resistance to hydrolysis is improved, and inferiority of disconnection according to corrosion of a metal, etc. and inferiority of a leakage current due to water, etc. can be reduced remarkably.

Description

【発明の詳細な説明】 ［発明の技術分野］ 本発明は、樹脂で封止した半導体素子に係り、特に耐湿
信頼性、耐加水分解性の優れた半導体素子に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a semiconductor element sealed with a resin, and particularly to a semiconductor element having excellent moisture resistance reliability and hydrolysis resistance.

［発明の技術的背景とその問題点］ 金属薄板（リードフレーム）上の所定部分にＩＣ，ＬＳ
Ｉ等の半導体チップを接続する工程は、素子の長期信頼
性に影響を与える重要な工程の一つである。　従来より
、この接続方法としては、チップ表面の３ｉをリードフ
レーム上のＡＵメッキ面に加熱圧着するというＡｕ−８
ｉの共晶法が主流であった。　しかし近年の貴金属、特
にＡｕの高騰を契機として、樹脂モールド半導体素子で
は、Ａｕ−８ｉ共品法から、ハンダを使用する方法、導
電性接着剤を使用する方法などに急速に移行しつつある
。[Technical background of the invention and its problems] ICs and LSs are installed at predetermined parts on a thin metal plate (lead frame).
The process of connecting semiconductor chips such as I is one of the important processes that affects the long-term reliability of the device. Conventionally, this connection method has been carried out using Au-8, which involves heat-pressing the 3i on the chip surface to the AU plated surface on the lead frame.
The eutectic method of i was the mainstream. However, with the rise in the price of precious metals, especially Au, in recent years, resin molded semiconductor devices are rapidly shifting from the Au-8i method to methods using solder, conductive adhesives, etc.

しかし、ハンダを使用する方法は、一部実用化されてい
るが、ハンダやハンダボールが飛散して電極等に付着し
、腐食断線の原因となる可能性が指摘されている。　一
方導電性接着剤を使用する□方法では、通常Ａａ粉末を
配合したエポキシ樹脂が用いられて、約１０年桿菌から
一部実用化されてきたが、信頼性の面でＡｕ−３ｉの共
晶合金を生成させる共晶法に比較して満足すべきものが
なかった。　導電性接着剤を使用する場合は、ハンダ法
に比べて耐熱性に優れる等の長所を有しているが、その
反面、樹脂やその硬化剤が半導体素子接着用として作ら
れたものでないために、ＡＩ電極の腐食を促進し断線不
良の原因となる場合が多く素子の信頼性はＡＵ−８ｉ共
晶法に比べて劣っていた。However, although some methods using solder have been put into practical use, it has been pointed out that the solder and solder balls may scatter and adhere to electrodes and the like, causing corrosion and disconnection. On the other hand, in the □ method using conductive adhesive, epoxy resin mixed with Aa powder is usually used, and it has been put into practical use for about 10 years since Bacillus. Compared to the eutectic method of producing alloys, it was unsatisfactory. When using a conductive adhesive, it has advantages such as superior heat resistance compared to the soldering method, but on the other hand, the resin and its curing agent are not made for bonding semiconductor devices. , which often promoted corrosion of the AI electrode and caused disconnection defects, and the reliability of the device was inferior to that of the AU-8i eutectic method.

ざらに近年ＩＣ／ＬＳＩやＬＥＤ等の半導体素子価格を
低減するためにリードフレーム上に銀メッキを施さない
新しいタイプの半導体素子が種々検討されているが、素
子製造工程における導電性接着剤の接着力不足やアウト
ガスによるワイヤーボンディング不良等のため著しく歩
留りや信頼性に劣る欠点があった。In recent years, various new types of semiconductor devices that do not require silver plating on the lead frame have been studied in order to reduce the cost of semiconductor devices such as IC/LSI and LEDs. There were drawbacks such as poor wire bonding due to insufficient force and outgassing, resulting in significantly poor yield and reliability.

［発明の目的］ 本発明の目的は、上記の欠点に鑑みてなされたもので、
新規接着剤と銀メッキを施さないリードフレームを使用
して、接着性、ワイヤーボンディング性、耐加水分解性
に優れ、耐湿信頼性を大幅に向上させるとともに製造価
格も低減できる半導体素子を提供しようとするものであ
る。[Object of the invention] The object of the present invention has been made in view of the above drawbacks, and
By using a new adhesive and a lead frame without silver plating, we aim to provide a semiconductor element that has excellent adhesiveness, wire bonding properties, and hydrolysis resistance, greatly improves moisture resistance reliability, and reduces manufacturing costs. It is something to do.

