JPS54152485A - Electrode forming method for gallium phosphide light- emitting diode - Google Patents
Electrode forming method for gallium phosphide light- emitting diodeInfo
- Publication number
- JPS54152485A JPS54152485A JP6057578A JP6057578A JPS54152485A JP S54152485 A JPS54152485 A JP S54152485A JP 6057578 A JP6057578 A JP 6057578A JP 6057578 A JP6057578 A JP 6057578A JP S54152485 A JPS54152485 A JP S54152485A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electrode
- emitting diode
- gap layer
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Led Devices (AREA)
Abstract
PURPOSE: To obtain a stable electrode with good reproducibility without failing to crystallize a Gap layer, by adding a thin group V element to the surface of the GaP layer when forming the electrode on the GaP layer constituting a light-emitting diode.
CONSTITUTION: On N-type GaP substrate 11, P-type GaP layer 12 is formed by liquid-crystal epitaxial growth to constitute a red light emitting diode, and group V element ions such as As are injected into its surface to form thin As element injection region 14. In this way, several empty lattice points are made here, an electrode composed of Au-Be alloy 12a and Au layer 12b is fitted in this area, and an electrode of Au-si alloy layer 11a and Au layer 11b is adhered to the reverse surface of substrate 11. Then, a heat treatment is carried out in an Ar atmosphere of 500°C for about twenty minutes and the layer-11b side is mounted on header 15. Consequently, the light-emission efficiency increases by approximately 10% in comparison with an ordinary diode and the contact resistance of the electrodes decreases down to 5× 10-5Ωcm to the contrary.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6057578A JPS54152485A (en) | 1978-05-23 | 1978-05-23 | Electrode forming method for gallium phosphide light- emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6057578A JPS54152485A (en) | 1978-05-23 | 1978-05-23 | Electrode forming method for gallium phosphide light- emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS54152485A true JPS54152485A (en) | 1979-11-30 |
Family
ID=13146179
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6057578A Pending JPS54152485A (en) | 1978-05-23 | 1978-05-23 | Electrode forming method for gallium phosphide light- emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54152485A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6352490A (en) * | 1986-08-22 | 1988-03-05 | Toshiba Corp | Glass-sealed light-emitting semiconductor device |
| US5909051A (en) * | 1995-06-05 | 1999-06-01 | Hewlett-Packard Company | Minority carrier semiconductor devices with improved stability |
| EP1039516A1 (en) * | 1999-03-25 | 2000-09-27 | Sumitomo Electric Industries, Ltd. | Ohmic electrode, method of manufacturing the same and semiconductor device |
-
1978
- 1978-05-23 JP JP6057578A patent/JPS54152485A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6352490A (en) * | 1986-08-22 | 1988-03-05 | Toshiba Corp | Glass-sealed light-emitting semiconductor device |
| US5909051A (en) * | 1995-06-05 | 1999-06-01 | Hewlett-Packard Company | Minority carrier semiconductor devices with improved stability |
| EP1039516A1 (en) * | 1999-03-25 | 2000-09-27 | Sumitomo Electric Industries, Ltd. | Ohmic electrode, method of manufacturing the same and semiconductor device |
| US6365969B1 (en) | 1999-03-25 | 2002-04-02 | Sumitomo Electric Industries, Ltd. | Ohmic electrode, method of manufacturing the same and semiconductor device |
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