JPS5629369A - Insulated gate type field effect transistor - Google Patents

Insulated gate type field effect transistor

Info

Publication number
JPS5629369A
JPS5629369A JP10459679A JP10459679A JPS5629369A JP S5629369 A JPS5629369 A JP S5629369A JP 10459679 A JP10459679 A JP 10459679A JP 10459679 A JP10459679 A JP 10459679A JP S5629369 A JPS5629369 A JP S5629369A
Authority
JP
Japan
Prior art keywords
regions
insulating layer
region
thickness
thick
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10459679A
Other languages
Japanese (ja)
Inventor
Kenji Miura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP10459679A priority Critical patent/JPS5629369A/en
Publication of JPS5629369A publication Critical patent/JPS5629369A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To obtain the excellent current controlling characteristics by providing the thickness of the insulating layer constituting the IGFET so that the thickness of the portion under the source and drain regions is thick and that of the portion under the channel between said regions is thin. CONSTITUTION:The insulating layer 22 is deposited on a semiconductor substrate 21, and a semiconductor layer 26 comprising a source region 23, a drain region 24, and a channel region 25 which is provided between said two regions is formed on the insulating layer 22. In this case, the thickness of the layer 22 is not uniform. The thickness of the portions under the regions 23 and 24 is D2 which is thick; and the thickness under the region 25 is D1 which is thin. Thereafter, a thin gate insulating layer 27 is deposited on the regions 25, 23, and 24, a gate electrode 28 is provided thereon and covered by an insulating layer 31, a hole is perforated, and a gate wiring 29 is attached. Then, the regions 23 and 24 are covered, and surrounded by a thick insulating layer 30. Then, a window is provided, and electrode wiring layers 32 and 33 are formed on the regions 23 and 24, respectively. In this constitution, the effect of the electric field to the region 25 from the regions 23 and 24 is reduced, and the current controlling characteristics of the region 25 become excellent.
JP10459679A 1979-08-17 1979-08-17 Insulated gate type field effect transistor Pending JPS5629369A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10459679A JPS5629369A (en) 1979-08-17 1979-08-17 Insulated gate type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10459679A JPS5629369A (en) 1979-08-17 1979-08-17 Insulated gate type field effect transistor

Publications (1)

Publication Number Publication Date
JPS5629369A true JPS5629369A (en) 1981-03-24

Family

ID=14384800

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10459679A Pending JPS5629369A (en) 1979-08-17 1979-08-17 Insulated gate type field effect transistor

Country Status (1)

Country Link
JP (1) JPS5629369A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5196912A (en) * 1988-10-28 1993-03-23 Casio Computer Co., Ltd. Thin film transistor having memory function and method for using thin film transistor as memory element
EP0810652A2 (en) * 1992-01-28 1997-12-03 Canon Kabushiki Kaisha Semiconductor device and manufacture method of same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52113684A (en) * 1976-03-19 1977-09-22 Matsushita Electric Ind Co Ltd Semiconductor device
JPS52122484A (en) * 1976-04-07 1977-10-14 Hitachi Ltd Field effect type polisilicon resistance element

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52113684A (en) * 1976-03-19 1977-09-22 Matsushita Electric Ind Co Ltd Semiconductor device
JPS52122484A (en) * 1976-04-07 1977-10-14 Hitachi Ltd Field effect type polisilicon resistance element

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5196912A (en) * 1988-10-28 1993-03-23 Casio Computer Co., Ltd. Thin film transistor having memory function and method for using thin film transistor as memory element
EP0810652A2 (en) * 1992-01-28 1997-12-03 Canon Kabushiki Kaisha Semiconductor device and manufacture method of same
EP0810652A3 (en) * 1992-01-28 1998-05-20 Canon Kabushiki Kaisha Semiconductor device and manufacture method of same

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