［発明の概要］ 上記の目的を達成すべく、鋭意研究を重ねた結果、次に
示す変性樹脂組成物を接着剤とする半導体素子が従来の
ものに比べて接着性、耐加水分解性、耐湿信頼性に優れ
ていることを見出した。[Summary of the Invention] In order to achieve the above object, as a result of intensive research, a semiconductor device using the following modified resin composition as an adhesive has improved adhesiveness, hydrolysis resistance, and moisture resistance compared to conventional devices. We found that it has excellent reliability.

即ち、（Ａ）ポリパラヒドロキシスチレンと工　′ポキ
ン樹脂とを溶解又は加熱反応せしめてなる変性樹脂およ
び（Ｂ）導電性粉末とを主成分とする変性樹脂組成物を
用いて半導体チップと銀メッキを施さないリードフレー
ムとが接着されていることを特徴とする半導体素子であ
る。That is, a semiconductor chip is plated with silver using a modified resin composition mainly composed of (A) a modified resin obtained by dissolving or heat-reacting polyparahydroxystyrene and polypropylene resin, and (B) conductive powder. This is a semiconductor device characterized in that it is bonded to a lead frame that is not subjected to.

本発明において用いるポリパラヒドキシスチレンは次式
で表される。The polyparahydroxystyrene used in the present invention is represented by the following formula.

このような樹脂としては、例えば丸善石油社製のマルゼ
ンレジンＭ（商品名）がある。　これは分子量３０００
〜８０００で水酸基当量は約１２０である。An example of such a resin is Maruzen Resin M (trade name) manufactured by Maruzen Sekiyu Co., Ltd., for example. This has a molecular weight of 3000
~8000 and the hydroxyl equivalent is about 120.

また、本発明に使用するエポキシ樹脂のうち、工業生産
されており、かつ本発明に効果的に使用し得るものとし
ては、例えば次のようなビスフェノール類のジエボキシ
ドがある。　シェル化学社製エピコート８２７，８２８
，８３４，１００１゜１００２．１００４．１００７．
１００９、ダウケミカル社製　ＤＥＲ３３０，３３１，
３３２゜３３４．３３５，３３６，３３７，６６０゜６
６１．６６２，６６７．６６８，６６９、チバ・ガイギ
ー社製アラルダイトＧＹ２５０，２６０゜２８０．６０
７１，６０８４．６０９７゜６０９９、Ｊ　ｏｎｅｓ　
Ｄ　ａｂｎｅｙ社製Ｅｐｉ−Ｒｅｚ５１０．５１０１、
大日本インキ化学工業社製エピクロンｓｉｏ、１ｏｏｏ
、１０１０．３０１０（いずれも商品名）。Furthermore, among the epoxy resins used in the present invention, those that are industrially produced and can be effectively used in the present invention include, for example, the following bisphenol dieboxides. Epicoat 827, 828 manufactured by Shell Chemical Co., Ltd.
,834,1001゜1002.1004.1007.
1009, Dow Chemical Company DER330, 331,
332°334.335,336,337,660°6
61.662, 667.668, 669, Ciba Geigy Araldite GY250, 260° 280.60
71,6084.6097゜6099, John ones
Epi-Rez510.5101 manufactured by Dabney,
Epicron sio, 1ooo manufactured by Dainippon Ink Chemical Industries, Ltd.
, 1010.3010 (all product names).

さらに本発明においては、エポキシ樹脂として平均エポ
キシ基数３以上の、例えばノボラック・エポキシ樹脂を
使用することにより、熱時（３５０℃）の接着強度を更
に向上させることが可能である。　使用するノボラック
・エポキシ樹脂としては分子量５００以上のものが適し
ている。　このようなノボラック・エポキシ樹脂で工業
生産されているものとしては、例えば次のようなものが
ある。Further, in the present invention, by using a novolak epoxy resin having an average number of epoxy groups of 3 or more as the epoxy resin, it is possible to further improve the adhesive strength at high temperatures (350° C.). As the novolak epoxy resin to be used, one having a molecular weight of 500 or more is suitable. Examples of industrially produced novolak epoxy resins include the following:

ヂバ・ガイギー社製アラルダイトＥＰＮ１１３８゜１１
３９、ＥＣＮ１２７３，１２８０．１２９９、ダウケミ
カル社製ＤＥＮ４３１．４３８、シェル化学社製エビコ
〜ト１５２，１５４、ユニオン・カーバイド・コーポレ
ーション社製ＥＲＲ−０１００、ＥＲＲＢ−０４４７，
ＥＲＬＢ−０４８８、日本化薬社製ＥＯＣＮシリーズで
ある。Araldite EPN1138°11 manufactured by Ziba Geigy
39, ECN1273, 1280.1299, DEN431.438 manufactured by Dow Chemical Company, Ebicoto 152,154 manufactured by Shell Chemical Company, ERR-0100, ERRB-0447 manufactured by Union Carbide Corporation,
ERLB-0488, EOCN series manufactured by Nippon Kayaku Co., Ltd.

