JPS55160424A - Vapor phase epitaxial device - Google Patents

Vapor phase epitaxial device

Info

Publication number
JPS55160424A
JPS55160424A JP6687279A JP6687279A JPS55160424A JP S55160424 A JPS55160424 A JP S55160424A JP 6687279 A JP6687279 A JP 6687279A JP 6687279 A JP6687279 A JP 6687279A JP S55160424 A JPS55160424 A JP S55160424A
Authority
JP
Japan
Prior art keywords
container
dopant
supporting plate
vapor phase
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6687279A
Other languages
Japanese (ja)
Inventor
Junji Komeno
Tanji Okawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6687279A priority Critical patent/JPS55160424A/en
Publication of JPS55160424A publication Critical patent/JPS55160424A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To keep the uniformity of vapor temperatute when dopant are put in a container and a carrier gas is made to flow through the container to produce the dopant gas and is sent to the vapor phase epitaxial device by a method wherein plural partition plates having penetrating holes are prepared in the container leaving spaces between them and keeping each hole position as not to come on the same projection line. CONSTITUTION:The dopant gas to be sent in the vapor phase epitaxial device containing a semiconductor substrate is produced as follows. The container 11 to contain the dopant 14 is made to be a longitudinal cylindrical form, etc., and a supporting plate 23 to put the dopant 14 on it having good ventilation, and plural quartz partition plates 20-22 to be located under the supporting plate, are arranged in the container. The carrier gas send-in pipe 12 is inserted into the container 11 from the upper end to the bottom, and a send-out pipe 13 of the dopant gas produced in the container is fitted to the container wall locating over the supporting plate 23. In this constitution, plural numbers of holes 20a-22a are so prepared on each partition plate 20-22 as not to come in the same position on a common projection face, and the heated carrier gas is made to contact with the dopant 14 being fully stirred and kept in an uniform temperature.
JP6687279A 1979-05-31 1979-05-31 Vapor phase epitaxial device Pending JPS55160424A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6687279A JPS55160424A (en) 1979-05-31 1979-05-31 Vapor phase epitaxial device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6687279A JPS55160424A (en) 1979-05-31 1979-05-31 Vapor phase epitaxial device

Publications (1)

Publication Number Publication Date
JPS55160424A true JPS55160424A (en) 1980-12-13

Family

ID=13328381

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6687279A Pending JPS55160424A (en) 1979-05-31 1979-05-31 Vapor phase epitaxial device

Country Status (1)

Country Link
JP (1) JPS55160424A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7828274B2 (en) 2002-07-23 2010-11-09 Advanced Technology Materials, Inc. Method and apparatus to help promote contact of gas with vaporized material
US10385452B2 (en) 2012-05-31 2019-08-20 Entegris, Inc. Source reagent-based delivery of fluid with high material flux for batch deposition
US10895010B2 (en) 2006-08-31 2021-01-19 Entegris, Inc. Solid precursor-based delivery of fluid utilizing controlled solids morphology

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7828274B2 (en) 2002-07-23 2010-11-09 Advanced Technology Materials, Inc. Method and apparatus to help promote contact of gas with vaporized material
SG167665A1 (en) * 2002-07-23 2011-01-28 Advanced Tech Materials Vaporizer delivery ampoule
US9004462B2 (en) 2002-07-23 2015-04-14 Entegris, Inc. Method and apparatus to help promote contact of gas with vaporized material
US9469898B2 (en) 2002-07-23 2016-10-18 Entegris, Inc. Method and apparatus to help promote contact of gas with vaporized material
US10465286B2 (en) 2002-07-23 2019-11-05 Entegris, Inc. Method and apparatus to help promote contact of gas with vaporized material
US10895010B2 (en) 2006-08-31 2021-01-19 Entegris, Inc. Solid precursor-based delivery of fluid utilizing controlled solids morphology
US10385452B2 (en) 2012-05-31 2019-08-20 Entegris, Inc. Source reagent-based delivery of fluid with high material flux for batch deposition

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