JPS5742167A - Production of mos type semiconductor device - Google Patents
Production of mos type semiconductor deviceInfo
- Publication number
- JPS5742167A JPS5742167A JP11761780A JP11761780A JPS5742167A JP S5742167 A JPS5742167 A JP S5742167A JP 11761780 A JP11761780 A JP 11761780A JP 11761780 A JP11761780 A JP 11761780A JP S5742167 A JPS5742167 A JP S5742167A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- implanted
- film
- layers
- sio2
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To obtain an MOS type device higher in the integration level with finer elements and preventing the lowering of a gate breakdown strength and breaking of wires by steps by eliminating overhanging in shape of the gate electrode and irregularities on the surface of the elements due to the electrode. CONSTITUTION:An SiO2 film 2 and a polycrystaline Si layer 3 are laminated on an Si substrate 1 and after they are covered with an SiO2 film 4 to be a gate insulation film, ions are implanted into the layer 3 to be turned to an n<+> type layer. Then, a polycrystaline Si is stacked on the film 4 and turned to a p type layer 5 by a similar ion implantation to control the threshold voltage. A photoresist film 6 as mask is provided on a region intended to form a channel and O2 ion is implanted into the layer 3 not covered with the film 6 to form O2 implanted layers 31. Then, p ions are implanted into the layer 5 to form a p-implanted layer 51. After the layer 6 is removed, the layers 31 are changed to SiO2 layers 32 by heat treatment so that a part 3' of the layer 3 laid between the layers 32 is used for a gate electrode 7. Then, an n<+> type source region 8 and a drain region 9 are formed at both sides of a part 5' of layer 51 by diffusion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11761780A JPS5742167A (en) | 1980-08-26 | 1980-08-26 | Production of mos type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11761780A JPS5742167A (en) | 1980-08-26 | 1980-08-26 | Production of mos type semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5742167A true JPS5742167A (en) | 1982-03-09 |
Family
ID=14716182
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11761780A Pending JPS5742167A (en) | 1980-08-26 | 1980-08-26 | Production of mos type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5742167A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58201364A (en) * | 1982-05-20 | 1983-11-24 | Matsushita Electric Ind Co Ltd | Semiconductor device and manufacture thereof |
| JPH0529347A (en) * | 1990-10-12 | 1993-02-05 | Mitsubishi Electric Corp | Semiconductor device and manufacturing method therefor |
| JPH05211166A (en) * | 1991-12-02 | 1993-08-20 | Nec Corp | Thin film field-effect trasistor |
| US5904911A (en) * | 1997-02-28 | 1999-05-18 | Nec Corporation | Manganese-containing complex oxide, and process for preparing complex perovskite compound composition by use of this complex oxide |
-
1980
- 1980-08-26 JP JP11761780A patent/JPS5742167A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58201364A (en) * | 1982-05-20 | 1983-11-24 | Matsushita Electric Ind Co Ltd | Semiconductor device and manufacture thereof |
| JPH0529347A (en) * | 1990-10-12 | 1993-02-05 | Mitsubishi Electric Corp | Semiconductor device and manufacturing method therefor |
| JPH05211166A (en) * | 1991-12-02 | 1993-08-20 | Nec Corp | Thin film field-effect trasistor |
| US5904911A (en) * | 1997-02-28 | 1999-05-18 | Nec Corporation | Manganese-containing complex oxide, and process for preparing complex perovskite compound composition by use of this complex oxide |
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