ポリパラヒドロキシスチレンとエポキシ樹脂は当量付近
で配合される。　配合割合が当量付近を大きくはずれる
と、いずれかが硬化時に未反応となって、熱時の接着強
度や加熱減量が多くなり好ましくない。Polyparahydroxystyrene and epoxy resin are blended at approximately equivalent weights. If the blending ratio deviates significantly from the equivalent range, some of the components will remain unreacted during curing, resulting in increased adhesive strength and loss on heating, which is not preferable.

本発明で使用する変性樹脂は、ポリパラヒドロキシスチ
レンとエポキシ樹脂を単に溶解混合しても良いし、必要
であれば加熱反応により相互に部分的な結合をさせたも
のでも良く、これらの変性樹脂の共通の溶剤に溶解する
ことにより作業粘度を改善することができる。　また必
要であれば硬化触媒を使用しても良い。The modified resin used in the present invention may be obtained by simply dissolving and mixing polyparahydroxystyrene and epoxy resin, or may be partially bonded to each other by heating reaction if necessary. The working viscosity can be improved by dissolving it in common solvents. A curing catalyst may also be used if necessary.

ポリパラヒドロキシスチレンとエポキシ樹脂とを単に溶
解混合する場合は、溶剤に同時に添加し溶解させるよう
にしてもよいが、最初に後者を溶剤に溶解させた後、前
者を溶解混合させることが望ましい。　またここで使用
される溶剤類としては、ジオキサン、ヘキサノン、ベン
ゼン、トルエン、ソルベントナフサ、工業用ガソリン、
酢酸セロソルブ、エチルセロソルブ、ブチルセロソルブ
アセテート、ブチルカルピトールアセテート、ジメチル
ホルムアミド、ジメチルアセトアミド、Ｎ−メチルピロ
リドン等がある。　これらの溶剤は単独又は２種以上の
組合せで使用される。When simply dissolving and mixing polyparahydroxystyrene and epoxy resin, they may be added to a solvent at the same time and dissolved, but it is preferable to first dissolve the latter in the solvent and then dissolve and mix the former. The solvents used here include dioxane, hexanone, benzene, toluene, solvent naphtha, industrial gasoline,
Examples include cellosolve acetate, ethyl cellosolve, butyl cellosolve acetate, butyl carpitol acetate, dimethylformamide, dimethylacetamide, N-methylpyrrolidone, and the like. These solvents may be used alone or in combination of two or more.

本発明に使用される導電性粉末としては、例えばＡｇ等
、が使用される。　また必要であれば消泡剤、カップリ
ング剤等を添加することもできる。As the conductive powder used in the present invention, for example, Ag or the like is used. Moreover, if necessary, an antifoaming agent, a coupling agent, etc. can be added.

本発明に用いる銀メッキを施さないリードフレームとし
ては、銀メッキされていないもの総ての・乙のが挙げら
れ、通常主に銅系リードフレーム、鉄系リードフレーム
等が用いられる。Lead frames that are not silver-plated for use in the present invention include all lead frames that are not silver-plated, and usually copper-based lead frames, iron-based lead frames, etc. are used.

本発明の半導体素子は、常法に従い上述した変性樹脂お
よび導電性粉末を十分に混合した後、更に例えば三本ロ
ールによる混線処理を施し、得られた変性樹脂組成物を
半導体チップと銀メッキを施さないリードフレームの接
着剤として使用した後、ワイヤボンディングを行ない、
その後に半導体素子を封止して製造する。　こうして得
られた素子は、２００℃で加熱硬化させてもリードフレ
ーム面上に汚染がなく、接着力は半導体素子接着の場合
必要な０．５ｋｇ／１ｍｍ角の値以上、ワイヤーボンデ
ィング強度も同じく　４〜５ｇの値以上の数値を得るこ
とかできる。The semiconductor element of the present invention is produced by sufficiently mixing the above-mentioned modified resin and conductive powder according to a conventional method, and then subjecting the resulting modified resin composition to a semiconductor chip and silver plating. After using it as an adhesive for lead frames that are not bonded, wire bonding is performed.
Thereafter, the semiconductor element is sealed and manufactured. The thus obtained device has no contamination on the lead frame surface even when heated and cured at 200°C, has an adhesive strength exceeding the value of 0.5 kg/1 mm square required for semiconductor device adhesion, and has the same wire bonding strength. It is possible to obtain values greater than ~5g.

