JP2004363635A - Light-emitting diode - Google Patents
Light-emitting diode Download PDFInfo
- Publication number
- JP2004363635A JP2004363635A JP2004280288A JP2004280288A JP2004363635A JP 2004363635 A JP2004363635 A JP 2004363635A JP 2004280288 A JP2004280288 A JP 2004280288A JP 2004280288 A JP2004280288 A JP 2004280288A JP 2004363635 A JP2004363635 A JP 2004363635A
- Authority
- JP
- Japan
- Prior art keywords
- light
- emitting element
- wavelength
- emitting diode
- gallium nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
Landscapes
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
Description
本発明は発光素子を樹脂モールドで包囲してなる発光ダイオード(以下LEDという)に係り、特に一種類の発光素子で多種類の発光ができ、さらに高輝度な波長変換発光ダイオードに関する。 The present invention relates to a light emitting diode (hereinafter, referred to as an LED) in which a light emitting element is surrounded by a resin mold, and more particularly to a wavelength conversion light emitting diode capable of emitting various kinds of light with one kind of light emitting element and having high luminance.
一般に、LEDは図1に示すような構造を有している。1は1mm角以下に切断された例えばGaAlAs、GaP等よりなる発光素子、2はメタルステム、3はメタルポスト、4は発光素子を包囲する樹脂モールドである。発光素子1の裏面電極はメタルステム2に銀ペースト等で接着され電気的に接続されており、発光素子1の表面電極は他端子であるメタルポスト3から伸ばされた金線によりその表面でワイヤボンドされ、さらに発光素子1は透明な樹脂モールド4でモールドされている。
Generally, an LED has a structure as shown in FIG.
通常、樹脂モールド4は、発光素子の発光を空気中に効率よく放出する目的で、屈折率が高く、かつ透明度の高い樹脂が選択されるが、他に、その発光素子の発光色を変換する目的で、あるいは色を補正する目的で、その樹脂モールド4の中に着色剤として無機顔料、または有機顔料が混入される場合がある。例えば、GaPの半導体材料を有する緑色発光素子の樹脂モールド中に、赤色顔料を添加すれば発光色は白色とすることができる。
Usually, the
しかしながら、従来、樹脂モールドに着色剤を添加して波長を変換するという技術はほとんど実用化されておらず、着色剤により色補正する技術がわずかに使われているのみである。なぜなら、樹脂モールドに、波長を変換できるほどの非発光物質である着色剤を添加すると、LEDそのもの自体の輝度が大きく低下してしまうからである。 However, conventionally, a technique of adding a coloring agent to a resin mold to convert a wavelength has not been practically used, and a technique of correcting a color by using a coloring agent has been used only slightly. This is because the addition of a coloring agent, which is a non-light emitting substance that can convert the wavelength, to the resin mold greatly reduces the brightness of the LED itself.
ところで、現在、LEDとして実用化されているのは、赤外、赤、黄色、緑色発光のLEDであり、青色または紫外のLEDは未だ実用化されていない。青色、紫外発光の発光素子はII-VI族のZnSe、IV-IV族のSiC、III-V族のGaN等の半導体材料を用いて研究が進められ、最近、その中でも一般式がGaXAl1-XN(但しXは0≦X≦1である。)で表される窒化ガリウム系化合物半導体が、常温で、比較的優れた発光を示すことが発表され注目されている。また、窒化ガリウム系化合物半導体を用いて、初めてpn接合を実現したLEDが発表されている(応用物理,60巻,2号,p163〜p166,1991)。それによるとpn接合の窒化ガリウム系化合物半導体を有するLEDの発光波長は、主として430nm付近にあり、さらに370nm付近の紫外域にも発光ピークを有している。その波長は上記半導体材料の中で最も短い波長である。しかし、そのLEDは発光波長が示すように紫色に近い発光色を有しているため視感度が悪いという欠点がある。 By the way, currently, LEDs that emit infrared light, red light, yellow light, and green light are practically used as LEDs, and blue or ultraviolet LEDs are not yet practically used. Research into light-emitting elements emitting blue and ultraviolet light has been advanced using semiconductor materials such as II-VI group ZnSe, IV-IV group SiC, and III-V group GaN, and recently, among them, the general formula is GaXAl1-XN. A gallium nitride-based compound semiconductor represented by the formula (where X is 0 ≦ X ≦ 1) exhibits relatively excellent light emission at room temperature and has been noticed. Further, an LED that realizes a pn junction for the first time using a gallium nitride-based compound semiconductor has been announced (Applied Physics, Vol. 60, No. 2, p163-p166, 1991). According to this, the emission wavelength of an LED having a pn junction gallium nitride-based compound semiconductor is mainly around 430 nm, and also has an emission peak in the ultraviolet region around 370 nm. The wavelength is the shortest wavelength among the semiconductor materials. However, the LED has an emission color close to purple as indicated by the emission wavelength, and thus has a disadvantage that visibility is poor.
