JPS6430155A - Device and method for ion implantation for semiconductor device - Google Patents
Device and method for ion implantation for semiconductor deviceInfo
- Publication number
- JPS6430155A JPS6430155A JP62183855A JP18385587A JPS6430155A JP S6430155 A JPS6430155 A JP S6430155A JP 62183855 A JP62183855 A JP 62183855A JP 18385587 A JP18385587 A JP 18385587A JP S6430155 A JPS6430155 A JP S6430155A
- Authority
- JP
- Japan
- Prior art keywords
- insulation mask
- irradiated
- beams
- implanted
- ion implantation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005468 ion implantation Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 238000009413 insulation Methods 0.000 abstract 6
- 238000010884 ion-beam technique Methods 0.000 abstract 3
- 230000015556 catabolic process Effects 0.000 abstract 2
- 239000007943 implant Substances 0.000 abstract 2
- 150000002500 ions Chemical class 0.000 abstract 2
- 230000000149 penetrating effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Abstract
PURPOSE:To prevent dielectric breakdown, by radiating ion beams and charged beams with energy large enough to penetrate into an insulation mask part at the same time on an object to be irradiated and next by making an insulation mask part conductive only at the time of ion implantation so as to implant prescribed ions into the part to be implanted. CONSTITUTION:An object to be irradiated 16 consisting of a part to be implanted 16a and an insulation mask part 16b is irradiated with ion beams 14, and at the same time charged beams 12 with energy according to the insulation mask 16b is radiated on the whole surface of the object to be irradiated 16, so that the insulation mask 16b is made to be conductive by the charged beams 12 and next prescribed ions are made to implant the part to be implanted 16a. Even if the ion beams 14 attain to the insulation mask part 16b, no charge-up phenomenon occurs because of conductivity to some degree, so that charges can be made to flow out in the direction of film thickness as a current penetrating almost vertically into the substrate. Dielectric breakdown can be hence prevented.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62183855A JPH0815065B2 (en) | 1987-07-23 | 1987-07-23 | Ion implanting apparatus for semiconductor device and its implanting method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62183855A JPH0815065B2 (en) | 1987-07-23 | 1987-07-23 | Ion implanting apparatus for semiconductor device and its implanting method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6430155A true JPS6430155A (en) | 1989-02-01 |
| JPH0815065B2 JPH0815065B2 (en) | 1996-02-14 |
Family
ID=16143003
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62183855A Expired - Lifetime JPH0815065B2 (en) | 1987-07-23 | 1987-07-23 | Ion implanting apparatus for semiconductor device and its implanting method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0815065B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03138845A (en) * | 1989-10-25 | 1991-06-13 | Toshiba Corp | Electrification dissolving method for ion implanter |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59204231A (en) * | 1983-05-07 | 1984-11-19 | Fujitsu Ltd | Ion implantation and device therefor |
-
1987
- 1987-07-23 JP JP62183855A patent/JPH0815065B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59204231A (en) * | 1983-05-07 | 1984-11-19 | Fujitsu Ltd | Ion implantation and device therefor |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03138845A (en) * | 1989-10-25 | 1991-06-13 | Toshiba Corp | Electrification dissolving method for ion implanter |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0815065B2 (en) | 1996-02-14 |
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