JP2004363635A - Light-emitting diode - Google Patents

Light-emitting diode Download PDF

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JP2004363635A
JP2004363635A JP2004280288A JP2004280288A JP2004363635A JP 2004363635 A JP2004363635 A JP 2004363635A JP 2004280288 A JP2004280288 A JP 2004280288A JP 2004280288 A JP2004280288 A JP 2004280288A JP 2004363635 A JP2004363635 A JP 2004363635A
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light
emitting element
wavelength
emitting diode
gallium nitride
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JP3724498B2 (en
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Yoshiaki Tadatsu
芳昭 多田津
Shuji Nakamura
修二 中村
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Nichia Chemical Industries Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body

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Abstract

<P>PROBLEM TO BE SOLVED: To enhance the visibility of a light-emitting diode having a light-emitting element made of a gallium nitride based compound semiconductor material and to improve the luminance of the light-emitting diode. <P>SOLUTION: The light-emitting diode comprises a metal stem, a metal post, a light-emitting element arranged on the metal stem and a resin mold that surrounds the entirety of the light-emitting element, wherein the resin mold is doped with a fluorescent dye or fluorescent pigment that, when excited by light emitted from the light-emitting element, emits the fluorescence of a wavelength different from an excitation wavelength. The fluorescent dye or the fluorescent pigment emits visible light of a wavelength longer than the excitation wavelength when excited by visible light coming from the light-emitting element. The light-emitting element is provided with a gallium nitride based compound semiconductor made of stacked n- and p-type layers that emit visible light. The light-emitting element composed of the gallium nitride based compound semiconductor has an electrode connected to the metal post through a gold line by means of wire bonding. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は発光素子を樹脂モールドで包囲してなる発光ダイオード（以下ＬＥＤという）に係り、特に一種類の発光素子で多種類の発光ができ、さらに高輝度な波長変換発光ダイオードに関する。   The present invention relates to a light emitting diode (hereinafter, referred to as an LED) in which a light emitting element is surrounded by a resin mold, and more particularly to a wavelength conversion light emitting diode capable of emitting various kinds of light with one kind of light emitting element and having high luminance.

一般に、ＬＥＤは図１に示すような構造を有している。１は１ｍｍ角以下に切断された例えばＧａＡｌＡｓ、ＧａＰ等よりなる発光素子、２はメタルステム、３はメタルポスト、４は発光素子を包囲する樹脂モールドである。発光素子１の裏面電極はメタルステム２に銀ペースト等で接着され電気的に接続されており、発光素子１の表面電極は他端子であるメタルポスト３から伸ばされた金線によりその表面でワイヤボンドされ、さらに発光素子１は透明な樹脂モールド４でモールドされている。   Generally, an LED has a structure as shown in FIG. Reference numeral 1 denotes a light emitting element made of, for example, GaAlAs, GaP, or the like, which is cut into a 1 mm square or less, 2 denotes a metal stem, 3 denotes a metal post, and 4 denotes a resin mold surrounding the light emitting element. The back electrode of the light emitting element 1 is electrically connected to a metal stem 2 by bonding with a silver paste or the like, and the front electrode of the light emitting element 1 is connected to a metal wire extending from a metal post 3 which is another terminal on the surface thereof. Bonded, and the light emitting element 1 is molded with a transparent resin mold 4.

通常、樹脂モールド４は、発光素子の発光を空気中に効率よく放出する目的で、屈折率が高く、かつ透明度の高い樹脂が選択されるが、他に、その発光素子の発光色を変換する目的で、あるいは色を補正する目的で、その樹脂モールド４の中に着色剤として無機顔料、または有機顔料が混入される場合がある。例えば、ＧａＰの半導体材料を有する緑色発光素子の樹脂モールド中に、赤色顔料を添加すれば発光色は白色とすることができる。   Usually, the resin mold 4 is selected from a resin having a high refractive index and a high transparency in order to efficiently emit light emitted from the light emitting element into the air. In addition, the resin mold 4 converts the light emitting color of the light emitting element. In some cases, an inorganic pigment or an organic pigment is mixed as a colorant into the resin mold 4 for the purpose or for correcting the color. For example, if a red pigment is added to a resin mold of a green light emitting device having a GaP semiconductor material, the emission color can be white.

しかしながら、従来、樹脂モールドに着色剤を添加して波長を変換するという技術はほとんど実用化されておらず、着色剤により色補正する技術がわずかに使われているのみである。なぜなら、樹脂モールドに、波長を変換できるほどの非発光物質である着色剤を添加すると、ＬＥＤそのもの自体の輝度が大きく低下してしまうからである。   However, conventionally, a technique of adding a coloring agent to a resin mold to convert a wavelength has not been practically used, and a technique of correcting a color by using a coloring agent has been used only slightly. This is because the addition of a coloring agent, which is a non-light emitting substance that can convert the wavelength, to the resin mold greatly reduces the brightness of the LED itself.