本発明はこのような事情を鑑みなされたもので、その目的とするところは、発光ピークが430nm付近、および370nm付近にある窒化ガリウム系化合物半導体材料よりなる発光素子を有するLEDの視感度を良くし、またその輝度を向上させることにある。 The present invention has been made in view of such circumstances, and an object of the present invention is to improve the visibility of an LED having a light-emitting element made of a gallium nitride-based compound semiconductor material having an emission peak near 430 nm and about 370 nm. And to improve the luminance.
本発明は、n型及びp型に積層された窒化ガリウム系化合物半導体である発光素子からの光を変換する蛍光染料又は蛍光顔料が添加された波長変換発光ダイオード用樹脂において、
前記波長変換発光ダイオード用樹脂は、前記発光素子が配設されている凹状部分内に配置しており、前記波長変換発光ダイオード用樹脂中の蛍光染料又は蛍光顔料は、発光素子からの青色の可視光により励起されて、励起波長よりも長波長の可視光を出して発光ダイオードの視感度を良くして成ることを特徴とする蛍光染料又は蛍光顔料が添加された波長変換発光ダイオード用樹脂である。
The present invention provides a wavelength conversion light emitting diode resin to which a fluorescent dye or a fluorescent pigment for converting light from a light emitting element that is a gallium nitride-based compound semiconductor stacked on an n-type and a p-type is added.
The wavelength-converting light-emitting diode resin is disposed in a concave portion where the light-emitting element is provided, and the fluorescent dye or the fluorescent pigment in the wavelength-converting light-emitting diode resin emits blue visible light from the light-emitting element. A wavelength-converting light-emitting diode resin to which a fluorescent dye or a fluorescent pigment is added, which is excited by light and emits visible light having a wavelength longer than the excitation wavelength to improve the visibility of the light-emitting diode. .
蛍光染料、蛍光顔料は、一般に短波長の光によって励起され、励起波長よりも長波長光を発光する。逆に長波長の光によって励起されて短波長の光を発光する蛍光顔料もあるが、それはエネルギー効率が非常に悪く微弱にしか発光しない。前記したように窒化ガリウム系化合物半導体はLEDに使用される半導体材料中で最も短波長側にその発光ピークを有するものであり、しかも紫外域にも発光ピークを有している。そのためそれを発光素子の材料として使用した場合、その発光素子を包囲する樹脂モールドに蛍光染料、蛍光顔料を添加することにより、最も好適にそれら蛍光物質を励起することができる。したがって青色LEDの色補正はいうにおよばず、蛍光染料、蛍光顔料の種類によって数々の波長の光を変換することができる。さらに、短波長の光を長波長に変え、エネルギー効率がよい為、添加する蛍光染料、蛍光顔料が微量で済み、輝度の低下の点からも非常に好都合である。 Fluorescent dyes and fluorescent pigments are generally excited by light having a short wavelength, and emit light having a wavelength longer than the excitation wavelength. Conversely, some fluorescent pigments emit short-wavelength light when excited by long-wavelength light, but they have very poor energy efficiency and emit only weakly. As described above, a gallium nitride-based compound semiconductor has an emission peak on the shortest wavelength side among semiconductor materials used for an LED, and also has an emission peak in an ultraviolet region. Therefore, when it is used as a material of a light emitting element, the fluorescent substance can be most preferably excited by adding a fluorescent dye or a fluorescent pigment to a resin mold surrounding the light emitting element. Therefore, it goes without saying that it is possible to convert light of various wavelengths depending on the type of fluorescent dye or fluorescent pigment, not to mention color correction of the blue LED. Further, since short-wavelength light is converted into long-wavelength light and energy efficiency is high, only a small amount of fluorescent dye or fluorescent pigment needs to be added, which is very advantageous from the viewpoint of lowering luminance.
