JPS642050A - Pattern forming method - Google Patents

Pattern forming method

Info

Publication number
JPS642050A
JPS642050A JP15820487A JP15820487A JPS642050A JP S642050 A JPS642050 A JP S642050A JP 15820487 A JP15820487 A JP 15820487A JP 15820487 A JP15820487 A JP 15820487A JP S642050 A JPS642050 A JP S642050A
Authority
JP
Japan
Prior art keywords
illuminating
resist
rays
alkali
parts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15820487A
Other languages
Japanese (ja)
Other versions
JPH012050A (en
Inventor
Yoshiyuki Tani
Masataka Endo
Kazufumi Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP15820487A priority Critical patent/JPS642050A/en
Publication of JPH012050A publication Critical patent/JPH012050A/en
Publication of JPS642050A publication Critical patent/JPS642050A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/7045—Hybrid exposures, i.e. multiple exposures of the same area using different types of exposure apparatus, e.g. combining projection, proximity, direct write, interferometric, UV, x-ray or particle beam
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To enable only light exposed parts to be developed without reducing the film thickness of unexposed parts by selectively illuminating a resist film with far ultraviolet rays and uniformly illuminating the whole surface with X-rays before or after said first illumination. CONSTITUTION:A pattern forming material 2 contains an organic polymer small in light absorption near a wavelength of 249nm, such as formula I, and a photoreactive reagent, such as formula II. The resist pattern 2a is obtained by coating a base plate 1 twice with said material 2 to form the resist film, illuminating it through a mask pattern with 249nm KrF excimer laser beams 3 to convert the reagent in the illuminated parts into an alkali-soluble type, then, uniformly illuminating the whole surface with X rays or doing so before the laser illumination to cross-link the resist, and finally developing it with alkali.
JP15820487A 1987-06-25 1987-06-25 Pattern forming method Pending JPS642050A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15820487A JPS642050A (en) 1987-06-25 1987-06-25 Pattern forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15820487A JPS642050A (en) 1987-06-25 1987-06-25 Pattern forming method

Publications (2)

Publication Number Publication Date
JPH012050A JPH012050A (en) 1989-01-06
JPS642050A true JPS642050A (en) 1989-01-06

Family

ID=15666557

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15820487A Pending JPS642050A (en) 1987-06-25 1987-06-25 Pattern forming method

Country Status (1)

Country Link
JP (1) JPS642050A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07164495A (en) * 1993-12-17 1995-06-27 Nec Corp Injection molding process for plastic molded article
EP1035436A1 (en) * 1999-03-08 2000-09-13 JSR Corporation Resist pattern formation method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07164495A (en) * 1993-12-17 1995-06-27 Nec Corp Injection molding process for plastic molded article
EP1035436A1 (en) * 1999-03-08 2000-09-13 JSR Corporation Resist pattern formation method

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