ところで、現在、ＬＥＤとして実用化されているのは、赤外、赤、黄色、緑色発光のＬＥＤであり、青色または紫外のＬＥＤは未だ実用化されていない。青色、紫外発光の発光素子はII-VI族のＺｎＳｅ、IV-IV族のＳｉＣ、III-V族のＧａＮ等の半導体材料を用いて研究が進められ、最近、その中でも一般式がＧａXＡｌ1-XＮ（但しXは０≦X≦１である。）で表される窒化ガリウム系化合物半導体が、常温で、比較的優れた発光を示すことが発表され注目されている。また、窒化ガリウム系化合物半導体を用いて、初めてｐｎ接合を実現したＬＥＤが発表されている（応用物理，６０巻，２号，ｐ１６３〜ｐ１６６，１９９１）。それによるとｐｎ接合の窒化ガリウム系化合物半導体を有するＬＥＤの発光波長は、主として４３０ｎｍ付近にあり、さらに３７０ｎｍ付近の紫外域にも発光ピークを有している。その波長は上記半導体材料の中で最も短い波長である。しかし、そのＬＥＤは発光波長が示すように紫色に近い発光色を有しているため視感度が悪いという欠点がある。   By the way, currently, LEDs that emit infrared light, red light, yellow light, and green light are practically used as LEDs, and blue or ultraviolet LEDs are not yet practically used. Research into light-emitting elements emitting blue and ultraviolet light has been advanced using semiconductor materials such as II-VI group ZnSe, IV-IV group SiC, and III-V group GaN, and recently, among them, the general formula is GaXAl1-XN. A gallium nitride-based compound semiconductor represented by the formula (where X is 0 ≦ X ≦ 1) exhibits relatively excellent light emission at room temperature and has been noticed. Further, an LED that realizes a pn junction for the first time using a gallium nitride-based compound semiconductor has been announced (Applied Physics, Vol. 60, No. 2, p163-p166, 1991). According to this, the emission wavelength of an LED having a pn junction gallium nitride-based compound semiconductor is mainly around 430 nm, and also has an emission peak in the ultraviolet region around 370 nm. The wavelength is the shortest wavelength among the semiconductor materials. However, the LED has an emission color close to purple as indicated by the emission wavelength, and thus has a disadvantage that visibility is poor.

本発明はこのような事情を鑑みなされたもので、その目的とするところは、発光ピークが４３０ｎｍ付近、および３７０ｎｍ付近にある窒化ガリウム系化合物半導体材料よりなる発光素子を有するＬＥＤの視感度を良くし、またその輝度を向上させることにある。   The present invention has been made in view of such circumstances, and an object of the present invention is to improve the visibility of an LED having a light-emitting element made of a gallium nitride-based compound semiconductor material having an emission peak near 430 nm and about 370 nm. And to improve the luminance.

本発明は、ｎ型及びｐ型に積層された窒化ガリウム系化合物半導体である発光素子からの光を変換する蛍光染料又は蛍光顔料が添加された波長変換発光ダイオード用樹脂において、
前記波長変換発光ダイオード用樹脂は、前記発光素子が配設されている凹状部分内に配置しており、前記波長変換発光ダイオード用樹脂中の蛍光染料又は蛍光顔料は、発光素子からの青色の可視光により励起されて、励起波長よりも長波長の可視光を出して発光ダイオードの視感度を良くして成ることを特徴とする蛍光染料又は蛍光顔料が添加された波長変換発光ダイオード用樹脂である。 The present invention provides a wavelength conversion light emitting diode resin to which a fluorescent dye or a fluorescent pigment for converting light from a light emitting element that is a gallium nitride-based compound semiconductor stacked on an n-type and a p-type is added.
The wavelength-converting light-emitting diode resin is disposed in a concave portion where the light-emitting element is provided, and the fluorescent dye or the fluorescent pigment in the wavelength-converting light-emitting diode resin emits blue visible light from the light-emitting element. A wavelength-converting light-emitting diode resin to which a fluorescent dye or a fluorescent pigment is added, which is excited by light and emits visible light having a wavelength longer than the excitation wavelength to improve the visibility of the light-emitting diode. .

蛍光染料、蛍光顔料は、一般に短波長の光によって励起され、励起波長よりも長波長光を発光する。逆に長波長の光によって励起されて短波長の光を発光する蛍光顔料もあるが、それはエネルギー効率が非常に悪く微弱にしか発光しない。前記したように窒化ガリウム系化合物半導体はＬＥＤに使用される半導体材料中で最も短波長側にその発光ピークを有するものであり、しかも紫外域にも発光ピークを有している。そのためそれを発光素子の材料として使用した場合、その発光素子を包囲する樹脂モールドに蛍光染料、蛍光顔料を添加することにより、最も好適にそれら蛍光物質を励起することができる。したがって青色ＬＥＤの色補正はいうにおよばず、蛍光染料、蛍光顔料の種類によって数々の波長の光を変換することができる。さらに、短波長の光を長波長に変え、エネルギー効率がよい為、添加する蛍光染料、蛍光顔料が微量で済み、輝度の低下の点からも非常に好都合である。   Fluorescent dyes and fluorescent pigments are generally excited by light having a short wavelength, and emit light having a wavelength longer than the excitation wavelength. Conversely, some fluorescent pigments emit short-wavelength light when excited by long-wavelength light, but they have very poor energy efficiency and emit only weakly. As described above, a gallium nitride-based compound semiconductor has an emission peak on the shortest wavelength side among semiconductor materials used for an LED, and also has an emission peak in an ultraviolet region. Therefore, when it is used as a material of a light emitting element, the fluorescent substance can be most preferably excited by adding a fluorescent dye or a fluorescent pigment to a resin mold surrounding the light emitting element. Therefore, it goes without saying that it is possible to convert light of various wavelengths depending on the type of fluorescent dye or fluorescent pigment, not to mention color correction of the blue LED. Further, since short-wavelength light is converted into long-wavelength light and energy efficiency is high, only a small amount of fluorescent dye or fluorescent pigment needs to be added, which is very advantageous from the viewpoint of lowering luminance.