図2は本発明のLEDの構造を示す一実施例である。11はサファイア基板の上にGaAlNがn型およびp型に積層されてなる青色発光素子、2および3は図1と同じくメタルステム、メタルポスト、4は発光素子を包囲する樹脂モールドである。発光素子11の裏面はサファイアの絶縁基板であり裏面から電極を取り出せないため、GaAlN層のn電極をメタルステム2と電気的に接続するため、GaAlN層をエッチングしてn型層の表面を露出させてオーミック電極を付け、金線によって電気的に接続する手法が取られている。また他の電極は図1と同様にメタルポスト3から伸ばした金線によりp型層の表面でワイヤボンドされている。さらに樹脂モールド4には420〜440nm付近の波長によって励起されて480nmに発光ピークを有する波長を発光する蛍光染料5が添加されている。
FIG. 2 is an embodiment showing the structure of the LED of the present invention.
11・・・発光素子
2・・・メタルステム
3・・・メタルポスト
4・・・樹脂モールド
5・・・蛍光染料
11
Claims (1)
前記蛍光染料又は蛍光顔料は、前記発光素子からの可視光により励起されて、励起波長よりも長波長の可視光を出すと共に、前記発光素子は、可視光を発光するn型およびp型に積層されてなる窒化ガリウム系化合物半導体を備え、この窒化ガリウム系化合物半導体からなる発光素子は、電極をメタルポストと金線によりワイヤボンドして接続していることを特徴とする発光ダイオード。
A metal stem, a metal post, a light emitting element on the metal stem, and a fluorescent dye or fluorescent light that is excited by light from the light emitting element in a resin mold surrounding the entire light emitting element and emits fluorescence having a wavelength different from the excitation wavelength. In a light-emitting diode to which a pigment is added,
The fluorescent dye or the fluorescent pigment is excited by visible light from the light emitting element, emits visible light having a wavelength longer than the excitation wavelength, and the light emitting element is stacked in n-type and p-type, which emit visible light. A light-emitting diode comprising a gallium nitride-based compound semiconductor formed as described above, and a light-emitting element comprising the gallium nitride-based compound semiconductor, wherein electrodes are connected by wire bonding to metal posts and gold wires.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004280288A JP3724498B2 (en) | 2004-09-27 | 2004-09-27 | Light emitting diode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004280288A JP3724498B2 (en) | 2004-09-27 | 2004-09-27 | Light emitting diode |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003067318A Division JP2003234513A (en) | 2003-02-04 | 2003-02-04 | Resin for wavelength conversion light-emitting diode allowing fluorescent dye or fluorescent pigment to be added |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005158166A Division JP3808892B2 (en) | 2005-05-30 | 2005-05-30 | Light emitting diode |
JP2005158167A Division JP3920296B2 (en) | 2005-05-30 | 2005-05-30 | Light emitting diode |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2004363635A true JP2004363635A (en) | 2004-12-24 |
JP3724498B2 JP3724498B2 (en) | 2005-12-07 |
Family
ID=34056604
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004280288A Expired - Lifetime JP3724498B2 (en) | 2004-09-27 | 2004-09-27 | Light emitting diode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3724498B2 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006060254A (en) * | 2005-10-31 | 2006-03-02 | Nichia Chem Ind Ltd | Light emitting diode |
US8389975B2 (en) | 2007-09-27 | 2013-03-05 | Showa Denko K.K. | Group III nitride semiconductor light-emitting device |
US8545718B2 (en) | 2009-03-31 | 2013-10-01 | Jx Nippon Oil & Energy Corporation | Wholly aromatic thermotropic liquid-crystal polyester resin composition, molded object, and LED reflector |
US9219014B2 (en) | 2011-05-24 | 2015-12-22 | Panasonic Intellectual Property Management Co., Ltd. | Manufacturing method of light emitting elements, and manufacturing apparatus of light emitting elements |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6600175B1 (en) | 1996-03-26 | 2003-07-29 | Advanced Technology Materials, Inc. | Solid state white light emitter and display using same |
US7972030B2 (en) | 2007-03-05 | 2011-07-05 | Intematix Corporation | Light emitting diode (LED) based lighting systems |
