JPS6252200A - Device for gaseous-phase epitaxial growth - Google Patents
Device for gaseous-phase epitaxial growthInfo
- Publication number
- JPS6252200A JPS6252200A JP18884485A JP18884485A JPS6252200A JP S6252200 A JPS6252200 A JP S6252200A JP 18884485 A JP18884485 A JP 18884485A JP 18884485 A JP18884485 A JP 18884485A JP S6252200 A JPS6252200 A JP S6252200A
- Authority
- JP
- Japan
- Prior art keywords
- epitaxial growth
- reaction tube
- reaction
- gas
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は気相エピタキシャル成長装置に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a vapor phase epitaxial growth apparatus.
従来、この種のシリコンエピタキシャル成長装置は円筒
形反応管内に基板ホルダーを用い、多数枚のシリコン単
結晶基板を積み重ねる様に設置し、円筒形反応管に設け
られた導入口より ＳｉＬ 、 ５ｉＨ２−Ｃ４ｈ ５
ＩＨＣ１３＋ Ｓ Ｉ Ｃ１１ａ 及びＨ２等の反応
ガスを導入し、シリコン単結晶基板表面にシリコンをエ
ピタキシャル成長させるものとなっていた。この種の７
リコンエビタキシヤル成長装置では、シリコンのエピタ
キシャル成長膜の膜厚、電気抵抗等を各基板内及び基板
間で均一にするため、反応ガスの導入方法に種々の工夫
がなされている。例としては第２図に示すように、多数
の細孔１４を有するガス導入用ノズル１３を、シリコン
単結晶基板１５ヲのせた基板ホルダー１９と円筒形反応
管１２の内壁との間隙に設け、その細孔１４よりシリコ
ン単結晶基板に向かって反応ガスを吹き出す方式の装置
が提案されている（Ｖαｎｄｉｍｉｒ Ｓ、 Ｂａｎ
ａ、ｎｄ Ｅｄｗｃｘｒｄ Ａ、 Ｍｉｌｌｅｒ、 Ｐ
ｒｏ−ｃｅｅｄｉｎｇ ｏｆ ＩｎｔｅｒｎｃＬｔｉｏ
ｎａｌ Ｃｏｎｔｅｒｅｎｃｅ ｏｎ Ｃｈｅｍｉｃｃ
ｌＶＬ：Ｌｐｏｒ Ｄｅｐｏｓｉｔｉｏｎ、 Ｔｈｅ
Ｅｌｅｅｔｒｏｃｈｅｍｉｃａｌ Ｉｎｃ、＋ １９７
９ｐ １０２〜ｐ １２５” Ａ Ｎｅｗ ＲｅＣＬｃ
ｔｏｒ Ｆｏｒ ５ｉｌｉｃｏｎ ＥｐｉｔＣＬｘｙ
″） 。Conventionally, this type of silicon epitaxial growth apparatus uses a substrate holder in a cylindrical reaction tube, and a large number of silicon single crystal substrates are stacked on top of each other.
Reactive gases such as IHC13+ S I C11a and H2 were introduced to grow silicon epitaxially on the surface of a silicon single crystal substrate. 7 of this kind
In the recon epitaxial growth apparatus, in order to make the film thickness, electrical resistance, etc. of the epitaxially grown silicon film uniform within each substrate and between substrates, various methods of introducing reactive gases have been devised. For example, as shown in FIG. 2, a gas introduction nozzle 13 having a large number of pores 14 is provided in the gap between a substrate holder 19 on which a silicon single crystal substrate 15 is placed and the inner wall of a cylindrical reaction tube 12. A device has been proposed in which a reactive gas is blown out from the pores 14 toward the silicon single crystal substrate (Vαndimir S, Ban
a, nd Edwcxrd A, Miller, P
ro-ceeding of InterncLtio
nal Conterence on Chemistry
lVL: Lpor Deposition, The
Eleetrochemical Inc., +197
9p 102~p 125” A New ReCLc
tor For 5ilicon EpitCLxy
″）.
図において１１は架台、１６はガス導入口、１７は排気
口、１８は高周波加熱ヒーターである。In the figure, 11 is a frame, 16 is a gas inlet, 17 is an exhaust port, and 18 is a high frequency heater.