図２は本発明のＬＥＤの構造を示す一実施例である。１１はサファイア基板の上にＧａＡｌＮがｎ型およびｐ型に積層されてなる青色発光素子、２および３は図１と同じくメタルステム、メタルポスト、４は発光素子を包囲する樹脂モールドである。発光素子１１の裏面はサファイアの絶縁基板であり裏面から電極を取り出せないため、ＧａＡｌＮ層のｎ電極をメタルステム２と電気的に接続するため、ＧａＡｌＮ層をエッチングしてｎ型層の表面を露出させてオーミック電極を付け、金線によって電気的に接続する手法が取られている。また他の電極は図１と同様にメタルポスト３から伸ばした金線によりｐ型層の表面でワイヤボンドされている。さらに樹脂モールド４には４２０〜４４０ｎｍ付近の波長によって励起されて４８０ｎｍに発光ピークを有する波長を発光する蛍光染料５が添加されている。   FIG. 2 is an embodiment showing the structure of the LED of the present invention. Reference numeral 11 denotes a blue light-emitting element in which GaAlN is laminated on a sapphire substrate in n-type and p-type. Reference numerals 2 and 3 denote metal stems and metal posts as in FIG. 1, and reference numeral 4 denotes a resin mold surrounding the light-emitting element. Since the back surface of the light emitting element 11 is an insulating substrate of sapphire and electrodes cannot be taken out from the back surface, the GaAlN layer is etched to expose the surface of the n-type layer to electrically connect the n electrode of the GaAlN layer to the metal stem 2. Then, a method of attaching an ohmic electrode and electrically connecting it with a gold wire has been adopted. The other electrodes are wire-bonded on the surface of the p-type layer by gold wires extending from the metal posts 3 as in FIG. Further, a fluorescent dye 5 which emits at a wavelength having an emission peak at 480 nm when excited by a wavelength around 420 to 440 nm is added to the resin mold 4.

従来の一ＬＥＤの構造を示す模式断面図。FIG. 4 is a schematic cross-sectional view showing the structure of a conventional LED. 本発明のＬＥＤの一実施例の構造を示す模式断面図。FIG. 2 is a schematic cross-sectional view showing the structure of an embodiment of the LED of the present invention.

符号の説明Explanation of reference numerals

１１・・・発光素子
２・・・メタルステム
３・・・メタルポスト
４・・・樹脂モールド
５・・・蛍光染料 11 light emitting element 2 metal stem 3 metal post 4 resin mold 5 fluorescent dye

Claims (1)

メタルステムと、メタルポストと、メタルステム上の発光素子と、この発光素子全体を包囲する樹脂モールド中に発光素子からの光により励起されて、励起波長と異なる波長の蛍光を出す蛍光染料又は蛍光顔料が添加された発光ダイオードにおいて、
前記蛍光染料又は蛍光顔料は、前記発光素子からの可視光により励起されて、励起波長よりも長波長の可視光を出すと共に、前記発光素子は、可視光を発光するｎ型およびｐ型に積層されてなる窒化ガリウム系化合物半導体を備え、この窒化ガリウム系化合物半導体からなる発光素子は、電極をメタルポストと金線によりワイヤボンドして接続していることを特徴とする発光ダイオード。
A metal stem, a metal post, a light emitting element on the metal stem, and a fluorescent dye or fluorescent light that is excited by light from the light emitting element in a resin mold surrounding the entire light emitting element and emits fluorescence having a wavelength different from the excitation wavelength. In a light-emitting diode to which a pigment is added,
The fluorescent dye or the fluorescent pigment is excited by visible light from the light emitting element, emits visible light having a wavelength longer than the excitation wavelength, and the light emitting element is stacked in n-type and p-type, which emit visible light. A light-emitting diode comprising a gallium nitride-based compound semiconductor formed as described above, and a light-emitting element comprising the gallium nitride-based compound semiconductor, wherein electrodes are connected by wire bonding to metal posts and gold wires.
JP2004280288A 2004-09-27 2004-09-27 Light emitting diode Expired - Lifetime JP3724498B2 (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006060254A (en) * 2005-10-31 2006-03-02 Nichia Chem Ind Ltd Light emitting diode
US8389975B2 (en) 2007-09-27 2013-03-05 Showa Denko K.K. Group III nitride semiconductor light-emitting device
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