US7868340B2 (en) | 2008-05-30 | 2011-01-11 | Bridgelux, Inc. | Method and apparatus for generating white light from solid state light emitting devices |
US9004705B2 (en) | 2011-04-13 | 2015-04-14 | Intematix Corporation | LED-based light sources for light emitting devices and lighting arrangements with photoluminescence wavelength conversion |
US20140185269A1 (en) | 2012-12-28 | 2014-07-03 | Intermatix Corporation | Solid-state lamps utilizing photoluminescence wavelength conversion components |
WO2016154214A1 (en) | 2015-03-23 | 2016-09-29 | Intematix Corporation | Photoluminescence color display |
Citations (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5079379U (en) * | 1973-11-24 | 1975-07-09 | ||
JPS5270783A (en) * | 1975-12-10 | 1977-06-13 | Toshiba Corp | Semiconductor luminescent unit |
JPS5482988A (en) * | 1977-12-15 | 1979-07-02 | Toshiba Corp | Luminous display unit |
JPS5441660Y1 (en) * | 1970-02-18 | 1979-12-05 | ||
JPS57186376A (en) * | 1981-05-04 | 1982-11-16 | Licentia Gmbh | Light emitting semiconductor element |
JPS62147366U (en) * | 1986-03-11 | 1987-09-17 | ||
JPS63180A (en) * | 1986-06-19 | 1988-01-05 | Seiko Epson Corp | Blue light-emitting element and manufacture thereof |
JPS6413161A (en) * | 1987-07-07 | 1989-01-18 | Canon Kk | Printer |
JPS6417484A (en) * | 1987-07-13 | 1989-01-20 | Nippon Telegraph & Telephone | Semiconductor light emitting element |
JPH03152897A (en) * | 1989-11-09 | 1991-06-28 | Idemitsu Kosan Co Ltd | Electroluminescence element |
JPH0367462U (en) * | 1989-10-31 | 1991-07-01 | ||
JPH0381652U (en) * | 1989-12-08 | 1991-08-21 | ||
JPH03203388A (en) * | 1989-12-29 | 1991-09-05 | Matsushita Electric Ind Co Ltd | Semiconductor light emitting element and its manufacture |
JPH04109297A (en) * | 1990-08-30 | 1992-04-10 | Tanaka Kikinzoku Kogyo Kk | Production of pipe for flute |
JPH05152609A (en) * | 1991-11-25 | 1993-06-18 | Nichia Chem Ind Ltd | Light emitting diode |
JP2003234513A (en) * | 2003-02-04 | 2003-08-22 | Nichia Chem Ind Ltd | Resin for wavelength conversion light-emitting diode allowing fluorescent dye or fluorescent pigment to be added |
-
2004
- 2004-09-27 JP JP2004280288A patent/JP3724498B2/en not_active Expired - Lifetime
Patent Citations (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5441660Y1 (en) * | 1970-02-18 | 1979-12-05 | ||
JPS5079379U (en) * | 1973-11-24 | 1975-07-09 | ||
JPS5270783A (en) * | 1975-12-10 | 1977-06-13 | Toshiba Corp | Semiconductor luminescent unit |
JPS5482988A (en) * | 1977-12-15 | 1979-07-02 | Toshiba Corp | Luminous display unit |
JPS57186376A (en) * | 1981-05-04 | 1982-11-16 | Licentia Gmbh | Light emitting semiconductor element |
JPS62147366U (en) * | 1986-03-11 | 1987-09-17 | ||
JPS63180A (en) * | 1986-06-19 | 1988-01-05 | Seiko Epson Corp | Blue light-emitting element and manufacture thereof |
JPS6413161A (en) * | 1987-07-07 | 1989-01-18 | Canon Kk | Printer |
JPS6417484A (en) * | 1987-07-13 | 1989-01-20 | Nippon Telegraph & Telephone | Semiconductor light emitting element |
JPH0367462U (en) * | 1989-10-31 | 1991-07-01 | ||
JPH03152897A (en) * | 1989-11-09 | 1991-06-28 | Idemitsu Kosan Co Ltd | Electroluminescence element |
JPH0381652U (en) * | 1989-12-08 | 1991-08-21 | ||
JPH03203388A (en) * | 1989-12-29 | 1991-09-05 | Matsushita Electric Ind Co Ltd | Semiconductor light emitting element and its manufacture |
JPH04109297A (en) * | 1990-08-30 | 1992-04-10 | Tanaka Kikinzoku Kogyo Kk | Production of pipe for flute |
JPH05152609A (en) * | 1991-11-25 | 1993-06-18 | Nichia Chem Ind Ltd | Light emitting diode |