［発明の効果］ 前述のごとき変性樹脂組成物を接着剤として使用するこ
とによって半導体チップと銀メッキを施さないリードフ
レームとの接着性、特に熱時の接着性および金線による
ワイヤーボンディング性が向上し、耐加水分解性に優れ
、金属の腐食による断線などの不良や水分によるリーク
電流の不良などを著しく低減させることができ、耐湿信
頼性が従来のものに比べて大幅に改善され、かつ安価な
、半導体素子を得ることができる。[Effects of the invention] By using the modified resin composition as described above as an adhesive, the adhesion between the semiconductor chip and the lead frame without silver plating is improved, especially the adhesion under heat and the wire bonding property with gold wire. It has excellent hydrolysis resistance and can significantly reduce defects such as wire breakage due to metal corrosion and leakage current defects due to moisture, and has significantly improved moisture resistance reliability compared to conventional products, and is inexpensive. Thus, a semiconductor device can be obtained.

［発明の実施例］ 次に実施例により本発明を説明する。　以下「部」とは
特に説明のない限り「重量部」を意味する。[Examples of the Invention] Next, the present invention will be explained with reference to Examples. Hereinafter, "parts" means "parts by weight" unless otherwise specified.

実施例　１ エピコート１００１の３７．５部とマルゼンレジンＭ１
０部とを、ブチルカルピトールアセテート１０３部で１
００℃、１時間溶解反応を行い粘稠な褐色変性樹脂を得
た。　この変性樹脂２２部に、触媒として三弗素化ホウ
素のアミン錯体１．０部と銀粉末５７部とを混合して変
性樹脂組成物をつくり接着剤（Ａ）を得た。Example 1 37.5 parts of Epicote 1001 and Maruzen Resin M1
0 parts and 103 parts of butylcarpitol acetate.
A dissolution reaction was carried out at 00°C for 1 hour to obtain a viscous brown modified resin. To 22 parts of this modified resin, 1.0 part of an amine complex of boron trifluoride as a catalyst and 57 parts of silver powder were mixed to prepare a modified resin composition to obtain an adhesive (A).

実施例　２ エピコート８２８の１５．８部とマルゼンレジンＭ１０
部とを、ブチルセロソルブアセテート５６部で１００℃
、１時間溶解反応を行い粘稠な褐色の変性樹脂を得た。Example 2 15.8 parts of Epicote 828 and Maruzen Resin M10
parts and 56 parts of butyl cellosolve acetate at 100°C.
A dissolution reaction was carried out for 1 hour to obtain a viscous brown modified resin.

　この変性樹脂２２部と銀粉末５１部とを混合して変性
樹脂組成物を作り接着剤（Ｂ）を得た。A modified resin composition was prepared by mixing 22 parts of this modified resin and 51 parts of silver powder to obtain an adhesive (B).

実施例　３ ＥＯＣＮ１０３Ｓ　（日本化桑社製商品名）６６部をブ
チルカルピトールアセテート１１７部の溶剤中で８０℃
で溶解後、マルゼンレジンＭ３４部と触媒として三弗化
ホウ素のアミン錯体０．６部とを添加し、８０℃でその
まま反応を進め約３時間反応後、粘稠で透明な変性樹脂
を得た。　この変性樹脂２２部と銀粉末５７部とをよく
混合して変性樹脂組成物とし、これを接着剤（Ｃ）とし
た。Example 3 66 parts of EOCN103S (trade name manufactured by Nippon Kayakusha Co., Ltd.) was heated at 80°C in a solvent containing 117 parts of butylcarpitol acetate.
After dissolving, 34 parts of Maruzen Resin M and 0.6 parts of boron trifluoride amine complex as a catalyst were added, and the reaction was continued at 80°C for about 3 hours to obtain a viscous and transparent modified resin. . 22 parts of this modified resin and 57 parts of silver powder were thoroughly mixed to obtain a modified resin composition, which was used as an adhesive (C).

実施例１〜３で得た接着剤（Ａ）、（Ｂ）。Adhesives (A) and (B) obtained in Examples 1 to 3.

（Ｃ）および市販のエポキシ樹脂ベースの半導体用接着
剤（Ｄ）　（比較例）を使用して銀メッキを施ざない銅
系リードフレームと半導体チップを接着して半導体素子
を作り、その特性を測定し第１表に示した。(C) and a commercially available epoxy resin-based semiconductor adhesive (D) (comparative example) were used to bond a copper lead frame without silver plating and a semiconductor chip to make a semiconductor element, and its characteristics were evaluated. The results are shown in Table 1.

