JPS6423525A - Vertical-type low-pressure vapor growth equipment - Google Patents

Vertical-type low-pressure vapor growth equipment

Info

Publication number
JPS6423525A
JPS6423525A JP17911387A JP17911387A JPS6423525A JP S6423525 A JPS6423525 A JP S6423525A JP 17911387 A JP17911387 A JP 17911387A JP 17911387 A JP17911387 A JP 17911387A JP S6423525 A JPS6423525 A JP S6423525A
Authority
JP
Japan
Prior art keywords
boat
gas
wafers
partition
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17911387A
Other languages
Japanese (ja)
Inventor
Yoji Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TOUYOKO KAGAKU KK
Toyoko Kagaku Co Ltd
Original Assignee
TOUYOKO KAGAKU KK
Toyoko Kagaku Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TOUYOKO KAGAKU KK, Toyoko Kagaku Co Ltd filed Critical TOUYOKO KAGAKU KK
Priority to JP17911387A priority Critical patent/JPS6423525A/en
Publication of JPS6423525A publication Critical patent/JPS6423525A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To form a thin film uniformly on a wafer and to automate a transfer of the wafer by a method wherein a partition is installed between a reaction tube and a boat, only a gas diffused through the partition where a gas introduction hole is made is used for a vapor growth operation and the boat can be turned. CONSTITUTION:A number of silicon wafers 13 are supported horizontally on a boat 14 which is hung inside a reaction tube 11 in such a way that the boat can be turned freely. The inside is heated by using a resistance heating furnace 12; a gas introduced from a gas introduction tube 15 while the wafer boat 14 is turned flows between the reaction tube 11 and a tubular partition 17; one part of the gas is diffused into the inside through introduction holes 18 at the tubular partition 17 and is fed onto the wafers 13. A shape of the holes made at the tubular partition 17 is not restricted especially. However, a size of the holes is to be selected in such a way that the concentration of the gas flowing from an upper part to a lower part of the wafers can be made uniform. By this setup, it is possible to form a uniform thin film on the wafers.
JP17911387A 1987-07-20 1987-07-20 Vertical-type low-pressure vapor growth equipment Pending JPS6423525A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17911387A JPS6423525A (en) 1987-07-20 1987-07-20 Vertical-type low-pressure vapor growth equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17911387A JPS6423525A (en) 1987-07-20 1987-07-20 Vertical-type low-pressure vapor growth equipment

Publications (1)

Publication Number Publication Date
JPS6423525A true JPS6423525A (en) 1989-01-26

Family

ID=16060239

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17911387A Pending JPS6423525A (en) 1987-07-20 1987-07-20 Vertical-type low-pressure vapor growth equipment

Country Status (1)

Country Link
JP (1) JPS6423525A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07326590A (en) * 1995-06-16 1995-12-12 Kokusai Electric Co Ltd Vertical cvd device and its boat

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6252200A (en) * 1985-08-28 1987-03-06 Nec Corp Device for gaseous-phase epitaxial growth

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6252200A (en) * 1985-08-28 1987-03-06 Nec Corp Device for gaseous-phase epitaxial growth

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07326590A (en) * 1995-06-16 1995-12-12 Kokusai Electric Co Ltd Vertical cvd device and its boat

Similar Documents

Publication Publication Date Title
US4108106A (en) Cross-flow reactor
US3517643A (en) Vapor deposition apparatus including diffuser means
US3473510A (en) Method and apparatus for the continuous doping of semiconductor materials
JPS5588323A (en) Manufacture of semiconductor device
US3660179A (en) Gaseous diffusion technique
JPS6423525A (en) Vertical-type low-pressure vapor growth equipment
US3615944A (en) Method for the continuous doping of semiconductor materials
JPS6423524A (en) Method and equipment for vertical-type low-pressure vapor growth
JPS55110030A (en) Method for vapor growth
JPH0997766A (en) Horizontal thermal treatment device
JPS5737824A (en) Method and device for impurity diffusion
JPS6481214A (en) Vapor growth apparatus
JPS61290713A (en) Equipment for treatment
EP0279406A2 (en) Device for forming silicon oxide film
KR920000710B1 (en) Heating treatment apparatus of semiconductor substfrates
JPS55160424A (en) Vapor phase epitaxial device
JPS5726441A (en) Cvd method and device therefor
JPS57194522A (en) Thermal treatment of semiconductor wafer
JPS5470763A (en) Method and apparatus for uniform diffusion
SU830091A1 (en) Vacuum electric furnace for chemicothermic treatment
JPH08107082A (en) Vertical heat treatment apparatus
JPS6439727A (en) Manufacture of semiconductor device
JPS5629337A (en) Formation of silicon nitride film
JPS59213127A (en) Furnace core tube
JPS55110031A (en) Method for vapor growth