JP2003234513A (en) * | 2003-02-04 | 2003-08-22 | Nichia Chem Ind Ltd | Resin for wavelength conversion light-emitting diode allowing fluorescent dye or fluorescent pigment to be added |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006060254A (en) * | 2005-10-31 | 2006-03-02 | Nichia Chem Ind Ltd | Light emitting diode |
US8389975B2 (en) | 2007-09-27 | 2013-03-05 | Showa Denko K.K. | Group III nitride semiconductor light-emitting device |
US8545718B2 (en) | 2009-03-31 | 2013-10-01 | Jx Nippon Oil & Energy Corporation | Wholly aromatic thermotropic liquid-crystal polyester resin composition, molded object, and LED reflector |
US9219014B2 (en) | 2011-05-24 | 2015-12-22 | Panasonic Intellectual Property Management Co., Ltd. | Manufacturing method of light emitting elements, and manufacturing apparatus of light emitting elements |
Also Published As
Publication number | Publication date |
---|---|
JP3724498B2 (en) | 2005-12-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2900928B2 (en) | Light emitting diode | |
JPH05152609A (en) | Light emitting diode | |
US7414271B2 (en) | Thin film led | |
JP4663513B2 (en) | White light emitting device and manufacturing method thereof | |
JP4101468B2 (en) | Method for manufacturing light emitting device | |
JP3366586B2 (en) | Light emitting diode | |
JP4932078B2 (en) | Light emitting device and manufacturing method thereof | |
JP3645207B2 (en) | Light emitting diode | |
JP2000022221A (en) | Light emitting diode | |
JP2014053609A (en) | Light-emitting element and method of manufacturing the same | |
JP3724498B2 (en) | Light emitting diode | |
JP2003234513A (en) | Resin for wavelength conversion light-emitting diode allowing fluorescent dye or fluorescent pigment to be added | |
JP3724490B2 (en) | Light emitting diode | |
CN203607398U (en) | A highly color rendering white light LED structure | |
JP3808892B2 (en) | Light emitting diode | |
JP3920296B2 (en) | Light emitting diode | |
JP2008041807A (en) | White light source | |
JP4109297B2 (en) | Light emitting diode | |
JP3995011B2 (en) | Light emitting diode | |
JP2000150960A (en) | Neutral tints led | |
JP2004158874A (en) | Light emitting diode | |
JP2007184655A (en) | Light emitting diode | |
JP2003124530A (en) | Light emitting diode and led display device using the same | |
KR20040020240A (en) | Light Emitting Diode Lamp and method for fabricating thereof | |
JP3674387B2 (en) | Light emitting diode and method for forming the same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20041026 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20050329 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20050530 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20050830 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20050912 |
|
R150 | Certificate of patent (=grant) or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080930 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090930 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090930 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090930 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100930 Year of fee payment: 5 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100930 Year of fee payment: 5 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110930 Year of fee payment: 6 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110930 Year of fee payment: 6 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110930 Year of fee payment: 6 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120930 Year of fee payment: 7 |
|
EXPY | Cancellation because of completion of term | ||
FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120930 Year of fee payment: 7 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120930 Year of fee payment: 7 |