第１表 註（１）　銀メッキを施していない銅系リード７Ｌ／−
ム（ＮＳＤ＞上に１ｍ１ｌｌＸ　１ｍｍのシリコン素子
を接着し、それぞれの温 度でプッシュプルゲージを用いて測定 した。Notes to Table 1 (1) Copper lead 7L/- without silver plating
A silicon element of 1 ml x 1 mm was adhered onto the film (NSD), and measurements were made using a push-pull gauge at each temperature.

（２）　接着剤を第１表の半導体素子接着条件で硬化さ
せた後に　１００メツシユに粉砕して１８０℃×２時間
加熱抽出を行ったＣ１イオンの量。(2) The amount of C1 ions obtained by curing the adhesive under the semiconductor device adhesion conditions shown in Table 1, pulverizing it into 100 meshes, and performing heating extraction at 180°C for 2 hours.

（３）　温度１２１℃、圧力２気圧の水蒸気中における
耐湿試験（ＰＣＴ）及び温度 １２０℃、圧力２気圧の水魚気中印加電圧直流１５Ｖで
通電して行う耐湿試験 （バイアス−Ｐ　ＣＴ　）を各半導体装置について実施
し評価した。(3) Humidity resistance test (PCT) in water vapor at a temperature of 121°C and pressure of 2 atm, and humidity resistance test (bias-PCT) conducted in water vapor at a temperature of 120°C and pressure of 2 atm with an applied voltage of 15 V DC. The evaluation was conducted on semiconductor devices.

上記試験に供した半導体装置の数は各 々６０個であり、時間経過に伴う不良発生数を第１表中
に示した。　尚、評価 の方法は、半導体素子を構成するアル ミニウム電極の腐食によるオーブン又 はリーク電流が許容値の５００％以上への上昇をもって
不良と判定した。The number of semiconductor devices subjected to the above tests was 60 each, and the number of defects generated over time is shown in Table 1. The evaluation method was such that a semiconductor element was judged to be defective when the oven or leakage current due to corrosion of the aluminum electrodes constituting the semiconductor element increased to 500% or more of the allowable value.

本発明は、第１表で明らかなように接着強度、耐加水分
解性に優れ、特に加水分解性Ｃ１イオンが少ないため、
十分な信頼性を有している。As is clear from Table 1, the present invention has excellent adhesive strength and hydrolysis resistance, and has particularly low hydrolyzable C1 ions, so
It has sufficient reliability.

Claims (1)

【特許請求の範囲】 １　（Ａ）ポリパラヒドロキシスチレンとエポキシ樹脂
とを溶解または加熱反応せし めてなる変性樹脂、および （Ｂ）導電性粉末 を主成分どする変性樹脂組成物を用いて半導体チップと
銀メッキを施さないリードフレームとが接着されている
ことを特徴とする半導体素子。[Scope of Claims] 1. A semiconductor chip manufactured by using (A) a modified resin obtained by dissolving or heat-reacting polyparahydroxystyrene and an epoxy resin, and (B) a modified resin composition containing conductive powder as a main component. A semiconductor element characterized in that a lead frame is bonded to a lead frame that is not silver-plated.
JP59048253A 1984-03-15 1984-03-15 Semiconductor element Granted JPS60193349A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59048253A JPS60193349A (en) 1984-03-15 1984-03-15 Semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59048253A JPS60193349A (en) 1984-03-15 1984-03-15 Semiconductor element

Publications (2)

Publication Number Publication Date
JPS60193349A true JPS60193349A (en) 1985-10-01
JPH0527251B2 JPH0527251B2 (en) 1993-04-20

Family

ID=12798279

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59048253A Granted JPS60193349A (en) 1984-03-15 1984-03-15 Semiconductor element

Country Status (1)

Country Link
JP (1) JPS60193349A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6428928A (en) * 1987-07-24 1989-01-31 Toshiba Chem Corp Semiconductor device
EP0400642A2 (en) * 1989-05-31 1990-12-05 Kao Corporation Electrically conductive paste composition

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6428928A (en) * 1987-07-24 1989-01-31 Toshiba Chem Corp Semiconductor device
EP0400642A2 (en) * 1989-05-31 1990-12-05 Kao Corporation Electrically conductive paste composition
US5156771A (en) * 1989-05-31 1992-10-20 Kao Corporation Electrically conductive paste composition

Also Published As

Publication number Publication date
JPH0527251B2 (en) 1993-04-20

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