上述した従来のシリコンエビタキノヤル成長装！テハ均
一なシリコンエピタキシャル成長膜を得るために、ノズ
ルの細孔から吹き出す反応ガスをシリコン単結晶基板表
面で均一に分布させる必要があシ、このためにはノズル
細孔の形状、大きさ、数、位置を調整し、かつノズルに
首振り運動をさせる駆動機構を付加する等、構造及び機
構が複雑になるという欠点がある。また、この複雑さが
原因となり、均一な膜厚、電気抵抗等の特性を有するノ
リコンエピタキシャル成長膜を再現性良く成長させるに
は困難が多いという欠点がある。さらに反応ガスを全て
混合した後に高温に保たれた反応管内に導入するため、
気相反応によりシリコン微粒子が発生し、エピタキシャ
ル成長しようとするシリコン単結晶基板を汚染するとい
う欠点がある。The conventional silicone growth device mentioned above! In order to obtain a uniform silicon epitaxially grown film, it is necessary to uniformly distribute the reaction gas blown out from the nozzle pores on the silicon single crystal substrate surface. There is a drawback that the structure and mechanism become complicated, as a drive mechanism is added to adjust the position and swing the nozzle. Moreover, due to this complexity, there is a drawback that it is difficult to grow a Noricon epitaxially grown film with characteristics such as uniform film thickness and electrical resistance with good reproducibility. Furthermore, after all the reaction gases are mixed, they are introduced into the reaction tube kept at high temperature.
There is a drawback that silicon fine particles are generated by the gas phase reaction and contaminate the silicon single crystal substrate on which epitaxial growth is to be performed.
本発明は前記問題点を解消するもので、半導体単結晶基
板表面に均一な分布をもつガス流を供給する気相エピタ
キシャル成長装置を提供するものである。The present invention solves the above problems and provides a vapor phase epitaxial growth apparatus that supplies a gas flow with a uniform distribution to the surface of a semiconductor single crystal substrate.
本発明の気相エピタキシャル成長装置は加熱装置内に設
置された円筒形反応管を外管と、複数のガス導入用細孔
を有する内管との２重管構造としたことを特徴とするも
のである。The vapor phase epitaxial growth apparatus of the present invention is characterized in that the cylindrical reaction tube installed in the heating device has a double tube structure consisting of an outer tube and an inner tube having a plurality of gas introduction pores. be.
次に、本発明の一実施例について図面を参照して説明す
る。Next, an embodiment of the present invention will be described with reference to the drawings.
第１図は本発明の一実施例の縦断面図である。FIG. 1 is a longitudinal sectional view of an embodiment of the present invention.
第１図において、１は反応管外管であり、ガス導入口２
及び３を備えている。４は反応管内管であり、その周壁
には細孔５が複数設けられている。In Fig. 1, 1 is an outer tube of the reaction tube, and a gas inlet 2
and 3. 4 is a reaction tube inner tube, and a plurality of pores 5 are provided in its peripheral wall.
細孔５ば、シリコン単結晶基板６を水平に保持し中心軸
のまわりに回転可能な基板ホルダー７の上端よりやや上
部から基板ホルダー７の下端付近にわたって開孔されて
いる。また、反応管内管４には、排気口８が設けられ、
反応管内管４の内部にはガス導入口９が設けられている
。シリコン単結晶基板６は抵抗加熱装置１０によって加
熱される・なお、反応管外管１１反応管内管２．基板ホ
ルダー７及びガス導入口９は反応管内部が減圧されても
真空気密が保てるように架台１１に固定されている。The pore 5 is opened from slightly above the upper end of the substrate holder 7, which holds the silicon single crystal substrate 6 horizontally and is rotatable around the central axis, to near the lower end of the substrate holder 7. Further, the reaction tube inner tube 4 is provided with an exhaust port 8,
A gas inlet 9 is provided inside the reaction tube inner tube 4 . The silicon single crystal substrate 6 is heated by a resistance heating device 10.The reaction tube outer tube 11 the reaction tube inner tube 2. The substrate holder 7 and the gas inlet 9 are fixed to a pedestal 11 so that vacuum tightness can be maintained even if the inside of the reaction tube is reduced in pressure.
以下に成長実験の一例を示す。An example of a growth experiment is shown below.
