JPS6425438A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6425438A JPS6425438A JP18205487A JP18205487A JPS6425438A JP S6425438 A JPS6425438 A JP S6425438A JP 18205487 A JP18205487 A JP 18205487A JP 18205487 A JP18205487 A JP 18205487A JP S6425438 A JPS6425438 A JP S6425438A
- Authority
- JP
- Japan
- Prior art keywords
- opening
- swelled
- semiconductor device
- conductive layers
- drain region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To swell a lower layer base material and to flatten the front surface of a semiconductor device by implanting ions of constituent element of the material into the material itself disposed near the opening of an insulating layer. CONSTITUTION:With a photoresist layer 8 as a mask for an ion implantation an n-type impurity is selectively ion implanted through an opening 9 to a lower layer base material 11, i.e., a source region 6s and a drain region 6d. Then, the material 11 is swelled in the opening 9 to form a swelled part 12, thereby burying the opening 9. Then, the layer 8 is removed, and electrode or wiring conductive layers 10s and 10d are formed on the swelled part 12 equivalent to the extensions from the source region 6s and the drain region 6d of the material filled in the opening 9. The conductive layers 10s and 10d formed in this manner are formed on substantially flat surface.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18205487A JPS6425438A (en) | 1987-07-21 | 1987-07-21 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18205487A JPS6425438A (en) | 1987-07-21 | 1987-07-21 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6425438A true JPS6425438A (en) | 1989-01-27 |
Family
ID=16111534
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18205487A Pending JPS6425438A (en) | 1987-07-21 | 1987-07-21 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6425438A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100233558B1 (en) * | 1996-06-29 | 1999-12-01 | 김영환 | Manufacturing method of a semiconductor device |
-
1987
- 1987-07-21 JP JP18205487A patent/JPS6425438A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100233558B1 (en) * | 1996-06-29 | 1999-12-01 | 김영환 | Manufacturing method of a semiconductor device |
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