JPH01104029U - - Google Patents
Info
- Publication number
- JPH01104029U JPH01104029U JP1987197262U JP19726287U JPH01104029U JP H01104029 U JPH01104029 U JP H01104029U JP 1987197262 U JP1987197262 U JP 1987197262U JP 19726287 U JP19726287 U JP 19726287U JP H01104029 U JPH01104029 U JP H01104029U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- pad
- silicon substrate
- gap
- utility
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/023—Redistribution layers [RDL] for bonding areas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05554—Shape in top view being square
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05556—Shape in side view
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Wire Bonding (AREA)
Description
第1図は本考案に係る半導体装置の第1の実施
例を示す図、第2図は本考案に係る半導体装置の
第2の実施例を示す図、第3図は本考案に係る半
導体装置の第3の実施例を示す図、第4図は従来
の半導体装置を示す図である。
1……シリコン基板、10,20,30……パ
ツド、11,21,31……金属膜、12,22
,32……空隙部。
FIG. 1 is a diagram showing a first embodiment of a semiconductor device according to the present invention, FIG. 2 is a diagram showing a second embodiment of a semiconductor device according to the present invention, and FIG. 3 is a diagram showing a semiconductor device according to the present invention. FIG. 4 is a diagram showing a conventional semiconductor device. 1... Silicon substrate, 10, 20, 30... Pad, 11, 21, 31... Metal film, 12, 22
, 32...Void portion.
Claims (1)
を電気的に接続するパツドに空隙を形成したこと
を特徴とする半導体装置。 A semiconductor device characterized in that a gap is formed in a pad that electrically connects a circuit group formed on a silicon substrate and an external circuit.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1987197262U JPH01104029U (en) | 1987-12-28 | 1987-12-28 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1987197262U JPH01104029U (en) | 1987-12-28 | 1987-12-28 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH01104029U true JPH01104029U (en) | 1989-07-13 |
Family
ID=31487825
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1987197262U Pending JPH01104029U (en) | 1987-12-28 | 1987-12-28 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01104029U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010225654A (en) * | 2009-03-19 | 2010-10-07 | Toyota Central R&D Labs Inc | Semiconductor device |
-
1987
- 1987-12-28 JP JP1987197262U patent/JPH01104029U/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010225654A (en) * | 2009-03-19 | 2010-10-07 | Toyota Central R&D Labs Inc | Semiconductor device |
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