基板ホルダー７に直径１５０朋のシリコン単結晶基板を
８朋間隔で５０枚設置し、基板ホルダーを１０ｒｐｍで
回転させる。次に、ガス導入口２，３及び９よりＨ２を
５０１／朋で流しながら反応管内温度を１１００°Ｃと
し、その後ガス導入口２，３よりＳ １Ｈ２Ｃ１２をｏ
、ｓｘ／ｉ、ＨＣＡをｏ、ｓ ｇｍｉｎ 、ガス導入口
９より迅を４ ｌ／Ｔｕ！Ｉ 、 ＰＨ３ｋ Ｏ，０８
１Ｊ／ｍｍを流し、排気口８より真空排気して反応管内
部ｆ ２ｔｏｒｒとして成長した・その結果、５０枚全
てのシリコン単結晶基板におけるエピタキシャル成長膜
の膜厚は±３係、電気抵抗の分布は±５％であった。又
、微粒子欠陥のないエピタキシャル膜であった。本成長
実験では、加熱装置として抵抗加熱ヒーターを用いたが
、高周波加熱、ランプ加熱の方式を用いても良い。また
、ガス導入時に際し、ガス導入口９より５ｉＨ２Ｃ１２
゜ＨＣｌ、ガス導入口２，３よりＨ２、ＰＨ３を導入し
ても同様の結果が得られた。また、反応管外管に設けら
れガス導入口は２ケ所であったが、基板ホルダーが長い
場合、３ケ所以上ガス導入口を設け、反応管内管の細孔
より均一なガス流を放出する必要がある。Fifty silicon single crystal substrates each having a diameter of 150 mm were placed on the substrate holder 7 at intervals of 8 mm, and the substrate holder was rotated at 10 rpm. Next, the temperature inside the reaction tube was set to 1100°C while flowing H2 at a rate of 501/h from gas inlets 2, 3, and 9, and then, S 1H2C12 was introduced through gas inlets 2, 3, and 9.
, sx/i, HCA o, s gmin, 4 l/Tu from gas inlet 9! I, PH3k O, 08
1 J/mm, the reaction tube was evacuated through the exhaust port 8, and the inside of the reaction tube was grown at f 2 torr. As a result, the thickness of the epitaxially grown film on all 50 silicon single crystal substrates was ±3 factors, and the distribution of electrical resistance was It was ±5%. Furthermore, the epitaxial film was free of particulate defects. In this growth experiment, a resistance heater was used as the heating device, but high frequency heating or lamp heating may also be used. Also, when introducing gas, 5iH2C12
Similar results were obtained even when HCl and H2 and PH3 were introduced from the gas inlets 2 and 3. In addition, the outer tube of the reaction tube had two gas inlet ports, but if the substrate holder is long, it is necessary to install three or more gas inlet ports to release a uniform gas flow from the pores of the inner tube of the reaction tube. There is.
以上説明したように本発明は円筒形反応管を、外管と複
数の細孔を有する内管との２重管構造にし、その間隙及
び別途内管に設けたガス導入口を通して異なる原料ガス
を個別に導入することにより、多数枚のシリコン単結晶
基板をある間隔で積み重ね設置する縦型加熱方式を用い
た量産性の高いエピタキシャル成長装置を提供できるも
のであり、シリコンエピタキシャル基板を極めて量産性
良く、安価に作製でき、エピタキシャル基板の応用を著
しく拡大できる効果がある。近年、ＬＳＩの高集積化伴
って、シリコン単結晶の高品質化が強く求められている
が、エピタキシャル基板は通常のバルク基板と比較して
著しく高品質基板であり、従来、バルク基板が用いられ
ていたＭＯＳデバイスにもエピタキシャル基板が用いら
れるようになってきており、本発明の工業的価値は甚大
である。As explained above, the present invention has a cylindrical reaction tube with a double tube structure consisting of an outer tube and an inner tube having a plurality of pores, and different raw material gases are introduced through the gap between the outer tube and the gas inlet separately provided in the inner tube. By introducing these individually, it is possible to provide an epitaxial growth device that uses a vertical heating method in which a large number of silicon single crystal substrates are stacked at certain intervals, and is highly suitable for mass production. It can be manufactured at low cost and has the effect of significantly expanding the applications of epitaxial substrates. In recent years, as LSIs have become more highly integrated, there has been a strong demand for higher quality silicon single crystals, but epitaxial substrates are of significantly higher quality than ordinary bulk substrates, and bulk substrates have traditionally been used. Epitaxial substrates have come to be used even in MOS devices that were previously used, and the industrial value of the present invention is enormous.
第１図は本発明による気相エピタキシャル成長装置の縦
断面図、第２図は従来の気相エビタキンヤル成長装置の
縦断面図である。
１ ・反応管外管 ２・・・ガス導入口３・・ガ
ス導入口 ４・・・反応管内管５・・・細孔
６・・・シリコン単結晶基板７・・・基板
ホルダー ８・・・排気口９・・・ガス導入口
１０・・・抵抗加熱装置１１・・架台
特許出願人 日本電気株式会社
一二とグ゛
第１図FIG. 1 is a longitudinal sectional view of a vapor phase epitaxial growth apparatus according to the present invention, and FIG. 2 is a longitudinal sectional view of a conventional vapor phase epitaxial growth apparatus. 1 ・Reaction tube outer tube 2 ・ Gas inlet 3 ・ Gas inlet 4 ・ Reaction tube inner tube 5 ・ Pore
6...Silicon single crystal substrate 7...Substrate holder 8...Exhaust port 9...Gas inlet
10... Resistance heating device 11... Frame Patent applicant NEC Corporation 12 and 1 Figure 1
Claims (1)
半導体基板を間隔をもたせて積み重ねるように設置する
気相エピタキシャル成長装置において、反応管を外管と
ガス導入用細孔が複数設けられた内管との２重管構造と
したことを特徴とする気相エピタキシャル成長装置。(1) In a vapor phase epitaxial growth device in which multiple semiconductor substrates are stacked at intervals in a reaction tube installed in a vertical heating device, the reaction tube has an outer tube and multiple gas introduction pores. A vapor phase epitaxial growth apparatus characterized by having a double tube structure with an inner tube provided.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18884485A JPS6252200A (en) | 1985-08-28 | 1985-08-28 | Device for gaseous-phase epitaxial growth |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18884485A JPS6252200A (en) | 1985-08-28 | 1985-08-28 | Device for gaseous-phase epitaxial growth |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6252200A true JPS6252200A (en) | 1987-03-06 |
Family
ID=16230828
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18884485A Pending JPS6252200A (en) | 1985-08-28 | 1985-08-28 | Device for gaseous-phase epitaxial growth |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6252200A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63183266U (en) * | 1987-05-18 | 1988-11-25 | ||
| JPS6423525A (en) * | 1987-07-20 | 1989-01-26 | Toyoko Kagaku Kk | Vertical-type low-pressure vapor growth equipment |
| JPH01119017A (en) * | 1987-10-31 | 1989-05-11 | Tokyo Electron Ltd | Manufacture of silicon single crystal |
| EP0385382A2 (en) * | 1989-02-27 | 1990-09-05 | Heinrich Dr. Söhlbrand | Process and apparatus for the thermal treatment of semiconducting materials |
| CN104178806A (en) * | 2014-08-20 | 2014-12-03 | 中国科学院半导体研究所 | Suspended double-side epitaxial growth device |
-
1985
- 1985-08-28 JP JP18884485A patent/JPS6252200A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63183266U (en) * | 1987-05-18 | 1988-11-25 | ||
| JPS6423525A (en) * | 1987-07-20 | 1989-01-26 | Toyoko Kagaku Kk | Vertical-type low-pressure vapor growth equipment |
| JPH01119017A (en) * | 1987-10-31 | 1989-05-11 | Tokyo Electron Ltd | Manufacture of silicon single crystal |
| EP0385382A2 (en) * | 1989-02-27 | 1990-09-05 | Heinrich Dr. Söhlbrand | Process and apparatus for the thermal treatment of semiconducting materials |
| EP0385382A3 (en) * | 1989-02-27 | 1991-08-28 | Heinrich Dr. Söhlbrand | Process and apparatus for the thermal treatment of semiconducting materials |
| CN104178806A (en) * | 2014-08-20 | 2014-12-03 | 中国科学院半导体研究所 | Suspended double-side epitaxial growth device |
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